Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

BUK7540-100A,127

BUK7540-100A,127

bahagian bahagian: 2493

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 37A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 40A, 10V,

Senarai harapan

BUK7528-55,127

bahagian bahagian: 2449

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 20A, 10V,

Senarai harapan

BUK7514-55A,127

BUK7514-55A,127

bahagian bahagian: 2519

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 73A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 14 mOhm @ 25A, 10V,

Senarai harapan

BUK7511-55A,127

BUK7511-55A,127

bahagian bahagian: 2514

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 25A, 10V,

Senarai harapan

BUK7505-30A,127

BUK7505-30A,127

bahagian bahagian: 2450

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 5 mOhm @ 25A, 10V,

Senarai harapan

BSP304A,126

bahagian bahagian: 2480

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 300V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 170mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 17 Ohm @ 170mA, 10V,

Senarai harapan

BST72A,112

bahagian bahagian: 2477

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 190mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 10 Ohm @ 150mA, 5V,

Senarai harapan

BSN304,126

bahagian bahagian: 2446

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 300V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.4V, 10V, Rds On (Maks) @ Id, Vgs: 6 Ohm @ 250mA, 10V,

Senarai harapan

BSP254A,126

bahagian bahagian: 2510

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 15 Ohm @ 200mA, 10V,

Senarai harapan

BSN254,126

bahagian bahagian: 2444

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 310mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.4V, 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 300mA, 10V,

Senarai harapan

BSN254A,126

bahagian bahagian: 6317

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 310mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.4V, 10V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 300mA, 10V,

Senarai harapan

BS108,126

bahagian bahagian: 2512

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.8V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 100mA, 2.8V,

Senarai harapan

BS108/01,126

bahagian bahagian: 2506

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 300mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.8V, Rds On (Maks) @ Id, Vgs: 5 Ohm @ 100mA, 2.8V,

Senarai harapan

BUK98150-55,135

BUK98150-55,135

bahagian bahagian: 1923

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 5A, 5V,

Senarai harapan

BSS84AKT,115

bahagian bahagian: 1762

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 150mA (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V,

Senarai harapan

BUK7575-55,127

bahagian bahagian: 6209

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 19.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 10A, 10V,

Senarai harapan

BUK962R1-40E,118

BUK962R1-40E,118

bahagian bahagian: 1534

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1.8 mOhm @ 25A, 10V,

Senarai harapan

BUK961R7-40E,118

BUK961R7-40E,118

bahagian bahagian: 1549

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1.5 mOhm @ 25A, 10V,

Senarai harapan

BUK761R4-30E,118

BUK761R4-30E,118

bahagian bahagian: 1502

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.45 mOhm @ 25A, 10V,

Senarai harapan

BUK961R5-30E,118

BUK961R5-30E,118

bahagian bahagian: 1498

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1.3 mOhm @ 25A, 10V,

Senarai harapan

BUK9609-55A,118

BUK9609-55A,118

bahagian bahagian: 1451

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 25A, 10V,

Senarai harapan

BUK78150-55A,115

BUK78150-55A,115

bahagian bahagian: 1504

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 5A, 10V,

Senarai harapan

BUK7609-55A,118

BUK7609-55A,118

bahagian bahagian: 1521

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 25A, 10V,

Senarai harapan

BUK961R4-30E,118

BUK961R4-30E,118

bahagian bahagian: 1432

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 1.4 mOhm @ 25A, 5V,

Senarai harapan

BUK761R3-30E,118

BUK761R3-30E,118

bahagian bahagian: 1413

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.3 mOhm @ 25A, 10V,

Senarai harapan

BUK9875-100A,115

BUK9875-100A,115

bahagian bahagian: 1199

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 72 mOhm @ 8A, 10V,

Senarai harapan

BUK761R8-30C,118

BUK761R8-30C,118

bahagian bahagian: 978

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1.8 mOhm @ 25A, 10V,

Senarai harapan

BUK7619-100B,118

BUK7619-100B,118

bahagian bahagian: 6106

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 64A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 25A, 10V,

Senarai harapan

BUK7C2R2-60EJ

bahagian bahagian: 9577

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V,

Senarai harapan

BUK752R7-60E,127

BUK752R7-60E,127

bahagian bahagian: 9577

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 120A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 2.6 mOhm @ 25A, 10V,

Senarai harapan

BUK754R7-60E,127

BUK754R7-60E,127

bahagian bahagian: 9617

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 4.6 mOhm @ 25A, 10V,

Senarai harapan

BUK953R2-40E,127

BUK953R2-40E,127

bahagian bahagian: 9614

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 5V, 10V, Rds On (Maks) @ Id, Vgs: 2.8 mOhm @ 25A, 10V,

Senarai harapan

BUK7514-60E,127

BUK7514-60E,127

bahagian bahagian: 9650

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 58A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 15A, 10V,

Senarai harapan

BUK76150-55A,118

BUK76150-55A,118

bahagian bahagian: 9592

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 11A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 5A, 10V,

Senarai harapan

BUK7615-100A,118

BUK7615-100A,118

bahagian bahagian: 9575

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 25A, 10V,

Senarai harapan

BUK7608-55,118

bahagian bahagian: 9575

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 75A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 25A, 10V,

Senarai harapan

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