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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
BSC0904NSIATMA1
Infineon Technologies

BSC0904NSIATMA1

bahagian bahagian: 7480

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Ta), 78A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.7 mOhm @ 30A, 10V,

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BSZ050N03LSGATMA1
Infineon Technologies

BSZ050N03LSGATMA1

bahagian bahagian: 147799

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 20A, 10V,

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BSZ0994NSATMA1
Infineon Technologies

BSZ0994NSATMA1

bahagian bahagian: 149303

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 5A, 10V,

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BSC440N10NS3GATMA1
Infineon Technologies

BSC440N10NS3GATMA1

bahagian bahagian: 119139

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A (Ta), 18A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 44 mOhm @ 12A, 10V,

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BSZ065N03LSATMA1
Infineon Technologies

BSZ065N03LSATMA1

bahagian bahagian: 7461

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6.5 mOhm @ 20A, 10V,

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BSS159NH6906XTSA1
Infineon Technologies

BSS159NH6906XTSA1

bahagian bahagian: 190333

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 230mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V,

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BSP320SH6433XTMA1
Infineon Technologies

BSP320SH6433XTMA1

bahagian bahagian: 138092

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A (Tj), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 2.9A, 10V,

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BSL373SNH6327XTSA1
Infineon Technologies

BSL373SNH6327XTSA1

bahagian bahagian: 190490

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 230 mOhm @ 2A, 10V,

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BSL296SNH6327XTSA1
Infineon Technologies

BSL296SNH6327XTSA1

bahagian bahagian: 106246

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 460 mOhm @ 1.26A, 10V,

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BSS126H6906XTSA1
Infineon Technologies

BSS126H6906XTSA1

bahagian bahagian: 153215

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 21mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

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BSZ100N03LSGATMA1
Infineon Technologies

BSZ100N03LSGATMA1

bahagian bahagian: 89341

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 20A, 10V,

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BSC100N03MSGATMA1
Infineon Technologies

BSC100N03MSGATMA1

bahagian bahagian: 196508

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), 44A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 30A, 10V,

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BSS169H6906XTSA1
Infineon Technologies

BSS169H6906XTSA1

bahagian bahagian: 152457

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

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BSC090N03MSGATMA1
Infineon Technologies

BSC090N03MSGATMA1

bahagian bahagian: 195504

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), 48A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 30A, 10V,

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BSC080N03LSGATMA1
Infineon Technologies

BSC080N03LSGATMA1

bahagian bahagian: 140304

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), 53A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 30A, 10V,

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BSZ120P03NS3EGATMA1
Infineon Technologies

BSZ120P03NS3EGATMA1

bahagian bahagian: 146859

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 20A, 10V,

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BSZ120P03NS3GATMA1
Infineon Technologies

BSZ120P03NS3GATMA1

bahagian bahagian: 154285

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 20A, 10V,

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BSS138WH6327XTSA1
Infineon Technologies

BSS138WH6327XTSA1

bahagian bahagian: 171697

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V,

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BSP88H6327XTSA1
Infineon Technologies

BSP88H6327XTSA1

bahagian bahagian: 183070

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 240V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 350mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.8V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 350mA, 10V,

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BSZ180P03NS3EGATMA1
Infineon Technologies

BSZ180P03NS3EGATMA1

bahagian bahagian: 186097

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), 39.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 20A, 10V,

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BSZ180P03NS3GATMA1
Infineon Technologies

BSZ180P03NS3GATMA1

bahagian bahagian: 124428

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), 39.6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 20A, 10V,

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BSC886N03LSGATMA1
Infineon Technologies

BSC886N03LSGATMA1

bahagian bahagian: 123249

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), 65A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 30A, 10V,

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BSZ130N03MSGATMA1
Infineon Technologies

BSZ130N03MSGATMA1

bahagian bahagian: 7438

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11.5 mOhm @ 20A, 10V,

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BSS139H6906XTSA1
Infineon Technologies

BSS139H6906XTSA1

bahagian bahagian: 186343

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 0V, 10V, Rds On (Maks) @ Id, Vgs: 14 Ohm @ 100mA, 10V,

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BSC0996NSATMA1
Infineon Technologies

BSC0996NSATMA1

bahagian bahagian: 103955

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 34V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 8A, 10V,

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BSC079N03LSCGATMA1
Infineon Technologies

BSC079N03LSCGATMA1

bahagian bahagian: 187012

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.9 mOhm @ 30A, 10V,

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BSL372SNH6327XTSA1
Infineon Technologies

BSL372SNH6327XTSA1

bahagian bahagian: 143818

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 220 mOhm @ 2A, 10V,

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BSL207SPH6327XTSA1
Infineon Technologies

BSL207SPH6327XTSA1

bahagian bahagian: 128196

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 41 mOhm @ 6A, 4.5V,

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BSL606SNH6327XTSA1
Infineon Technologies

BSL606SNH6327XTSA1

bahagian bahagian: 124505

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 60 mOhm @ 4.5A, 10V,

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BSZ340N08NS3GATMA1
Infineon Technologies

BSZ340N08NS3GATMA1

bahagian bahagian: 7427

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), 23A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 12A, 10V,

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BSL202SNH6327XTSA1
Infineon Technologies

BSL202SNH6327XTSA1

bahagian bahagian: 109229

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 4.5V,

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BSC0909NSATMA1
Infineon Technologies

BSC0909NSATMA1

bahagian bahagian: 174435

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 34V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Ta), 44A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.2 mOhm @ 20A, 10V,

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BSL303SPEH6327XTSA1
Infineon Technologies

BSL303SPEH6327XTSA1

bahagian bahagian: 185383

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 6.3A, 10V,

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BSC120N03MSGATMA1
Infineon Technologies

BSC120N03MSGATMA1

bahagian bahagian: 174610

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Ta), 39A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 30A, 10V,

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BSL802SNH6327XTSA1
Infineon Technologies

BSL802SNH6327XTSA1

bahagian bahagian: 143319

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 2.5V, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 7.5A, 2.5V,

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BSL302SNH6327XTSA1
Infineon Technologies

BSL302SNH6327XTSA1

bahagian bahagian: 181075

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 7.1A, 10V,

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