Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

BUK9637-100E,118

Nexperia USA Inc.

BUK9637-100E,118

bahagian bahagian: 152952

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 31A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 10A, 10V,

Senarai harapan

BUK7675-100A,118

Nexperia USA Inc.

BUK7675-100A,118

bahagian bahagian: 154233

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 13A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7Y3R5-40HX

bahagian bahagian: 171792

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3.5 mOhm @ 25A, 10V,

Senarai harapan

BUK9Y30-75B,115

Nexperia USA Inc.

BUK9Y30-75B,115

bahagian bahagian: 158256

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 34A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 15A, 10V,

Senarai harapan

BUK7Y28-75B,115

Nexperia USA Inc.

BUK7Y28-75B,115

bahagian bahagian: 57275

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 15A, 10V,

Senarai harapan

Nexperia USA Inc.

BSS84AK,215

bahagian bahagian: 138744

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 180mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V,

Senarai harapan

BUK7620-55A,118

Nexperia USA Inc.

BUK7620-55A,118

bahagian bahagian: 162199

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 54A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 25A, 10V,

Senarai harapan

Nexperia USA Inc.

BSH103,215

bahagian bahagian: 166505

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 850mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, Rds On (Maks) @ Id, Vgs: 400 mOhm @ 500mA, 4.5V,

Senarai harapan

Nexperia USA Inc.

BUK7Y8R7-60EX

bahagian bahagian: 189124

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 87A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 8.7 mOhm @ 20A, 10V,

Senarai harapan

BUK9Y4R4-40E,115

Nexperia USA Inc.

BUK9Y4R4-40E,115

bahagian bahagian: 176290

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 3.7 mOhm @ 25A, 10V,

Senarai harapan

BUK9Y22-100E,115

Nexperia USA Inc.

BUK9Y22-100E,115

bahagian bahagian: 176273

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 21.5 mOhm @ 15A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7Y22-100EX

bahagian bahagian: 176258

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 49A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 15A, 10V,

Senarai harapan

BUK7Y07-30B,115

Nexperia USA Inc.

BUK7Y07-30B,115

bahagian bahagian: 169049

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7 mOhm @ 25A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK6Y25-40PX

bahagian bahagian: 7563

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 38A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 7.9A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK6Y20-30PX

bahagian bahagian: 7565

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 41A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 8.6A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK6Y57-60PX

bahagian bahagian: 7564

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 57 mOhm @ 4.8A, 10V,

Senarai harapan

BUK9Y09-40B,115

Nexperia USA Inc.

BUK9Y09-40B,115

bahagian bahagian: 110626

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 25A, 10V,

Senarai harapan

BUK9Y19-55B,115

Nexperia USA Inc.

BUK9Y19-55B,115

bahagian bahagian: 184926

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 46A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 17.3 mOhm @ 20A, 10V,

Senarai harapan

BUK7215-55A,118

Nexperia USA Inc.

BUK7215-55A,118

bahagian bahagian: 184537

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 55A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 25A, 10V,

Senarai harapan

BUK9Y12-55B,115

Nexperia USA Inc.

BUK9Y12-55B,115

bahagian bahagian: 157132

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 61.8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 20A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7Y7R6-40EX

bahagian bahagian: 198211

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 79A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7.6 mOhm @ 20A, 10V,

Senarai harapan

BUK9Y7R6-40E,115

Nexperia USA Inc.

BUK9Y7R6-40E,115

bahagian bahagian: 198162

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 79A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 6 mOhm @ 20A, 10V,

Senarai harapan

BUK9222-55A,118

Nexperia USA Inc.

BUK9222-55A,118

bahagian bahagian: 158747

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 48A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 25A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7Y38-100EX

bahagian bahagian: 187451

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 5A, 10V,

Senarai harapan

BUK9Y15-60E,115

Nexperia USA Inc.

BUK9Y15-60E,115

bahagian bahagian: 145117

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 53A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 15A, 10V,

Senarai harapan

BUK9Y38-100E,115

Nexperia USA Inc.

BUK9Y38-100E,115

bahagian bahagian: 190328

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 38 mOhm @ 5A, 5V,

Senarai harapan

Nexperia USA Inc.

BUK7Y15-60EX

bahagian bahagian: 139327

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 53A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 15A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK9M7R2-40EX

bahagian bahagian: 131482

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 5.8 mOhm @ 20A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK9M5R2-30EX

bahagian bahagian: 121837

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 4.1 mOhm @ 25A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK9M12-60EX

bahagian bahagian: 142578

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 54A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 15A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK9M34-100EX

bahagian bahagian: 192080

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 29A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 5A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK9M23-80EX

bahagian bahagian: 157932

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 37A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 10A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7Y25-80EX

bahagian bahagian: 141781

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 39A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 10A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7M6R3-40EX

bahagian bahagian: 109656

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 70A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 6.3 mOhm @ 20A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7M9R9-60EX

bahagian bahagian: 183235

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 9.9 mOhm @ 15A, 10V,

Senarai harapan

Nexperia USA Inc.

BUK7M17-80EX

bahagian bahagian: 194786

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 43A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 10A, 10V,

Senarai harapan

1135

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