Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Diod - Pembetulan - Bujang

1N4586GP-E3/54
Vishay Semiconductor Diodes Division

1N4586GP-E3/54

bahagian bahagian: 168864

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N4595R
GeneSiC Semiconductor

1N4595R

bahagian bahagian: 2917

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Bersenang-senang
1N6098
GeneSiC Semiconductor

1N6098

bahagian bahagian: 4336

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Bersenang-senang
1N3889
GeneSiC Semiconductor

1N3889

bahagian bahagian: 12061

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

Bersenang-senang
1N3893R
GeneSiC Semiconductor

1N3893R

bahagian bahagian: 9557

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 12A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

Bersenang-senang
1N1188R
GeneSiC Semiconductor

1N1188R

bahagian bahagian: 14337

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 35A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 35A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Bersenang-senang
1N2131AR
GeneSiC Semiconductor

1N2131AR

bahagian bahagian: 7092

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Bersenang-senang
1N1200A
GeneSiC Semiconductor

1N1200A

bahagian bahagian: 15967

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 12A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 12A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Bersenang-senang
1N1190AR
GeneSiC Semiconductor

1N1190AR

bahagian bahagian: 10679

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 40A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Bersenang-senang
1N1190A
GeneSiC Semiconductor

1N1190A

bahagian bahagian: 11089

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 40A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 40A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Bersenang-senang
1N2138AR
GeneSiC Semiconductor

1N2138AR

bahagian bahagian: 7743

Jenis Diod: Standard, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 60A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Bersenang-senang
1N5553US
Microsemi Corporation

1N5553US

bahagian bahagian: 5530

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 9A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N4150-1
Microsemi Corporation

1N4150-1

bahagian bahagian: 35775

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 200mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 4ns,

Bersenang-senang
1N5553
Microsemi Corporation

1N5553

bahagian bahagian: 6439

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 9A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N6640US
Microsemi Corporation

1N6640US

bahagian bahagian: 6262

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 300mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4ns,

Bersenang-senang
1N6622
Microsemi Corporation

1N6622

bahagian bahagian: 5407

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1.2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 45ns,

Bersenang-senang
1N5804US
Microsemi Corporation

1N5804US

bahagian bahagian: 6351

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 875mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

Bersenang-senang
1N5552
Microsemi Corporation

1N5552

bahagian bahagian: 6290

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 9A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N6080
Microsemi Corporation

1N6080

bahagian bahagian: 1677

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 37.7A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

Bersenang-senang
1N3595US
Microsemi Corporation

1N3595US

bahagian bahagian: 5411

Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io): 4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 200mA, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

Bersenang-senang
1N5616US
Microsemi Corporation

1N5616US

bahagian bahagian: 8604

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N3611
Microsemi Corporation

1N3611

bahagian bahagian: 7627

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Bersenang-senang
1N5619US
Microsemi Corporation

1N5619US

bahagian bahagian: 6582

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

Bersenang-senang
1N914UR
Microsemi Corporation

1N914UR

bahagian bahagian: 24811

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 75V, Semasa - Rata-rata Disahkan (Io): 200mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 50mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 20ns,

Bersenang-senang
1N5619
Microsemi Corporation

1N5619

bahagian bahagian: 9843

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

Bersenang-senang
1N5416US
Microsemi Corporation

1N5416US

bahagian bahagian: 5319

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 9A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

Bersenang-senang
1N5807
Microsemi Corporation

1N5807

bahagian bahagian: 6580

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 875mV @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

Bersenang-senang
1N5554
Microsemi Corporation

1N5554

bahagian bahagian: 6400

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 9A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N5711-1
Microsemi Corporation

1N5711-1

bahagian bahagian: 7979

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 70V, Semasa - Rata-rata Disahkan (Io): 33mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 15mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

Bersenang-senang
1N5620
Microsemi Corporation

1N5620

bahagian bahagian: 10754

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N5550
Microsemi Corporation

1N5550

bahagian bahagian: 7965

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 9A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

Bersenang-senang
1N5822US
Microsemi Corporation

1N5822US

bahagian bahagian: 643

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Bersenang-senang
1C5819.T
SMC Diode Solutions

1C5819.T

bahagian bahagian: 90011

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Bersenang-senang
1C5822.T
SMC Diode Solutions

1C5822.T

bahagian bahagian: 90043

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 9.4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Bersenang-senang
1N3647
Semtech Corporation

1N3647

bahagian bahagian: 7939

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 3000V, Semasa - Rata-rata Disahkan (Io): 600mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 5V @ 250mA, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

Bersenang-senang
1N5819HW-13
Diodes Incorporated

1N5819HW-13

bahagian bahagian: 2626

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Bersenang-senang