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MSM5117400F-60TDR1L
Rohm Semiconductor

MSM5117400F-60TDR1L

bahagian bahagian: 4230

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 16Mb (4M x 4), Tulis Masa Kitaran - Perkataan, Halaman: 110ns,

Senarai harapan
MR44V064AMAZAAB
Rohm Semiconductor

MR44V064AMAZAAB

bahagian bahagian: 4585

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 3.4MHz,

Senarai harapan
MSM5118165F-60T3K-MT
Rohm Semiconductor

MSM5118165F-60T3K-MT

bahagian bahagian: 5785

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 16Mb (1M x 16),

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MSM51V18165F-60T3
Rohm Semiconductor

MSM51V18165F-60T3

bahagian bahagian: 9097

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 104ns,

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MSM5118160F-60J3-7
Rohm Semiconductor

MSM5118160F-60J3-7

bahagian bahagian: 9130

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 16Mb (1M x 16),

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MSM5117405F-60J3-7
Rohm Semiconductor

MSM5117405F-60J3-7

bahagian bahagian: 9045

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 16Mb (4M x 4),

Senarai harapan
MSM5117400F-60J3-7
Rohm Semiconductor

MSM5117400F-60J3-7

bahagian bahagian: 9041

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 16Mb (4M x 4), Tulis Masa Kitaran - Perkataan, Halaman: 110ns,

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MD51V65165E-50TAZ0AR
Rohm Semiconductor

MD51V65165E-50TAZ0AR

bahagian bahagian: 9114

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 64Mb (4M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 84ns,

Senarai harapan
MSM5118165F-60J3-7
Rohm Semiconductor

MSM5118165F-60J3-7

bahagian bahagian: 9101

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 16Mb (1M x 16),

Senarai harapan
MSM51V18165F-60J3-7
Rohm Semiconductor

MSM51V18165F-60J3-7

bahagian bahagian: 9146

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 16Mb (1M x 16), Tulis Masa Kitaran - Perkataan, Halaman: 104ns,

Senarai harapan
MR45V032AMAZBATL
Rohm Semiconductor

MR45V032AMAZBATL

bahagian bahagian: 2759

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 32Kb (4K x 8), Kekerapan Jam: 15MHz,

Senarai harapan
MSM5117405F-60T-DKX
Rohm Semiconductor

MSM5117405F-60T-DKX

bahagian bahagian: 6956

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 16Mb (4M x 4),

Senarai harapan
MSM5118160F-60T3K-MT
Rohm Semiconductor

MSM5118160F-60T3K-MT

bahagian bahagian: 7416

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 16Mb (1M x 16),

Senarai harapan
MSM5117400F-60T3-K-7
Rohm Semiconductor

MSM5117400F-60T3-K-7

bahagian bahagian: 7945

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 16Mb (4M x 4), Tulis Masa Kitaran - Perkataan, Halaman: 110ns,

Senarai harapan
MSM51V17400F-60TDKX
Rohm Semiconductor

MSM51V17400F-60TDKX

bahagian bahagian: 9193

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 16Mb (4M x 4), Tulis Masa Kitaran - Perkataan, Halaman: 110ns,

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MSM5412222B-25TK-MTL
Rohm Semiconductor

MSM5412222B-25TK-MTL

bahagian bahagian: 9000

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 3Mb (256K x 12), Tulis Masa Kitaran - Perkataan, Halaman: 25ns,

Senarai harapan
MSM51V18160F-60T3-K7
Rohm Semiconductor

MSM51V18160F-60T3-K7

bahagian bahagian: 8322

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 16Mb (1M x 16),

Senarai harapan
MR48V256ATAZBARL
Rohm Semiconductor

MR48V256ATAZBARL

bahagian bahagian: 12577

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Tulis Masa Kitaran - Perkataan, Halaman: 150ns,

Senarai harapan
MSM51V17405F-60T3-K
Rohm Semiconductor

MSM51V17405F-60T3-K

bahagian bahagian: 10649

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: DRAM, Saiz Ingatan: 16Mb (4M x 4), Tulis Masa Kitaran - Perkataan, Halaman: 104ns,

Senarai harapan
MR45V256AMAZAAT-L
Rohm Semiconductor

MR45V256AMAZAAT-L

bahagian bahagian: 18207

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 256Kb (32K x 8), Kekerapan Jam: 15MHz,

Senarai harapan
MR44V100AMAZAATL
Rohm Semiconductor

MR44V100AMAZAATL

bahagian bahagian: 219

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 1Mb (128K x 8), Kekerapan Jam: 3.4MHz,

Senarai harapan
MR45V100AMAZAATL
Rohm Semiconductor

MR45V100AMAZAATL

bahagian bahagian: 214

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 1Mb (128K x 8), Kekerapan Jam: 40MHz,

Senarai harapan
MD56V62160M-7TAZ0AX
Rohm Semiconductor

MD56V62160M-7TAZ0AX

bahagian bahagian: 16646

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: SDRAM, Saiz Ingatan: 64Mb (4M x 16), Kekerapan Jam: 143MHz, Tulis Masa Kitaran - Perkataan, Halaman: 7ns,

Senarai harapan
MSM56V16160K8T3K
Rohm Semiconductor

MSM56V16160K8T3K

bahagian bahagian: 2745

Jenis Ingatan: Volatile, Format Memori: DRAM, Teknologi: SDRAM, Saiz Ingatan: 16Mb (512K x 16 x 2), Kekerapan Jam: 125MHz, Tulis Masa Kitaran - Perkataan, Halaman: 70ns,

Senarai harapan
MR44V064BMAZAATL
Rohm Semiconductor

MR44V064BMAZAATL

bahagian bahagian: 10765

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 3.4MHz,

Senarai harapan
MR45V064BMAZAATL
Rohm Semiconductor

MR45V064BMAZAATL

bahagian bahagian: 167

Jenis Ingatan: Non-Volatile, Format Memori: FRAM, Teknologi: FRAM (Ferroelectric RAM), Saiz Ingatan: 64Kb (8K x 8), Kekerapan Jam: 40MHz,

Senarai harapan