Dioda - Penyearah - Susunan | Produk Semikonduktor Diskrit | 25

MURTA20040

bahagian bahagian: 958

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA30040

bahagian bahagian: 977

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X050A120

bahagian bahagian: 3912

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT30045

bahagian bahagian: 1259

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR60040CT

bahagian bahagian: 792

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST10035

bahagian bahagian: 1520

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA200120R

bahagian bahagian: 942

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.6V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA300120

bahagian bahagian: 1023

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.6V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR500100CT

bahagian bahagian: 1147

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 500A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT200150R

bahagian bahagian: 1663

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT30020R

bahagian bahagian: 1097

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT40080

bahagian bahagian: 1313

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA20060R

bahagian bahagian: 1006

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR120150CTR

bahagian bahagian: 1494

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR50035CT

bahagian bahagian: 1122

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 500A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT40020R

bahagian bahagian: 1057

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT500200R

bahagian bahagian: 1085

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 250A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRT15060(A)D

bahagian bahagian: 1915

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR300200CTR

bahagian bahagian: 1431

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT12060

bahagian bahagian: 1889

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT40035R

bahagian bahagian: 1140

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT20020R

bahagian bahagian: 1216

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT40060

bahagian bahagian: 1318

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA600120R

bahagian bahagian: 883

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.6V @ 300A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR50040CTR

bahagian bahagian: 1166

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 500A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X080A060

bahagian bahagian: 4118

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 80A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 80A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST10060

bahagian bahagian: 1587

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR300100CT

bahagian bahagian: 1480

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT12020

bahagian bahagian: 1845

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT60060R

bahagian bahagian: 901

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 600A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR10010CTR

bahagian bahagian: 1598

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X100A045

bahagian bahagian: 3224

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA600120

bahagian bahagian: 921

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.6V @ 300A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X060A060

bahagian bahagian: 4141

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST10030

bahagian bahagian: 1544

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT40040

bahagian bahagian: 1158

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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