Diod - Pembetulan - Bujang

GP2D006A065A

bahagian bahagian: 25677

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GP2D015A120B

bahagian bahagian: 7457

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 15A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 15A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GP2D020A120B

bahagian bahagian: 5743

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 20A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 20A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GDP06S060D

bahagian bahagian: 2250

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GP2D030A120B

bahagian bahagian: 4983

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 30A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 30A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GP2D050A060B

bahagian bahagian: 3568

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 50A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 50A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GDP12S060D

bahagian bahagian: 16299

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 12A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 12A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GP2D020A170B

bahagian bahagian: 2736

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1700V, Semasa - Rata-rata Disahkan (Io): 20A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.75V @ 20A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GDP60P120B

bahagian bahagian: 5284

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 60A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 60A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GDP36Z060B

bahagian bahagian: 2188

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 36A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 36A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GDP24P060B

bahagian bahagian: 2169

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 24A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 24A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GP2D010A120B

bahagian bahagian: 10170

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GP2D010A120C

bahagian bahagian: 7417

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 10A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GDP30P120B

bahagian bahagian: 2235

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 81A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 30A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GDP15S120A

bahagian bahagian: 2215

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 15A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 15A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GP2D006A065C

bahagian bahagian: 25640

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 650V, Semasa - Rata-rata Disahkan (Io): 6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.65V @ 6A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GDP50P120B

bahagian bahagian: 1330

Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 50A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 50A, Kepantasan: No Recovery Time > 500mA (Io), Masa Pemulihan Berbalik (trr): 0ns,

GP3D050A120B

bahagian bahagian: 487

GP3D030A060B

bahagian bahagian: 9535

Jenis Diod: Schottky, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

GP3D060A120B

bahagian bahagian: 9497

GP3D050A060B

bahagian bahagian: 9474