Transistor - Bipolar (BJT) - Tunggal, Pra Bias

PDTC123JS,126

PDTC123JS,126

bahagian bahagian: 1964

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Senarai harapan
PDTA114EEAF

PDTA114EEAF

bahagian bahagian: 1972

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Senarai harapan
PDTC114TS,126

PDTC114TS,126

bahagian bahagian: 1989

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V,

Senarai harapan
PDTC144TK,115

PDTC144TK,115

bahagian bahagian: 1921

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Senarai harapan
PBRN113EK,115

PBRN113EK,115

bahagian bahagian: 3228

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 1 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V,

Senarai harapan
PDTC143XK,115

PDTC143XK,115

bahagian bahagian: 1987

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Senarai harapan
PDTC123YE,115

PDTC123YE,115

bahagian bahagian: 1947

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V,

Senarai harapan
PDTA143ZK,115

PDTA143ZK,115

bahagian bahagian: 1977

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Senarai harapan
PDTA124XS,126

PDTA124XS,126

bahagian bahagian: 1962

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V,

Senarai harapan
PBRP113ZS,126

PBRP113ZS,126

bahagian bahagian: 1947

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms,

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PBRN123ES,126

PBRN123ES,126

bahagian bahagian: 2087

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 800mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V,

Senarai harapan
PDTA114ES,126

PDTA114ES,126

bahagian bahagian: 1924

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Senarai harapan
PDTA124XK,115

PDTA124XK,115

bahagian bahagian: 1925

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 22 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V,

Senarai harapan
PDTA144TS,126

PDTA144TS,126

bahagian bahagian: 1964

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Senarai harapan
PDTD123ES,126

PDTD123ES,126

bahagian bahagian: 1977

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V,

Senarai harapan
PDTA123EK,115

PDTA123EK,115

bahagian bahagian: 1923

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V,

Senarai harapan
PDTA114TS,126

PDTA114TS,126

bahagian bahagian: 1975

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V,

Senarai harapan
PDTC123TE,115

PDTC123TE,115

bahagian bahagian: 2001

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V,

Senarai harapan
PDTC144EK,115

PDTC144EK,115

bahagian bahagian: 1961

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V,

Senarai harapan
PDTB113ZK,115

PDTB113ZK,115

bahagian bahagian: 1964

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

Senarai harapan
PDTA144EK,135

PDTA144EK,135

bahagian bahagian: 1983

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V,

Senarai harapan
PDTA113EK,115

PDTA113EK,115

bahagian bahagian: 1943

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 1 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V,

Senarai harapan
PDTC114YS,126

PDTC114YS,126

bahagian bahagian: 1940

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V,

Senarai harapan
PDTD113ES,126

PDTD113ES,126

bahagian bahagian: 1987

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 1 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V,

Senarai harapan
PDTB113EK,115

PDTB113EK,115

bahagian bahagian: 2014

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 1 kOhms, Perintang - Pangkalan Pemancar (R2): 1 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V,

Senarai harapan
PDTC144TS,126

PDTC144TS,126

bahagian bahagian: 3219

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Senarai harapan
PDTA144WK,115

PDTA144WK,115

bahagian bahagian: 1979

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 47 kOhms, Perintang - Pangkalan Pemancar (R2): 22 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V,

Senarai harapan
PDTA123JK,115

PDTA123JK,115

bahagian bahagian: 1953

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 2.2 kOhms, Perintang - Pangkalan Pemancar (R2): 47 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Senarai harapan
PDTA114TK,115

PDTA114TK,115

bahagian bahagian: 1923

Jenis Transistor: PNP - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 10 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V,

Senarai harapan
PDTC143ES,126

PDTC143ES,126

bahagian bahagian: 1953

Jenis Transistor: NPN - Pre-Biased, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Perintang - Pangkalan (R1): 4.7 kOhms, Perintang - Pangkalan Pemancar (R2): 4.7 kOhms, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Senarai harapan