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Transistor - Bipolar (BJT) - Bujang

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  • Transistor - Bipolar (BJT) - Bujang
SBC817-25LT1G
ON Semiconductor

SBC817-25LT1G

bahagian bahagian: 187440

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V,

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MJE703G
ON Semiconductor

MJE703G

bahagian bahagian: 111033

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 2.8V @ 40mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V,

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TIP115G
ON Semiconductor

TIP115G

bahagian bahagian: 151801

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 2.5V @ 8mA, 2A, Semasa - Potongan Pemungut (Maksimum): 2mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V,

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TIP110TU
ON Semiconductor

TIP110TU

bahagian bahagian: 90486

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 2.5V @ 8mA, 2A, Semasa - Potongan Pemungut (Maksimum): 2mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V,

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MMBT2222ALT3G
ON Semiconductor

MMBT2222ALT3G

bahagian bahagian: 136081

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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FSB649
ON Semiconductor

FSB649

bahagian bahagian: 146462

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 300mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V,

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TIP147T
ON Semiconductor

TIP147T

bahagian bahagian: 67883

Jenis Transistor: PNP - Darlington, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 40mA, 10A, Semasa - Potongan Pemungut (Maksimum): 2mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V,

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MJE5731AG
ON Semiconductor

MJE5731AG

bahagian bahagian: 64820

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 375V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 200mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V,

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TIP29
ON Semiconductor

TIP29

bahagian bahagian: 129215

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 125mA, 1A, Semasa - Potongan Pemungut (Maksimum): 300µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V,

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MJD210G
ON Semiconductor

MJD210G

bahagian bahagian: 128479

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 1.8V @ 1A, 5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V,

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NJVMJB44H11T4G
ON Semiconductor

NJVMJB44H11T4G

bahagian bahagian: 79019

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 400mA, 8A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V,

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TIP42BG
ON Semiconductor

TIP42BG

bahagian bahagian: 116245

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 6A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 600mA, 6A, Semasa - Potongan Pemungut (Maksimum): 700µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V,

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MMBT2222ALT1G
ON Semiconductor

MMBT2222ALT1G

bahagian bahagian: 104479

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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FJPF3305H1TU
ON Semiconductor

FJPF3305H1TU

bahagian bahagian: 87209

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 1A, 4A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 19 @ 1A, 5V,

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MJE200G
ON Semiconductor

MJE200G

bahagian bahagian: 135634

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1.8V @ 1A, 5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V,

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PCP1203-TD-H
ON Semiconductor

PCP1203-TD-H

bahagian bahagian: 103709

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 225mV @ 15mA, 750mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V,

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D44H8G
ON Semiconductor

D44H8G

bahagian bahagian: 81380

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 400mA, 8A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V,

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KSA733CGBU
ON Semiconductor

KSA733CGBU

bahagian bahagian: 117002

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V,

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FSB560A
ON Semiconductor

FSB560A

bahagian bahagian: 159471

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V,

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NJVMJD45H11G
ON Semiconductor

NJVMJD45H11G

bahagian bahagian: 176198

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 400mA, 8A, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V,

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MJB5742T4G
ON Semiconductor

MJB5742T4G

bahagian bahagian: 43566

Jenis Transistor: NPN - Darlington, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 3V @ 400mA, 8A, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 4A, 5V,

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MJD42CG
ON Semiconductor

MJD42CG

bahagian bahagian: 120113

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 6A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 600mA, 6A, Semasa - Potongan Pemungut (Maksimum): 50µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V,

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NJW0302G
ON Semiconductor

NJW0302G

bahagian bahagian: 33841

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 15A, Voltan - Pemecahan Pemancar Pemungut (Maks): 250V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 500mA, 5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V,

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SFT1202-TL-E
ON Semiconductor

SFT1202-TL-E

bahagian bahagian: 176025

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 165mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V,

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MJE5850G
ON Semiconductor

MJE5850G

bahagian bahagian: 25633

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 5V @ 3A, 8A, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V,

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TIP32ATU
ON Semiconductor

TIP32ATU

bahagian bahagian: 118130

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.2V @ 375mA, 3A, Semasa - Potongan Pemungut (Maksimum): 200µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V,

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TIP33CG
ON Semiconductor

TIP33CG

bahagian bahagian: 43349

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 4V @ 2.5A, 10A, Semasa - Potongan Pemungut (Maksimum): 700µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V,

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NSV40200UW6T1G
ON Semiconductor

NSV40200UW6T1G

bahagian bahagian: 183018

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 20mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V,

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MMBT3904T
ON Semiconductor

MMBT3904T

bahagian bahagian: 141505

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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MJD253-1G
ON Semiconductor

MJD253-1G

bahagian bahagian: 157963

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V,

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FJA4210OTU
ON Semiconductor

FJA4210OTU

bahagian bahagian: 51872

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 140V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 500mA, 5A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V,

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MJF15031G
ON Semiconductor

MJF15031G

bahagian bahagian: 42178

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 150V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V,

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KSD363YTU
ON Semiconductor

KSD363YTU

bahagian bahagian: 191247

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 6A, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 100mA, 1A, Semasa - Potongan Pemungut (Maksimum): 1mA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V,

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KSE45H11
ON Semiconductor

KSE45H11

bahagian bahagian: 89397

Jenis Transistor: PNP, Semasa - Pemungut (Ic) (Maks): 10A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 400mA, 8A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V,

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SBC847BWT1G
ON Semiconductor

SBC847BWT1G

bahagian bahagian: 106587

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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NJVMJD44H11G
ON Semiconductor

NJVMJD44H11G

bahagian bahagian: 174754

Jenis Transistor: NPN, Semasa - Pemungut (Ic) (Maks): 8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 400mA, 8A, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V,

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