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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
BSS138N E8004
Infineon Technologies

BSS138N E8004

bahagian bahagian: 164

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

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BSS138N E7854
Infineon Technologies

BSS138N E7854

bahagian bahagian: 6034

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

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BSS138N E6908
Infineon Technologies

BSS138N E6908

bahagian bahagian: 6083

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

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BSS138N E6433
Infineon Technologies

BSS138N E6433

bahagian bahagian: 174

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

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BSS127 E6327
Infineon Technologies

BSS127 E6327

bahagian bahagian: 172

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

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BSS126 E6906
Infineon Technologies

BSS126 E6906

bahagian bahagian: 106

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

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BSS126 E6327
Infineon Technologies

BSS126 E6327

bahagian bahagian: 152

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

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BSS123L7874XT
Infineon Technologies

BSS123L7874XT

bahagian bahagian: 161

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

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BSS119 E7978
Infineon Technologies

BSS119 E7978

bahagian bahagian: 169

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

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BSS123 E6433
Infineon Technologies

BSS123 E6433

bahagian bahagian: 169

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

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BSS119 E7796
Infineon Technologies

BSS119 E7796

bahagian bahagian: 122

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

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BSS119 E6433
Infineon Technologies

BSS119 E6433

bahagian bahagian: 145

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

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BSP92P E6327
Infineon Technologies

BSP92P E6327

bahagian bahagian: 140

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 260mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.8V, 10V, Rds On (Maks) @ Id, Vgs: 12 Ohm @ 260mA, 10V,

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BSP615S2L
Infineon Technologies

BSP615S2L

bahagian bahagian: 129

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.8A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 1.4A, 10V,

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BSP613P
Infineon Technologies

BSP613P

bahagian bahagian: 153

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 2.9A, 10V,

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BSP373 E6327
Infineon Technologies

BSP373 E6327

bahagian bahagian: 119

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 300 mOhm @ 1.7A, 10V,

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BSP324 E6327
Infineon Technologies

BSP324 E6327

bahagian bahagian: 172

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 25 Ohm @ 170mA, 10V,

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BSP372 E6327
Infineon Technologies

BSP372 E6327

bahagian bahagian: 155

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 310 mOhm @ 1.7A, 5V,

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BSP320S E6433
Infineon Technologies

BSP320S E6433

bahagian bahagian: 110

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 2.9A, 10V,

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BSP320S E6327
Infineon Technologies

BSP320S E6327

bahagian bahagian: 88

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 2.9A, 10V,

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BSP300L6327HUSA1
Infineon Technologies

BSP300L6327HUSA1

bahagian bahagian: 138

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 190mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 20 Ohm @ 190mA, 10V,

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BSP318S E6327
Infineon Technologies

BSP318S E6327

bahagian bahagian: 158

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.6A, 10V,

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BSP300 E6327
Infineon Technologies

BSP300 E6327

bahagian bahagian: 95

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 190mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 20 Ohm @ 190mA, 10V,

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BSP299 E6327
Infineon Technologies

BSP299 E6327

bahagian bahagian: 166

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 500V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 400mA, 10V,

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BSP298 E6327
Infineon Technologies

BSP298 E6327

bahagian bahagian: 6031

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

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BSP298L6327HUSA1
Infineon Technologies

BSP298L6327HUSA1

bahagian bahagian: 5657

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

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BSP296 E6433
Infineon Technologies

BSP296 E6433

bahagian bahagian: 127

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 700 mOhm @ 1.1A, 10V,

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BSP297 E6327
Infineon Technologies

BSP297 E6327

bahagian bahagian: 144

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 660mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

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BSP149 E6906
Infineon Technologies

BSP149 E6906

bahagian bahagian: 78

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 660mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

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BSP149L6906HTSA1
Infineon Technologies

BSP149L6906HTSA1

bahagian bahagian: 6023

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 660mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

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BSP149 E6327
Infineon Technologies

BSP149 E6327

bahagian bahagian: 156

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 660mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

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BSP135L6906HTSA1
Infineon Technologies

BSP135L6906HTSA1

bahagian bahagian: 6085

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

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BSP135L6327HTSA1
Infineon Technologies

BSP135L6327HTSA1

bahagian bahagian: 106

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

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BSP135 E6906
Infineon Technologies

BSP135 E6906

bahagian bahagian: 6091

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

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BSP135 E6327
Infineon Technologies

BSP135 E6327

bahagian bahagian: 155

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

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BSP129L6906HTSA1
Infineon Technologies

BSP129L6906HTSA1

bahagian bahagian: 84

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 240V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 350mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 350mA, 10V,

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