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Transistor - Bipolar (BJT) - Bujang

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  • Transistor - Bipolar (BJT) - Bujang
MJE5731G
ON Semiconductor

MJE5731G

bahagian bahagian: 64851

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 350V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 200mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V,

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FJPF5027RTU
ON Semiconductor

FJPF5027RTU

bahagian bahagian: 73294

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 800V, Ketepuan Vce (Maks) @ Ib, Ic: 2V @ 300mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V,

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FJP3305H1TU
ON Semiconductor

FJP3305H1TU

bahagian bahagian: 120090

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 1A, 4A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V,

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MBT35200MT1G
ON Semiconductor

MBT35200MT1G

bahagian bahagian: 139320

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 35V, Ketepuan Vce (Maks) @ Ib, Ic: 310mV @ 20mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V,

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FSB619
ON Semiconductor

FSB619

bahagian bahagian: 110044

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 320mV @ 50mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V,

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MJD117G
ON Semiconductor

MJD117G

bahagian bahagian: 116274

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 40mA, 4A, Semasa - Potongan Pemungut (Maksimum): 20µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V,

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MJE210G
ON Semiconductor

MJE210G

bahagian bahagian: 135695

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1.8V @ 1A, 5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V,

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TIP49
ON Semiconductor

TIP49

bahagian bahagian: 149064

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 350V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 200mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V,

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NJL0281DG
ON Semiconductor

NJL0281DG

bahagian bahagian: 619

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 260V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 500mA, 5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V,

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TIP48TU
ON Semiconductor

TIP48TU

bahagian bahagian: 107718

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 200mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V,

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MJE18004G
ON Semiconductor

MJE18004G

bahagian bahagian: 76319

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 450V, Ketepuan Vce (Maks) @ Ib, Ic: 750mV @ 500mA, 2.5A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V,

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KSH45H11ITU
ON Semiconductor

KSH45H11ITU

bahagian bahagian: 79596

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 400mA, 8A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V,

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MJE15034G
ON Semiconductor

MJE15034G

bahagian bahagian: 53158

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 350V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V,

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KSD560YTU
ON Semiconductor

KSD560YTU

bahagian bahagian: 198881

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 3mA, 3A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 5000 @ 3A, 2V,

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MJW21194G
ON Semiconductor

MJW21194G

bahagian bahagian: 17058

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 16A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 4V @ 3.2A, 16A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 8A, 5V,

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KSA940TU
ON Semiconductor

KSA940TU

bahagian bahagian: 109330

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V,

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MJE5730G
ON Semiconductor

MJE5730G

bahagian bahagian: 60116

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 200mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V,

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MJF127G
ON Semiconductor

MJF127G

bahagian bahagian: 71822

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 3.5V @ 20mA, 5A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V,

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NSV1C300ET4G-VF01
ON Semiconductor

NSV1C300ET4G-VF01

bahagian bahagian: 184012

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 300mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V,

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MMBT2222AWT1G
ON Semiconductor

MMBT2222AWT1G

bahagian bahagian: 152799

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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FJP13007TU
ON Semiconductor

FJP13007TU

bahagian bahagian: 187511

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 2A, 8A, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V,

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TIP126G
ON Semiconductor

TIP126G

bahagian bahagian: 103178

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 4V @ 20mA, 5A, Semasa - Potongan Pemungut (Maksimum): 500µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V,

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NSS20300MR6T1G
ON Semiconductor

NSS20300MR6T1G

bahagian bahagian: 152698

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 320mV @ 20mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V,

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TIP32AG
ON Semiconductor

TIP32AG

bahagian bahagian: 140853

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.2V @ 375mA, 3A, Semasa - Potongan Pemungut (Maksimum): 300µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V,

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FSB660A
ON Semiconductor

FSB660A

bahagian bahagian: 156379

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V,

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MMBT3904LT3G
ON Semiconductor

MMBT3904LT3G

bahagian bahagian: 154147

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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NJVMJD112G
ON Semiconductor

NJVMJD112G

bahagian bahagian: 160646

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 40mA, 4A, Semasa - Potongan Pemungut (Maksimum): 20µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V,

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D45H11G
ON Semiconductor

D45H11G

bahagian bahagian: 81457

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 400mA, 8A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V,

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TIP31CTU
ON Semiconductor

TIP31CTU

bahagian bahagian: 109314

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.2V @ 375mA, 3A, Semasa - Potongan Pemungut (Maksimum): 300µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V,

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MJB45H11G
ON Semiconductor

MJB45H11G

bahagian bahagian: 62657

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 400mA, 8A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V,

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KSC5021RTU
ON Semiconductor

KSC5021RTU

bahagian bahagian: 114424

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 500V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 600mA, 3A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V,

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NJW21193G
ON Semiconductor

NJW21193G

bahagian bahagian: 26256

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 16A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 4V @ 3.2A, 16A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 8A, 5V,

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MJD2955G
ON Semiconductor

MJD2955G

bahagian bahagian: 114475

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 8V @ 3.3A, 10A, Semasa - Potongan Pemungut (Maksimum): 50µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V,

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MJW21195G
ON Semiconductor

MJW21195G

bahagian bahagian: 17586

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 16A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 3.2A, 16A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 8A, 5V,

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MJW18020G
ON Semiconductor

MJW18020G

bahagian bahagian: 10336

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 30A, Voltan - Pemecahan Pemancar Pemungut (Maks): 450V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 4A, 20A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 14 @ 3A, 5V,

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NZT605
ON Semiconductor

NZT605

bahagian bahagian: 157539

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 110V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 1mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V,

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