Dioda - Penyearah - Susunan

Rumah
Dioda - Penyearah - Susunan

GeneSiC Semiconductor

MUR10040CT

bahagian bahagian: 1546

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRTA20080(A)D

bahagian bahagian: 1282

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR30020CT

bahagian bahagian: 1400

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT200200

bahagian bahagian: 1629

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR20005CTR

bahagian bahagian: 1240

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR600200CT

bahagian bahagian: 992

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR20035CT

bahagian bahagian: 1575

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT60045R

bahagian bahagian: 962

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 600A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT20045

bahagian bahagian: 1428

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRT100160(A)D

bahagian bahagian: 1940

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT12020R

bahagian bahagian: 1833

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X160A100

bahagian bahagian: 2757

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 160A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 160A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST120200

bahagian bahagian: 1639

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MSRTA300120(A)D

GeneSiC Semiconductor

MSRTA300120(A)D

bahagian bahagian: 1322

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 300A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR10005CT

bahagian bahagian: 1579

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR20020CT

bahagian bahagian: 1243

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRT200160(A)D

bahagian bahagian: 1391

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR2X100A06

bahagian bahagian: 3294

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR200100CT

bahagian bahagian: 1490

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR12020CTR

bahagian bahagian: 1553

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR30030CT

bahagian bahagian: 1489

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR2X100A10

bahagian bahagian: 3311

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.35V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT12045

bahagian bahagian: 1864

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST16045

bahagian bahagian: 1496

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 160A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 160A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT500150R

bahagian bahagian: 1121

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 250A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR120200CTR

bahagian bahagian: 1494

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR12020CT

bahagian bahagian: 1559

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRTA30080(A)D

bahagian bahagian: 1203

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 300A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR20080CT

bahagian bahagian: 1491

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan

GeneSiC Semiconductor

MBR60080CTR

bahagian bahagian: 823

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X100A150

bahagian bahagian: 3067

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT20060R

bahagian bahagian: 1259

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRT150140(A)D

bahagian bahagian: 1854

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR120100CTR

bahagian bahagian: 1583

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRT15080(A)D

bahagian bahagian: 1929

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA30060

bahagian bahagian: 946

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

Senarai harapan

894

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