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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
IPP65R190E6XKSA1
Infineon Technologies

IPP65R190E6XKSA1

bahagian bahagian: 22907

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20.2A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 190 mOhm @ 7.3A, 10V,

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IPI120N06S402AKSA2
Infineon Technologies

IPI120N06S402AKSA2

bahagian bahagian: 48418

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.8 mOhm @ 100A, 10V,

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IPZA60R180P7XKSA1
Infineon Technologies

IPZA60R180P7XKSA1

bahagian bahagian: 1306

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 5.6A, 10V,

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IPA60R400CEXKSA1
Infineon Technologies

IPA60R400CEXKSA1

bahagian bahagian: 53935

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 3.8A, 10V,

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SPW55N80C3FKSA1
Infineon Technologies

SPW55N80C3FKSA1

bahagian bahagian: 4868

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 54.9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 32.6A, 10V,

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IPI045N10N3GXKSA1
Infineon Technologies

IPI045N10N3GXKSA1

bahagian bahagian: 1374

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 4.5 mOhm @ 100A, 10V,

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SPW16N50C3FKSA1
Infineon Technologies

SPW16N50C3FKSA1

bahagian bahagian: 1221

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 560V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 280 mOhm @ 10A, 10V,

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IRFS3306PBF
Infineon Technologies

IRFS3306PBF

bahagian bahagian: 27199

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.2 mOhm @ 75A, 10V,

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IRF4104PBF
Infineon Technologies

IRF4104PBF

bahagian bahagian: 41415

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 75A, 10V,

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IPP023N04NGXKSA1
Infineon Technologies

IPP023N04NGXKSA1

bahagian bahagian: 37393

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 90A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.3 mOhm @ 90A, 10V,

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IPZA60R037P7XKSA1
Infineon Technologies

IPZA60R037P7XKSA1

bahagian bahagian: 433

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 76A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 37 mOhm @ 29.5A, 10V,

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IPP80R1K2P7XKSA1
Infineon Technologies

IPP80R1K2P7XKSA1

bahagian bahagian: 44199

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 1.7A, 10V,

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IPA65R190C7XKSA1
Infineon Technologies

IPA65R190C7XKSA1

bahagian bahagian: 21681

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 190 mOhm @ 5.7A, 10V,

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IPW60R180C7XKSA1
Infineon Technologies

IPW60R180C7XKSA1

bahagian bahagian: 18999

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 5.3A, 10V,

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IRFB4620PBF
Infineon Technologies

IRFB4620PBF

bahagian bahagian: 29305

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 72.5 mOhm @ 15A, 10V,

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IPZA60R080P7XKSA1
Infineon Technologies

IPZA60R080P7XKSA1

bahagian bahagian: 1353

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 37A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 11.8A, 10V,

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IPA60R099P6XKSA1
Infineon Technologies

IPA60R099P6XKSA1

bahagian bahagian: 13094

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 37.9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 99 mOhm @ 14.5A, 10V,

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IPA80R1K0CEXKSA2
Infineon Technologies

IPA80R1K0CEXKSA2

bahagian bahagian: 40921

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 800V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 950 mOhm @ 3.6A, 10V,

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IRLL3303PBF
Infineon Technologies

IRLL3303PBF

bahagian bahagian: 64248

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 4.6A, 10V,

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IRLR2908PBF
Infineon Technologies

IRLR2908PBF

bahagian bahagian: 38404

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 23A, 10V,

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IPW60R040C7XKSA1
Infineon Technologies

IPW60R040C7XKSA1

bahagian bahagian: 5938

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 24.9A, 10V,

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IPI100N06S3L04XK
Infineon Technologies

IPI100N06S3L04XK

bahagian bahagian: 28314

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 3.8 mOhm @ 80A, 10V,

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IPP16CN10NGXKSA1
Infineon Technologies

IPP16CN10NGXKSA1

bahagian bahagian: 42632

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 53A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 16.5 mOhm @ 53A, 10V,

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IPW60R070P6XKSA1
Infineon Technologies

IPW60R070P6XKSA1

bahagian bahagian: 10492

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 53.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 20.6A, 10V,

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IRLSL4030PBF
Infineon Technologies

IRLSL4030PBF

bahagian bahagian: 11777

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.3 mOhm @ 110A, 10V,

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IRF7413PBF
Infineon Technologies

IRF7413PBF

bahagian bahagian: 66589

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 7.3A, 10V,

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IRF7473TRPBF
Infineon Technologies

IRF7473TRPBF

bahagian bahagian: 115934

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 26 mOhm @ 4.1A, 10V,

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IPA65R600E6XKSA1
Infineon Technologies

IPA65R600E6XKSA1

bahagian bahagian: 392

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 600 mOhm @ 2.1A, 10V,

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IPW60R125P6XKSA1
Infineon Technologies

IPW60R125P6XKSA1

bahagian bahagian: 15829

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 11.6A, 10V,

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IPW65R095C7XKSA1
Infineon Technologies

IPW65R095C7XKSA1

bahagian bahagian: 10122

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 95 mOhm @ 11.8A, 10V,

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IPW60R160C6FKSA1
Infineon Technologies

IPW60R160C6FKSA1

bahagian bahagian: 1525

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 11.3A, 10V,

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IPW65R099C6FKSA1
Infineon Technologies

IPW65R099C6FKSA1

bahagian bahagian: 10283

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 38A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 99 mOhm @ 12.8A, 10V,

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SPP15P10PLHXKSA1
Infineon Technologies

SPP15P10PLHXKSA1

bahagian bahagian: 276

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 200 mOhm @ 11.3A, 10V,

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IPS65R950C6AKMA1
Infineon Technologies

IPS65R950C6AKMA1

bahagian bahagian: 61555

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 650V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 950 mOhm @ 1.5A, 10V,

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IRFSL7762PBF
Infineon Technologies

IRFSL7762PBF

bahagian bahagian: 40928

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 85A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 6.7 mOhm @ 51A, 10V,

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IPA70R450P7SXKSA1
Infineon Technologies

IPA70R450P7SXKSA1

bahagian bahagian: 599

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 700V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 10A, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 450 mOhm @ 2.3A, 10V,

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