Transistor - FET, MOSFET - Susunan | Produk Semikonduktor Diskrit | 5

SP8M2FU6TB

bahagian bahagian: 156997

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 83 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

MP6K31TR

bahagian bahagian: 2806

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 290 mOhm @ 2A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8M5FU6TB

bahagian bahagian: 3289

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 7A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8M8TB

bahagian bahagian: 3276

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, 4.5A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

MP6M12TCR

bahagian bahagian: 2901

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8J1TB

bahagian bahagian: 2724

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8K22FU6TB

bahagian bahagian: 115178

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

VT6K1T2CR

bahagian bahagian: 166434

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 1.2V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA, Rds On (Maks) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 100µA,

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Rohm Semiconductor

SP8M70TB1

bahagian bahagian: 89658

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2.5A, Rds On (Maks) @ Id, Vgs: 1.63 Ohm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

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Rohm Semiconductor

QS8K51TR

bahagian bahagian: 139893

Jenis FET: 2 N-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A,

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Rohm Semiconductor

QH8MA3TCR

bahagian bahagian: 185267

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, 5.5A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SH8K12TB1

bahagian bahagian: 185191

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

UM6K34NTCN

bahagian bahagian: 167601

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 0.9V Drive, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 800mV @ 1mA,

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Rohm Semiconductor

SH8M24TB1

bahagian bahagian: 112720

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, 3.5A, Rds On (Maks) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

UM6J1NTN

bahagian bahagian: 145064

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 200mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QS8J13TR

bahagian bahagian: 157844

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 5.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

SH8M11TB1

bahagian bahagian: 138257

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 98 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

EM6K34T2CR

bahagian bahagian: 122186

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 0.9V Drive, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Maks) @ Id: 800mV @ 1mA,

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Rohm Semiconductor

QS6J11TR

bahagian bahagian: 168987

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 2A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

EM6K7T2R

bahagian bahagian: 107116

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

QS8K2TR

bahagian bahagian: 107158

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 54 mOhm @ 3.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

QS6J3TR

bahagian bahagian: 190781

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A, Rds On (Maks) @ Id, Vgs: 215 mOhm @ 1.5A, 4.5V, Vgs (th) (Maks) @ Id: 2V @ 1mA,

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Rohm Semiconductor

UM6K31NTN

bahagian bahagian: 169406

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Maks) @ Id: 2.3V @ 1mA,

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Rohm Semiconductor

SP8J66TB1

bahagian bahagian: 59328

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A,

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Rohm Semiconductor

SH8M2TB1

bahagian bahagian: 104614

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 83 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QH8KA2TCR

bahagian bahagian: 115998

Jenis FET: 2 N-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, Rds On (Maks) @ Id, Vgs: 73 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QS8J5TR

bahagian bahagian: 118611

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5A, Rds On (Maks) @ Id, Vgs: 39 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QS8J2TR

bahagian bahagian: 191347

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, 1.5V Drive, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 36 mOhm @ 4A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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Rohm Semiconductor

SH8K41GZETB

bahagian bahagian: 108314

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 3.4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QS8K13TCR

bahagian bahagian: 183897

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8K31TB1

bahagian bahagian: 132551

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 120 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SH8KA2GZETB

bahagian bahagian: 158789

Jenis FET: 2 N-Channel (Dual), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 8A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SH8K5TB1

bahagian bahagian: 122471

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.5A, Rds On (Maks) @ Id, Vgs: 83 mOhm @ 3.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QS8K21TR

bahagian bahagian: 194558

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 45V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

QS8M12TCR

bahagian bahagian: 150953

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 4A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SH8M14TB1

bahagian bahagian: 116026

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, 7A, Rds On (Maks) @ Id, Vgs: 21 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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