Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - Bipolar (BJT) - Tunggal, Pra Bias

  • Rumah
  •  
  • Transistor - Bipolar (BJT) - Tunggal, Pra Bias
BCR169WH6327XTSA1
Infineon Technologies

BCR169WH6327XTSA1

bahagian bahagian: 114304

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Senarai harapan
BCR141WH6327XTSA1
Infineon Technologies

BCR141WH6327XTSA1

bahagian bahagian: 102447

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Senarai harapan
BCR116WH6327XTSA1
Infineon Technologies

BCR116WH6327XTSA1

bahagian bahagian: 196750

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR129WH6327XTSA1
Infineon Technologies

BCR129WH6327XTSA1

bahagian bahagian: 176629

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Senarai harapan
BCR135WH6327XTSA1
Infineon Technologies

BCR135WH6327XTSA1

bahagian bahagian: 139593

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR192WH6327XTSA1
Infineon Technologies

BCR192WH6327XTSA1

bahagian bahagian: 160837

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR166WH6327XTSA1
Infineon Technologies

BCR166WH6327XTSA1

bahagian bahagian: 137604

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR133WH6327XTSA1
Infineon Technologies

BCR133WH6327XTSA1

bahagian bahagian: 156605

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Senarai harapan
BCR119WH6327XTSA1
Infineon Technologies

BCR119WH6327XTSA1

bahagian bahagian: 100588

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Senarai harapan
BCR129E6327HTSA1
Infineon Technologies

BCR129E6327HTSA1

bahagian bahagian: 176499

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Senarai harapan
BCR166E6433HTMA1
Infineon Technologies

BCR166E6433HTMA1

bahagian bahagian: 184484

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR196E6327HTSA1
Infineon Technologies

BCR196E6327HTSA1

bahagian bahagian: 112740

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Senarai harapan
BCR108E6433HTMA1
Infineon Technologies

BCR108E6433HTMA1

bahagian bahagian: 162273

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR169E6327HTSA1
Infineon Technologies

BCR169E6327HTSA1

bahagian bahagian: 141275

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Senarai harapan
BCR191E6327HTSA1
Infineon Technologies

BCR191E6327HTSA1

bahagian bahagian: 162604

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Senarai harapan
BCR185E6433HTMA1
Infineon Technologies

BCR185E6433HTMA1

bahagian bahagian: 106317

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR116E6433HTMA1
Infineon Technologies

BCR116E6433HTMA1

bahagian bahagian: 137700

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR162E6327HTSA1
Infineon Technologies

BCR162E6327HTSA1

bahagian bahagian: 108478

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

Senarai harapan
BCR146E6327HTSA1
Infineon Technologies

BCR146E6327HTSA1

bahagian bahagian: 186500

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Senarai harapan
BCR119E6327HTSA1
Infineon Technologies

BCR119E6327HTSA1

bahagian bahagian: 189129

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Senarai harapan
BCR141E6433HTMA1
Infineon Technologies

BCR141E6433HTMA1

bahagian bahagian: 175032

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Senarai harapan
BCR183E6433HTMA1
Infineon Technologies

BCR183E6433HTMA1

bahagian bahagian: 103535

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Senarai harapan
BCR192E6327HTSA1
Infineon Technologies

BCR192E6327HTSA1

bahagian bahagian: 151355

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR141E6327HTSA1
Infineon Technologies

BCR141E6327HTSA1

bahagian bahagian: 118113

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Senarai harapan
BCR135E6433HTMA1
Infineon Technologies

BCR135E6433HTMA1

bahagian bahagian: 178566

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan
BCR198E6433HTMA1
Infineon Technologies

BCR198E6433HTMA1

bahagian bahagian: 129349

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Senarai harapan