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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
BSC0906NSATMA1
Infineon Technologies

BSC0906NSATMA1

bahagian bahagian: 186905

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Ta), 63A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 30A, 10V,

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BSZ068N06NSATMA1
Infineon Technologies

BSZ068N06NSATMA1

bahagian bahagian: 182964

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 6.8 mOhm @ 20A, 10V,

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BSC090N03LSGATMA1
Infineon Technologies

BSC090N03LSGATMA1

bahagian bahagian: 170812

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), 48A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 30A, 10V,

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BSC014N04LSTATMA1
Infineon Technologies

BSC014N04LSTATMA1

bahagian bahagian: 16515

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Ta), 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.4 mOhm @ 50A, 10V,

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BSZ086P03NS3EGATMA1
Infineon Technologies

BSZ086P03NS3EGATMA1

bahagian bahagian: 16570

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13.5A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 8.6 mOhm @ 20A, 10V,

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BSC014N04LSIATMA1
Infineon Technologies

BSC014N04LSIATMA1

bahagian bahagian: 61407

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 31A (Ta), 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.45 mOhm @ 50A, 10V,

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BSC160N15NS5ATMA1
Infineon Technologies

BSC160N15NS5ATMA1

bahagian bahagian: 72783

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 56A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 8V, 10V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 28A, 10V,

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BSC026NE2LS5ATMA1
Infineon Technologies

BSC026NE2LS5ATMA1

bahagian bahagian: 154580

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A (Ta), 82A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 30A, 10V,

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BSC0901NSATMA1
Infineon Technologies

BSC0901NSATMA1

bahagian bahagian: 16599

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A (Ta), 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.9 mOhm @ 30A, 10V,

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BSZ088N03LSGATMA1
Infineon Technologies

BSZ088N03LSGATMA1

bahagian bahagian: 162357

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.8 mOhm @ 20A, 10V,

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BSZ0589NSATMA1
Infineon Technologies

BSZ0589NSATMA1

bahagian bahagian: 152540

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 17A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.4 mOhm @ 8A, 10V,

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BSC020N03MSGATMA1
Infineon Technologies

BSC020N03MSGATMA1

bahagian bahagian: 118300

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Ta), 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2 mOhm @ 30A, 10V,

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BSC036NE7NS3GATMA1
Infineon Technologies

BSC036NE7NS3GATMA1

bahagian bahagian: 50526

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.6 mOhm @ 50A, 10V,

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BSC010N04LSTATMA1
Infineon Technologies

BSC010N04LSTATMA1

bahagian bahagian: 16526

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A (Ta), 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1 mOhm @ 50A, 10V,

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BSC097N06NSATMA1
Infineon Technologies

BSC097N06NSATMA1

bahagian bahagian: 179136

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 46A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 9.7 mOhm @ 40A, 10V,

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BSC900N20NS3GATMA1
Infineon Technologies

BSC900N20NS3GATMA1

bahagian bahagian: 16593

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15.2A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 7.6A, 10V,

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BSZ165N04NSGATMA1
Infineon Technologies

BSZ165N04NSGATMA1

bahagian bahagian: 16510

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.9A (Ta), 31A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 16.5 mOhm @ 20A, 10V,

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BSC130P03LSGAUMA1
Infineon Technologies

BSC130P03LSGAUMA1

bahagian bahagian: 16579

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), 22.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 22.5A, 10V,

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BSZ0909NSATMA1
Infineon Technologies

BSZ0909NSATMA1

bahagian bahagian: 159981

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 34V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), 36A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 20A, 10V,

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BSZ088N03MSGATMA1
Infineon Technologies

BSZ088N03MSGATMA1

bahagian bahagian: 143671

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 20A, 10V,

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BSB014N04LX3GXUMA1
Infineon Technologies

BSB014N04LX3GXUMA1

bahagian bahagian: 16560

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Ta), 180A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.4 mOhm @ 30A, 10V,

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BSZ018NE2LSIATMA1
Infineon Technologies

BSZ018NE2LSIATMA1

bahagian bahagian: 16507

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.8 mOhm @ 20A, 10V,

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BSC882N03LSGATMA1
Infineon Technologies

BSC882N03LSGATMA1

bahagian bahagian: 146645

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 34V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 30A, 10V,

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BSZ075N08NS5ATMA1
Infineon Technologies

BSZ075N08NS5ATMA1

bahagian bahagian: 125045

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 7.5 mOhm @ 20A, 10V,

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BSB013NE2LXIXUMA1
Infineon Technologies

BSB013NE2LXIXUMA1

bahagian bahagian: 16579

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Ta), 163A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.3 mOhm @ 30A, 10V,

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BSC024NE2LSATMA1
Infineon Technologies

BSC024NE2LSATMA1

bahagian bahagian: 16599

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Ta), 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.4 mOhm @ 30A, 10V,

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BSC025N03MSGATMA1
Infineon Technologies

BSC025N03MSGATMA1

bahagian bahagian: 143497

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Ta). 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 30A, 10V,

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BSC120N03LSGATMA1
Infineon Technologies

BSC120N03LSGATMA1

bahagian bahagian: 105622

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), 39A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 30A, 10V,

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BSC034N03LSGATMA1
Infineon Technologies

BSC034N03LSGATMA1

bahagian bahagian: 197142

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.4 mOhm @ 30A, 10V,

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BSC017N04NSGATMA1
Infineon Technologies

BSC017N04NSGATMA1

bahagian bahagian: 16503

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Ta), 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.7 mOhm @ 50A, 10V,

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BSB028N06NN3GXUMA1
Infineon Technologies

BSB028N06NN3GXUMA1

bahagian bahagian: 16573

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Ta), 90A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.8 mOhm @ 30A, 10V,

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BSC030N03LSGATMA1
Infineon Technologies

BSC030N03LSGATMA1

bahagian bahagian: 181445

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Ta), 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 30A, 10V,

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BSZ100N03MSGATMA1
Infineon Technologies

BSZ100N03MSGATMA1

bahagian bahagian: 155577

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.1 mOhm @ 20A, 10V,

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BSP320SH6327XTSA1
Infineon Technologies

BSP320SH6327XTSA1

bahagian bahagian: 127092

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 2.9A, 10V,

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BSC060N10NS3GATMA1
Infineon Technologies

BSC060N10NS3GATMA1

bahagian bahagian: 71214

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14.9A (Ta), 90A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 50A, 10V,

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BUZ73L
Infineon Technologies

BUZ73L

bahagian bahagian: 92

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 3.5A, 5V,

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