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Ingatan

DS2502/T&R
Maxim Integrated

DS2502/T&R

bahagian bahagian: 8673

Jenis Ingatan: Non-Volatile, Format Memori: EPROM, Teknologi: EPROM - OTP, Saiz Ingatan: 1Kb (128 x 8),

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DS28DG02G-3C+
Maxim Integrated

DS28DG02G-3C+

bahagian bahagian: 10007

Jenis Ingatan: Non-Volatile, Format Memori: EEPROM, Teknologi: EEPROM, Saiz Ingatan: 2Kb (256 x 8), Kekerapan Jam: 2MHz,

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DS2227-100
Maxim Integrated

DS2227-100

bahagian bahagian: 892

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 4Mb (128K x 32, 256K x 16, 512K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 100ns,

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DS2433AX-S#T
Maxim Integrated

DS2433AX-S#T

bahagian bahagian: 5345

Jenis Ingatan: Non-Volatile, Format Memori: EEPROM, Teknologi: EEPROM, Saiz Ingatan: 4Kb (256 x 16),

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DS1345BL-100
Maxim Integrated

DS1345BL-100

bahagian bahagian: 797

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 100ns,

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DS28DG02E-3C+
Maxim Integrated

DS28DG02E-3C+

bahagian bahagian: 10034

Jenis Ingatan: Non-Volatile, Format Memori: EEPROM, Teknologi: EEPROM, Saiz Ingatan: 2Kb (256 x 8), Kekerapan Jam: 2MHz,

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DS2045W-100#
Maxim Integrated

DS2045W-100#

bahagian bahagian: 1961

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 100ns,

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DS2070W-100#
Maxim Integrated

DS2070W-100#

bahagian bahagian: 1972

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 16Mb (2M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 100ns,

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DS2030L-100#
Maxim Integrated

DS2030L-100#

bahagian bahagian: 1835

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 100ns,

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DS2045Y-70#
Maxim Integrated

DS2045Y-70#

bahagian bahagian: 1965

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 70ns,

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DS2030W-100#
Maxim Integrated

DS2030W-100#

bahagian bahagian: 1816

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 100ns,

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DS2045Y-100#
Maxim Integrated

DS2045Y-100#

bahagian bahagian: 1898

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 100ns,

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DS2045AB-70#
Maxim Integrated

DS2045AB-70#

bahagian bahagian: 1861

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 70ns,

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DS2045AB-100#
Maxim Integrated

DS2045AB-100#

bahagian bahagian: 1846

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 100ns,

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DS2030AB-70#
Maxim Integrated

DS2030AB-70#

bahagian bahagian: 1810

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 70ns,

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DS3030W-100#
Maxim Integrated

DS3030W-100#

bahagian bahagian: 1893

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 100ns,

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DS2030AB-100#
Maxim Integrated

DS2030AB-100#

bahagian bahagian: 1831

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 100ns,

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DS3045W-100#
Maxim Integrated

DS3045W-100#

bahagian bahagian: 2009

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 100ns,

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DS2065W-100#
Maxim Integrated

DS2065W-100#

bahagian bahagian: 1964

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 8Mb (1M x 8), Tulis Masa Kitaran - Perkataan, Halaman: 100ns,

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DS2045L-100#
Maxim Integrated

DS2045L-100#

bahagian bahagian: 1871

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 1Mb (128K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 100ns,

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DS2030Y-70#
Maxim Integrated

DS2030Y-70#

bahagian bahagian: 1873

Jenis Ingatan: Non-Volatile, Format Memori: NVSRAM, Teknologi: NVSRAM (Non-Volatile SRAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 70ns,

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DS28E04S-100+
Maxim Integrated

DS28E04S-100+

bahagian bahagian: 14538

Jenis Ingatan: Non-Volatile, Format Memori: EEPROM, Teknologi: EEPROM, Saiz Ingatan: 4Kb (256 x 16),

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DS24B33+
Maxim Integrated

DS24B33+

bahagian bahagian: 24097

Jenis Ingatan: Non-Volatile, Format Memori: EEPROM, Teknologi: EEPROM, Saiz Ingatan: 4Kb (256 x 16),

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DS2431P-A1+
Maxim Integrated

DS2431P-A1+

bahagian bahagian: 23173

Jenis Ingatan: Non-Volatile, Format Memori: EEPROM, Teknologi: EEPROM, Saiz Ingatan: 1Kb (256 x 4),

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DS2502AX-500+T
Maxim Integrated

DS2502AX-500+T

bahagian bahagian: 21590

Jenis Ingatan: Non-Volatile, Format Memori: EPROM, Teknologi: EPROM - OTP, Saiz Ingatan: 1Kb (128 x 8),

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DS28EC20+
Maxim Integrated

DS28EC20+

bahagian bahagian: 21383

Jenis Ingatan: Non-Volatile, Format Memori: EEPROM, Teknologi: EEPROM, Saiz Ingatan: 20Kb (256 x 80),

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DS24B33S+
Maxim Integrated

DS24B33S+

bahagian bahagian: 23024

Jenis Ingatan: Non-Volatile, Format Memori: EEPROM, Teknologi: EEPROM, Saiz Ingatan: 4Kb (256 x 16),

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DS28EC20P+
Maxim Integrated

DS28EC20P+

bahagian bahagian: 21792

Jenis Ingatan: Non-Volatile, Format Memori: EEPROM, Teknologi: EEPROM, Saiz Ingatan: 20Kb (256 x 80),

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DS2502P-E48+
Maxim Integrated

DS2502P-E48+

bahagian bahagian: 22849

Jenis Ingatan: Non-Volatile, Format Memori: EPROM, Teknologi: EPROM - OTP, Saiz Ingatan: 1Kb (128 x 8),

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DS2502G+U
Maxim Integrated

DS2502G+U

bahagian bahagian: 25958

Jenis Ingatan: Non-Volatile, Format Memori: EPROM, Teknologi: EPROM - OTP, Saiz Ingatan: 1Kb (128 x 8),

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DS28E07Q+U
Maxim Integrated

DS28E07Q+U

bahagian bahagian: 25836

Jenis Ingatan: Non-Volatile, Format Memori: EEPROM, Teknologi: EEPROM, Saiz Ingatan: 1Kb (256 x 4),

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DS28E04S-100+T
Maxim Integrated

DS28E04S-100+T

bahagian bahagian: 29708

Jenis Ingatan: Non-Volatile, Format Memori: EEPROM, Teknologi: EEPROM, Saiz Ingatan: 4Kb (256 x 16),

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DS24L65P+
Maxim Integrated

DS24L65P+

bahagian bahagian: 34570

Jenis Ingatan: Non-Volatile, Format Memori: EEPROM, Teknologi: EEPROM, Saiz Ingatan: 512b (32 Bytes x 2 pages), Kekerapan Jam: 400kHz,

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DS2502-E48+
Maxim Integrated

DS2502-E48+

bahagian bahagian: 22356

Jenis Ingatan: Non-Volatile, Format Memori: EPROM, Teknologi: EPROM - OTP, Saiz Ingatan: 1Kb (128 x 8),

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DS24B33G+T&R
Maxim Integrated

DS24B33G+T&R

bahagian bahagian: 44591

Jenis Ingatan: Non-Volatile, Format Memori: EEPROM, Teknologi: EEPROM, Saiz Ingatan: 4Kb (256 x 16),

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DS28E25G+T
Maxim Integrated

DS28E25G+T

bahagian bahagian: 49964

Jenis Ingatan: Non-Volatile, Format Memori: EEPROM, Teknologi: EEPROM, Saiz Ingatan: 4Kb (4K x 1),

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