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Diod - Pembetulan - Bujang

1N6392
Microsemi Corporation

1N6392

bahagian bahagian: 1292

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 54A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 820mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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1N5418
Microsemi Corporation

1N5418

bahagian bahagian: 7362

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 9A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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1N5614US
Microsemi Corporation

1N5614US

bahagian bahagian: 8563

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1C5711.T
SMC Diode Solutions

1C5711.T

bahagian bahagian: 89998

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 15mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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1N3214
GeneSiC Semiconductor

1N3214

bahagian bahagian: 12725

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 15A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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1N3891
GeneSiC Semiconductor

1N3891

bahagian bahagian: 11106

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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1N4585GP-E3/54
Vishay Semiconductor Diodes Division

1N4585GP-E3/54

bahagian bahagian: 109973

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N5060GP-E3/73
Vishay Semiconductor Diodes Division

1N5060GP-E3/73

bahagian bahagian: 193106

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N5621GP-E3/73
Vishay Semiconductor Diodes Division

1N5621GP-E3/73

bahagian bahagian: 169835

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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1N5395GP-E3/54
Vishay Semiconductor Diodes Division

1N5395GP-E3/54

bahagian bahagian: 105051

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N5617GP-E3/54
Vishay Semiconductor Diodes Division

1N5617GP-E3/54

bahagian bahagian: 133635

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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1N5399GP-E3/54
Vishay Semiconductor Diodes Division

1N5399GP-E3/54

bahagian bahagian: 155838

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N5397GP-E3/73
Vishay Semiconductor Diodes Division

1N5397GP-E3/73

bahagian bahagian: 100734

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N5615GP-E3/73
Vishay Semiconductor Diodes Division

1N5615GP-E3/73

bahagian bahagian: 460

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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1N5059GP-E3/54
Vishay Semiconductor Diodes Division

1N5059GP-E3/54

bahagian bahagian: 191661

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N5398GP-E3/54
Vishay Semiconductor Diodes Division

1N5398GP-E3/54

bahagian bahagian: 182525

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N5619GP-E3/54
Vishay Semiconductor Diodes Division

1N5619GP-E3/54

bahagian bahagian: 141238

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

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1N5062GP-E3/73
Vishay Semiconductor Diodes Division

1N5062GP-E3/73

bahagian bahagian: 122193

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N5393GP-E3/73
Vishay Semiconductor Diodes Division

1N5393GP-E3/73

bahagian bahagian: 175064

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N5623GP-E3/54
Vishay Semiconductor Diodes Division

1N5623GP-E3/54

bahagian bahagian: 178798

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 500ns,

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1N4384GP-E3/54
Vishay Semiconductor Diodes Division

1N4384GP-E3/54

bahagian bahagian: 135645

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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1N5399GP-E3/73
Vishay Semiconductor Diodes Division

1N5399GP-E3/73

bahagian bahagian: 198817

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N5060GP-E3/54
Vishay Semiconductor Diodes Division

1N5060GP-E3/54

bahagian bahagian: 167326

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N5393GP-E3/54
Vishay Semiconductor Diodes Division

1N5393GP-E3/54

bahagian bahagian: 190625

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N5615GP-E3/54
Vishay Semiconductor Diodes Division

1N5615GP-E3/54

bahagian bahagian: 179836

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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1N5061GP-E3/54
Vishay Semiconductor Diodes Division

1N5061GP-E3/54

bahagian bahagian: 199837

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N4383GP-E3/54
Vishay Semiconductor Diodes Division

1N4383GP-E3/54

bahagian bahagian: 107301

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N4586GP-E3/73
Vishay Semiconductor Diodes Division

1N4586GP-E3/73

bahagian bahagian: 170139

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N5617GP-E3/73
Vishay Semiconductor Diodes Division

1N5617GP-E3/73

bahagian bahagian: 169713

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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1N4384GP-E3/73
Vishay Semiconductor Diodes Division

1N4384GP-E3/73

bahagian bahagian: 197188

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N4385GP-E3/54
Vishay Semiconductor Diodes Division

1N4385GP-E3/54

bahagian bahagian: 124025

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N5619GP-E3/73
Vishay Semiconductor Diodes Division

1N5619GP-E3/73

bahagian bahagian: 173289

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

Bersenang-senang
1N5062GP-E3/54
Vishay Semiconductor Diodes Division

1N5062GP-E3/54

bahagian bahagian: 145128

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N5397GP-E3/54
Vishay Semiconductor Diodes Division

1N5397GP-E3/54

bahagian bahagian: 132665

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N5621GP-E3/54
Vishay Semiconductor Diodes Division

1N5621GP-E3/54

bahagian bahagian: 182712

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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1N5391GP-E3/54
Vishay Semiconductor Diodes Division

1N5391GP-E3/54

bahagian bahagian: 126752

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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