Transistor - FET, MOSFET - Susunan

STS9D8NH3LL

bahagian bahagian: 104832

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, 9A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

STS4C3F60L

bahagian bahagian: 2668

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, 3A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

STC6NF30V

bahagian bahagian: 2911

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA,

NTLJD3181PZTAG

bahagian bahagian: 2807

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

FDY4000CZ

bahagian bahagian: 130404

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 600mA, 350mA, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FDG6318P

bahagian bahagian: 123017

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, Rds On (Maks) @ Id, Vgs: 780 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

ECH8667-TL-HX

bahagian bahagian: 2888

EFC4618R-P-TR

bahagian bahagian: 2908

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive,

ECH8653-S-TL-H

bahagian bahagian: 2924

MCH6603-TL-H

bahagian bahagian: 2889

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 1.5V Drive, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 140mA, Rds On (Maks) @ Id, Vgs: 23 Ohm @ 40mA, 4V,

FDMS9620S

bahagian bahagian: 127765

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, 10A, Rds On (Maks) @ Id, Vgs: 21.5 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

EMH2417R-TL-H

bahagian bahagian: 156902

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

FDW2511NZ

bahagian bahagian: 2697

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.1A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 7.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

NDS9947

bahagian bahagian: 2668

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

TPCP8401(TE85L,F)

bahagian bahagian: 3345

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, 5.5A, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.1V @ 100µA,

GWM220-004P3-SL

bahagian bahagian: 2796

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A, Vgs (th) (Maks) @ Id: 4V @ 1mA,

SI6933DQ-T1-E3

bahagian bahagian: 2879

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

SI4310BDY-T1-E3

bahagian bahagian: 2851

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, 9.8A, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI6544BDQ-T1-GE3

bahagian bahagian: 2882

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A, 3.8A, Rds On (Maks) @ Id, Vgs: 43 mOhm @ 3.8A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI4965DY-T1-E3

bahagian bahagian: 2893

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

SI4941EDY-T1-E3

bahagian bahagian: 2795

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 8.3A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 250µA,

SI7904DN-T1-GE3

bahagian bahagian: 2820

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 7.7A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 935µA,

SI4942DY-T1-GE3

bahagian bahagian: 2829

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 7.4A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SI4622DY-T1-E3

bahagian bahagian: 2830

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 9.6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

SI5915BDC-T1-E3

bahagian bahagian: 2830

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

IRF9953TR

bahagian bahagian: 2719

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.3A, Rds On (Maks) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

IRF7313PBF

bahagian bahagian: 69767

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

IRF5850TR

bahagian bahagian: 2705

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.2A, Rds On (Maks) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

IRF7752GTRPBF

bahagian bahagian: 2826

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4.6A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

IRF7503TRPBF

bahagian bahagian: 185602

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A, Rds On (Maks) @ Id, Vgs: 135 mOhm @ 1.7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

IRF7756

bahagian bahagian: 2661

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.3A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V, Vgs (th) (Maks) @ Id: 900mV @ 250µA,

DMN5L06VA-7

bahagian bahagian: 2754

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

DMN5L06DW-7

bahagian bahagian: 3271

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

PMWD15UN,518

bahagian bahagian: 2710

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11.6A, Rds On (Maks) @ Id, Vgs: 18.5 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 700mV @ 1mA,

XP0487800L

bahagian bahagian: 3315

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 1µA,

UP0487800L

bahagian bahagian: 2703

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 1µA,