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Diod - Zener - Bujang

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  • Diod - Zener - Bujang
TSZU52C6V2 RGG
Taiwan Semiconductor Corporation

TSZU52C6V2 RGG

bahagian bahagian: 210

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C30 RGG
Taiwan Semiconductor Corporation

TSZU52C30 RGG

bahagian bahagian: 157

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 23V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C4V3 RGG
Taiwan Semiconductor Corporation

TSZU52C4V3 RGG

bahagian bahagian: 162

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C6V8 RGG
Taiwan Semiconductor Corporation

TSZU52C6V8 RGG

bahagian bahagian: 167

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C5V6 RGG
Taiwan Semiconductor Corporation

TSZU52C5V6 RGG

bahagian bahagian: 158

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C8V2 RGG
Taiwan Semiconductor Corporation

TSZU52C8V2 RGG

bahagian bahagian: 208

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 6V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C10 RGG
Taiwan Semiconductor Corporation

TSZU52C10 RGG

bahagian bahagian: 145

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C2V2 RGG
Taiwan Semiconductor Corporation

TSZU52C2V2 RGG

bahagian bahagian: 188

Voltan - Zener (Nom) (Vz): 2.2V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C20 RGG
Taiwan Semiconductor Corporation

TSZU52C20 RGG

bahagian bahagian: 216

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C11 RGG
Taiwan Semiconductor Corporation

TSZU52C11 RGG

bahagian bahagian: 182

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C33 RGG
Taiwan Semiconductor Corporation

TSZU52C33 RGG

bahagian bahagian: 160

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 25V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C2V0 RGG
Taiwan Semiconductor Corporation

TSZU52C2V0 RGG

bahagian bahagian: 171

Voltan - Zener (Nom) (Vz): 2V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C2V4 RGG
Taiwan Semiconductor Corporation

TSZU52C2V4 RGG

bahagian bahagian: 199

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C24 RGG
Taiwan Semiconductor Corporation

TSZU52C24 RGG

bahagian bahagian: 158

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C3V6 RGG
Taiwan Semiconductor Corporation

TSZU52C3V6 RGG

bahagian bahagian: 189

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 15µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C36 RGG
Taiwan Semiconductor Corporation

TSZU52C36 RGG

bahagian bahagian: 173

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C7V5 RGG
Taiwan Semiconductor Corporation

TSZU52C7V5 RGG

bahagian bahagian: 175

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C39 RGG
Taiwan Semiconductor Corporation

TSZU52C39 RGG

bahagian bahagian: 171

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 29V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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MMSZ5234B RHG
Taiwan Semiconductor Corporation

MMSZ5234B RHG

bahagian bahagian: 240

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 4V,

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MTZJ11SC R0G
Taiwan Semiconductor Corporation

MTZJ11SC R0G

bahagian bahagian: 154

Voltan - Zener (Nom) (Vz): 11.1V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 8V,

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ZM4749A L0G
Taiwan Semiconductor Corporation

ZM4749A L0G

bahagian bahagian: 166

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 18.2V,

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TSZL52C30 RWG
Taiwan Semiconductor Corporation

TSZL52C30 RWG

bahagian bahagian: 155

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 23V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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MTZJ3V3SB R0G
Taiwan Semiconductor Corporation

MTZJ3V3SB R0G

bahagian bahagian: 249

Voltan - Zener (Nom) (Vz): 3.43V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 120 Ohms, Semasa - Kebocoran Terbalik @ Vr: 20µA @ 1V,

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ZM4733A L0G
Taiwan Semiconductor Corporation

ZM4733A L0G

bahagian bahagian: 210

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V,

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UDZS3V6B RRG
Taiwan Semiconductor Corporation

UDZS3V6B RRG

bahagian bahagian: 189

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 4.5µA @ 1V,

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MTZJ5V1SA R0G
Taiwan Semiconductor Corporation

MTZJ5V1SA R0G

bahagian bahagian: 244

Voltan - Zener (Nom) (Vz): 4.94V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1.5V,

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MTZJ2V2SB R0G
Taiwan Semiconductor Corporation

MTZJ2V2SB R0G

bahagian bahagian: 240

Voltan - Zener (Nom) (Vz): 2.32V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 120µA @ 700mV,

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MTZJ15SC R0G
Taiwan Semiconductor Corporation

MTZJ15SC R0G

bahagian bahagian: 177

Voltan - Zener (Nom) (Vz): 14.72V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 11V,

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MMSZ5262B RHG
Taiwan Semiconductor Corporation

MMSZ5262B RHG

bahagian bahagian: 183

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 125 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 39V,

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MTZJ39SB R0G
Taiwan Semiconductor Corporation

MTZJ39SB R0G

bahagian bahagian: 187

Voltan - Zener (Nom) (Vz): 36.28V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 30V,

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TSZL52C2V4 RWG
Taiwan Semiconductor Corporation

TSZL52C2V4 RWG

bahagian bahagian: 169

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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MMSZ5225B RHG
Taiwan Semiconductor Corporation

MMSZ5225B RHG

bahagian bahagian: 210

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 29 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V,

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MTZJ3V0SA R0G
Taiwan Semiconductor Corporation

MTZJ3V0SA R0G

bahagian bahagian: 235

Voltan - Zener (Nom) (Vz): 2.96V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 120 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V,

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MTZJ9V1SB R0G
Taiwan Semiconductor Corporation

MTZJ9V1SB R0G

bahagian bahagian: 210

Voltan - Zener (Nom) (Vz): 8.79V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 6V,

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MTZJ39SD R0G
Taiwan Semiconductor Corporation

MTZJ39SD R0G

bahagian bahagian: 167

Voltan - Zener (Nom) (Vz): 37.58V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 30V,

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MTZJ11SB R0G
Taiwan Semiconductor Corporation

MTZJ11SB R0G

bahagian bahagian: 200

Voltan - Zener (Nom) (Vz): 10.78V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 8V,

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