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Transistor - Bipolar (BJT) - Tunggal, Pra Bias

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  • Transistor - Bipolar (BJT) - Tunggal, Pra Bias
BCR 162F E6327
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BCR 162F E6327

bahagian bahagian: 1848

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

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BCR158WE6327HTSA1
Infineon Technologies

BCR158WE6327HTSA1

bahagian bahagian: 1840

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 162 B6327
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BCR 162 B6327

bahagian bahagian: 1887

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

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BCR 158T E6327
Infineon Technologies

BCR 158T E6327

bahagian bahagian: 1908

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 158L3 E6327
Infineon Technologies

BCR 158L3 E6327

bahagian bahagian: 1838

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 158 B6327
Infineon Technologies

BCR 158 B6327

bahagian bahagian: 1880

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 158F E6327
Infineon Technologies

BCR 158F E6327

bahagian bahagian: 1870

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 153T E6327
Infineon Technologies

BCR 153T E6327

bahagian bahagian: 1846

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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BCR 153L3 E6327
Infineon Technologies

BCR 153L3 E6327

bahagian bahagian: 1899

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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BCR 153F E6327
Infineon Technologies

BCR 153F E6327

bahagian bahagian: 1847

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

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BCR 151L3 E6327
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BCR 151L3 E6327

bahagian bahagian: 1890

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 100 kOhms, Perintang - Pangkalan Pemancar (R2): 100 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 151T E6327
Infineon Technologies

BCR 151T E6327

bahagian bahagian: 1855

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 100 kOhms, Perintang - Pangkalan Pemancar (R2): 100 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 151F E6327
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BCR 151F E6327

bahagian bahagian: 1827

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 100 kOhms, Perintang - Pangkalan Pemancar (R2): 100 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 149T E6327
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BCR 149T E6327

bahagian bahagian: 1902

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 149L3 E6327
Infineon Technologies

BCR 149L3 E6327

bahagian bahagian: 1877

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 149F E6327
Infineon Technologies

BCR 149F E6327

bahagian bahagian: 3262

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 148T E6327
Infineon Technologies

BCR 148T E6327

bahagian bahagian: 1882

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR148WE6327BTSA1
Infineon Technologies

BCR148WE6327BTSA1

bahagian bahagian: 1902

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148F E6327
Infineon Technologies

BCR 148F E6327

bahagian bahagian: 3260

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148L3 E6327
Infineon Technologies

BCR 148L3 E6327

bahagian bahagian: 1913

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148F B6327
Infineon Technologies

BCR 148F B6327

bahagian bahagian: 1865

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 148 B6327
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BCR 148 B6327

bahagian bahagian: 1911

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 146T E6327
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BCR 146T E6327

bahagian bahagian: 1826

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 146L3 E6327
Infineon Technologies

BCR 146L3 E6327

bahagian bahagian: 3245

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 146F E6327
Infineon Technologies

BCR 146F E6327

bahagian bahagian: 1912

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 70mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR142WE6327HTSA1
Infineon Technologies

BCR142WE6327HTSA1

bahagian bahagian: 1824

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 142L3 E6327
Infineon Technologies

BCR 142L3 E6327

bahagian bahagian: 1858

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 142T E6327
Infineon Technologies

BCR 142T E6327

bahagian bahagian: 1827

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR142B6327HTLA1
Infineon Technologies

BCR142B6327HTLA1

bahagian bahagian: 1896

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 142F E6327
Infineon Technologies

BCR 142F E6327

bahagian bahagian: 1836

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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BCR 141T E6327
Infineon Technologies

BCR 141T E6327

bahagian bahagian: 1866

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 141F E6327
Infineon Technologies

BCR 141F E6327

bahagian bahagian: 1842

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 141L3 E6327
Infineon Technologies

BCR 141L3 E6327

bahagian bahagian: 1865

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

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BCR 139T E6327
Infineon Technologies

BCR 139T E6327

bahagian bahagian: 1828

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 139L3 E6327
Infineon Technologies

BCR 139L3 E6327

bahagian bahagian: 1852

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

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BCR 139F E6327
Infineon Technologies

BCR 139F E6327

bahagian bahagian: 1851

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Senarai harapan