Transistor - FET, MOSFET - Bujang

BSS606NH6327XTSA1

bahagian bahagian: 140760

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 3.2A, 10V,

BTS282ZE3180AATMA2

bahagian bahagian: 30675

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 49V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 80A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 36A, 10V,

BSP149H6906XTSA1

bahagian bahagian: 132013

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 660mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

BSC079N03SG

bahagian bahagian: 2311

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14.6A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.9 mOhm @ 40A, 10V,

BSP296NL6327HTSA1

bahagian bahagian: 2175

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 600 mOhm @ 1.2A, 10V,

BUZ31H3046XKSA1

bahagian bahagian: 2045

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 200 mOhm @ 9A, 5V,

BSP298H6327XUSA1

bahagian bahagian: 144742

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

BSG0812NDATMA1

bahagian bahagian: 2018

BSO613SPVGHUMA1

bahagian bahagian: 10789

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.44A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3.44A, 10V,

BSP615S2LHUMA1

bahagian bahagian: 1649

BSF024N03LT3GXUMA1

bahagian bahagian: 1599

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), 106A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.4 mOhm @ 20A, 10V,

BSO083N03MSGXUMA1

bahagian bahagian: 1515

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.3 mOhm @ 14A, 10V,

BSO051N03MS G

bahagian bahagian: 6171

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5.1 mOhm @ 18A, 10V,

BSL202SNL6327HTSA1

bahagian bahagian: 1570

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 4.5V,

BSD316SNL6327XT

bahagian bahagian: 121446

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 1.4A, 10V,

BSZ023N04LSATMA1

bahagian bahagian: 1508

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.35 mOhm @ 20A, 10V,

BTS121AE3045ANTMA1

bahagian bahagian: 6242

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 9.5A, 4.5V,

BSS169L6906HTSA1

bahagian bahagian: 1454

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

BSS159NL6906HTSA1

bahagian bahagian: 1478

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V,

BSP320SL6327HTSA1

bahagian bahagian: 1391

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 2.9A, 10V,

BSP324L6327HTSA1

bahagian bahagian: 1482

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 25 Ohm @ 170mA, 10V,

BSF050N03LQ3GXUMA1

bahagian bahagian: 1464

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Ta), 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 20A, 10V,

BSD816SNL6327HTSA1

bahagian bahagian: 1485

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 2.5V, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 1.4A, 2.5V,

BSB012NE2LX

bahagian bahagian: 1435

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 37A (Ta), 170A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.2 mOhm @ 30A, 10V,

BSB017N03LX3 G

bahagian bahagian: 1460

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 32A (Ta), 147A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.7 mOhm @ 30A, 10V,

BSB012N03LX3 G

bahagian bahagian: 1453

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A (Ta), 180A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.2 mOhm @ 30A, 10V,

BSP320SL6433HTMA1

bahagian bahagian: 1443

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 2.9A, 10V,

BSS123L6433HTMA1

bahagian bahagian: 1415

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

BSP135L6433HTMA1

bahagian bahagian: 1475

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

BSP296L6433HTMA1

bahagian bahagian: 1422

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 1.1A, 10V,

BSP125L6433HTMA1

bahagian bahagian: 1378

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

BSF077N06NT3GXUMA1

bahagian bahagian: 1439

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), 56A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7.7 mOhm @ 30A, 10V,

BSC889N03MSGATMA1

bahagian bahagian: 1403

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta) 44A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.1 mOhm @ 30A, 10V,

BSC889N03LSGATMA1

bahagian bahagian: 1458

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), 45A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 30A, 10V,

BSC884N03MS G

bahagian bahagian: 1453

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 34V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Ta), 85A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 30A, 10V,

BSC882N03MSGATMA1

bahagian bahagian: 1461

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 34V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 30A, 10V,