Transistor - FET, MOSFET - Bujang

BUK9628-100A,118

bahagian bahagian: 95078

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 25A, 10V,

BUK9606-40B,118

bahagian bahagian: 103537

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 25A, 10V,

BUK9Y1R9-40HX

bahagian bahagian: 5838

BUK7Y2R0-40HX

bahagian bahagian: 7774

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2 mOhm @ 25A, 10V,

BUK9Y2R4-40HX

bahagian bahagian: 7716

BUK7628-100A,118

bahagian bahagian: 105683

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 47A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 25A, 10V,

BUK769R6-80E,118

bahagian bahagian: 101913

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 9.6 mOhm @ 20A, 10V,

BUK768R3-60E,118

bahagian bahagian: 102287

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 8.3 mOhm @ 20A, 10V,

BUK9Y4R8-60E,115

bahagian bahagian: 118590

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 4.1 mOhm @ 25A, 10V,

BUK766R0-60E,118

bahagian bahagian: 84326

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 25A, 10V,

BUK9615-100E,118

bahagian bahagian: 105223

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 66A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 15A, 10V,

BUK7Y12-100EX

bahagian bahagian: 118630

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 85A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 25A, 10V,

BUK9Y8R5-80EX

bahagian bahagian: 118668

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 25A, 10V,

BUK7Y2R5-40HX

bahagian bahagian: 7703

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 25A, 10V,

BUK9612-55B,118

bahagian bahagian: 115385

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 25A, 10V,

BUK9Y2R8-40HX

bahagian bahagian: 7665

BUK6607-75C,118

bahagian bahagian: 102044

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 25A, 10V,

BUK7618-55,118

bahagian bahagian: 118883

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 57A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 25A, 10V,

BUK7880-55A/CUX

bahagian bahagian: 182954

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 10A, 10V,

BUK9880-55A/CUX

bahagian bahagian: 116251

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 73 mOhm @ 8A, 10V,

BUK9Y11-80EX

bahagian bahagian: 141658

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 84A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 25A, 10V,

BUK9Y3R0-40E,115

bahagian bahagian: 141943

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 2.5 mOhm @ 25A, 10V,

BUK7Y15-100EX

bahagian bahagian: 141750

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 68A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 20A, 10V,

BUK7Y3R0-40HX

bahagian bahagian: 7614

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3 mOhm @ 25A, 10V,

BUK6Y32-60PX

bahagian bahagian: 7654

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 6.6A, 10V,

BUK6Y15-40PX

bahagian bahagian: 7654

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 63A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 11A, 10V,

BUK6Y12-30PX

bahagian bahagian: 7601

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 67A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 11A, 10V,

BUK9614-55A,118

bahagian bahagian: 145055

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 73A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 25A, 10V,

BUK663R5-30C,118

bahagian bahagian: 154583

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 mOhm @ 25A, 10V,

BUK9Y7R2-60E,115

bahagian bahagian: 159976

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 5.6 mOhm @ 25A, 10V,

BUK7Y7R2-60EX

bahagian bahagian: 159963

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V,

BUK9Y19-100E,115

bahagian bahagian: 160030

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 56A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 15A, 10V,

BUK7611-55B,118

bahagian bahagian: 159766

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 25A, 10V,

BUK7613-75B,118

bahagian bahagian: 128007

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 25A, 10V,

BUK7640-100A,118

bahagian bahagian: 128337

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 37A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 25A, 10V,

BUK7631-100E,118

bahagian bahagian: 153024

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 10A, 10V,