Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

BUK9Y25-80E,115

Nexperia USA Inc.

BUK9Y25-80E,115

bahagian bahagian: 158384

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 37A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 10A, 5V,

Senarai harapan

BUK7Y10-30B,115

Nexperia USA Inc.

BUK7Y10-30B,115

bahagian bahagian: 111872

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 67A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 25A, 10V,

Senarai harapan

BUK7Y13-40B,115

Nexperia USA Inc.

BUK7Y13-40B,115

bahagian bahagian: 85175

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 58A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 25A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7M22-80EX

bahagian bahagian: 115588

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 37A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 10A, 10V,

Senarai harapan

BUK6213-30A,118

Nexperia USA Inc.

BUK6213-30A,118

bahagian bahagian: 195714

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 55A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 10A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK9M6R6-30EX

bahagian bahagian: 111329

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 5.3 mOhm @ 20A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK9M9R1-40EX

bahagian bahagian: 180232

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 64A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 7.3 mOhm @ 20A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK9M28-80EX

bahagian bahagian: 180909

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 10A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK9M43-100EX

bahagian bahagian: 192680

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 25A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 43 mOhm @ 5A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK9M15-60EX

bahagian bahagian: 168419

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 47A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 10A, 10V,

Senarai harapan

BUK7Y53-100B,115

Nexperia USA Inc.

BUK7Y53-100B,115

bahagian bahagian: 173564

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 10A, 10V,

Senarai harapan

BUK7Y18-55B,115

Nexperia USA Inc.

BUK7Y18-55B,115

bahagian bahagian: 185207

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 47.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 18 mOhm @ 20A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7M8R0-40EX

bahagian bahagian: 133300

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 69A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 20A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7M12-60EX

bahagian bahagian: 194417

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 53A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 15A, 10V,

Senarai harapan

BUK9Y53-100B,115

Nexperia USA Inc.

BUK9Y53-100B,115

bahagian bahagian: 117369

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 49 mOhm @ 10A, 10V,

Senarai harapan

Nexperia USA Inc.

BSP126,135

bahagian bahagian: 181906

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 375mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 300mA, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7M27-80EX

bahagian bahagian: 181775

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 5A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK9M35-80EX

bahagian bahagian: 172353

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 26A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 5A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK9M19-60EX

bahagian bahagian: 141900

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 38A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 10A, 10V,

Senarai harapan

BUK9Y25-60E,115

Nexperia USA Inc.

BUK9Y25-60E,115

bahagian bahagian: 135009

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 21.5 mOhm @ 10A, 10V,

Senarai harapan

BUK9Y41-80E,115

Nexperia USA Inc.

BUK9Y41-80E,115

bahagian bahagian: 158657

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 24A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 41 mOhm @ 5A, 10V,

Senarai harapan

BUK9245-55A,118

Nexperia USA Inc.

BUK9245-55A,118

bahagian bahagian: 135060

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 28A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 5A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK9M10-30EX

bahagian bahagian: 108711

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 54A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 7.8 mOhm @ 15A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK9M24-60EX

bahagian bahagian: 184221

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 32A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 10A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7M10-40EX

bahagian bahagian: 182442

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 56A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 15A, 10V,

Senarai harapan

Nexperia USA Inc.

BSS123,215

bahagian bahagian: 150743

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 120mA, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7M12-40EX

bahagian bahagian: 189511

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 48A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 12 mOhm @ 15A, 10V,

Senarai harapan

BUK7Y20-30B,115

Nexperia USA Inc.

BUK7Y20-30B,115

bahagian bahagian: 187615

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 20A, 10V,

Senarai harapan

BUK9Y22-30B,115

Nexperia USA Inc.

BUK9Y22-30B,115

bahagian bahagian: 143999

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 37.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 20A, 10V,

Senarai harapan

BUK9Y72-80E,115

Nexperia USA Inc.

BUK9Y72-80E,115

bahagian bahagian: 140495

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 72 mOhm @ 5A, 10V,

Senarai harapan

BUK9Y43-60E,115

Nexperia USA Inc.

BUK9Y43-60E,115

bahagian bahagian: 139643

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 41 mOhm @ 5A, 10V,

Senarai harapan

BUK9Y21-40E,115

Nexperia USA Inc.

BUK9Y21-40E,115

bahagian bahagian: 168547

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 10A, 10V,

Senarai harapan

BUK9237-55A,118

Nexperia USA Inc.

BUK9237-55A,118

bahagian bahagian: 193857

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 32A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 15A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7Y43-60EX

bahagian bahagian: 106628

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 22A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 43 mOhm @ 5A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7Y72-80EX

bahagian bahagian: 172331

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 72 mOhm @ 5A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7Y21-40EX

bahagian bahagian: 183768

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 33A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 10A, 10V,

Senarai harapan

1135

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