Transistor - FET, MOSFET - Susunan

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Transistor - FET, MOSFET - Susunan

Rohm Semiconductor

EM6K33T2R

bahagian bahagian: 182538

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.2V Drive, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

SP8M4FRATB

bahagian bahagian: 91

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Ta), 7A (Ta), Rds On (Maks) @ Id, Vgs: 18 mOhm @ 9A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8K31FRATB

bahagian bahagian: 99

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A (Ta), Rds On (Maks) @ Id, Vgs: 120 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QS6K1TR

bahagian bahagian: 117098

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A, Rds On (Maks) @ Id, Vgs: 238 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

QS8J4TR

bahagian bahagian: 171717

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 56 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8K3TB

bahagian bahagian: 123516

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SH8KA4TB

bahagian bahagian: 198737

Jenis FET: 2 N-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 21.4 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8J2FU6TB

bahagian bahagian: 120135

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 56 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SM6K2T110

bahagian bahagian: 120997

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

UT6J3TCR

bahagian bahagian: 114339

Jenis FET: 2 P-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

UT6K3TCR

bahagian bahagian: 167007

Jenis FET: 2 N-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

US6M11TR

bahagian bahagian: 108081

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, 1.3A, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

SH8K3TB1

bahagian bahagian: 55153

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

UT6JA2TCR

bahagian bahagian: 157843

Jenis FET: 2 P-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SH8J65TB1

bahagian bahagian: 100136

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

UM6K33NTN

bahagian bahagian: 191317

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.2V Drive, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

US6J2TR

bahagian bahagian: 151598

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1A, Rds On (Maks) @ Id, Vgs: 390 mOhm @ 1A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 1mA,

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Rohm Semiconductor

TT8J1TR

bahagian bahagian: 2958

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 61 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

SH8K1TB1

bahagian bahagian: 189574

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

UT6MA3TCR

bahagian bahagian: 168810

Jenis FET: N and P-Channel, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, 5.5A, Rds On (Maks) @ Id, Vgs: 59 mOhm @ 5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

US6K4TR

bahagian bahagian: 182371

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

QS8M51TR

bahagian bahagian: 132178

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, 1.5A, Rds On (Maks) @ Id, Vgs: 325 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

HP8K22TB

bahagian bahagian: 139519

Jenis FET: 2 N-Channel (Half Bridge), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 27A, 57A, Rds On (Maks) @ Id, Vgs: 4.6 mOhm @ 20A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8J5FU6TB

bahagian bahagian: 68274

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SH8K32TB1

bahagian bahagian: 109582

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

UM6K31NFHATCN

bahagian bahagian: 9908

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA (Ta), Rds On (Maks) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 1mA,

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Rohm Semiconductor

SH8M5TB1

bahagian bahagian: 102075

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 7A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8M3FU6TB

bahagian bahagian: 134363

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, 4.5A, Rds On (Maks) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

MP6K13TCR

bahagian bahagian: 2950

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 31 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QS6M4TR

bahagian bahagian: 185861

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

SH8M3TB1

bahagian bahagian: 180841

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, 4.5A, Rds On (Maks) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SH8M41TB1

bahagian bahagian: 127833

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, 2.6A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QH8KA4TCR

bahagian bahagian: 78816

Jenis FET: 2 N-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 17 mOhm @ 7A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

TT8J21TR

bahagian bahagian: 169061

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.5A, Rds On (Maks) @ Id, Vgs: 68 mOhm @ 2.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

SH8J66TB1

bahagian bahagian: 75609

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, Rds On (Maks) @ Id, Vgs: 18.5 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

MP6M11TCR

bahagian bahagian: 2920

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 98 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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