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Diod - Zener - Bujang

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  • Diod - Zener - Bujang
BZD27C9V1P M2G
Taiwan Semiconductor Corporation

BZD27C9V1P M2G

bahagian bahagian: 5291

Voltan - Zener (Nom) (Vz): 9.05V, Toleransi: ±6.07%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 4 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZT52C18S RRG
Taiwan Semiconductor Corporation

BZT52C18S RRG

bahagian bahagian: 25808

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 12.6V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B7V5 RHG
Taiwan Semiconductor Corporation

BZT52B7V5 RHG

bahagian bahagian: 25844

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 900nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZD27C24P RVG
Taiwan Semiconductor Corporation

BZD27C24P RVG

bahagian bahagian: 25808

Voltan - Zener (Nom) (Vz): 24.2V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 18V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZT52C16S RRG
Taiwan Semiconductor Corporation

BZT52C16S RRG

bahagian bahagian: 25829

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 11.2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52C12S RRG
Taiwan Semiconductor Corporation

BZT52C12S RRG

bahagian bahagian: 25828

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 90nA @ 8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B27 RHG
Taiwan Semiconductor Corporation

BZT52B27 RHG

bahagian bahagian: 25837

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 18.9V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B10 RHG
Taiwan Semiconductor Corporation

BZT52B10 RHG

bahagian bahagian: 32303

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 180nA @ 7V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B18 RHG
Taiwan Semiconductor Corporation

BZT52B18 RHG

bahagian bahagian: 45243

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 12.6V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZT52B3V9 RHG
Taiwan Semiconductor Corporation

BZT52B3V9 RHG

bahagian bahagian: 51625

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2.7µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10mA,

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BZD27C9V1PHR3G
Taiwan Semiconductor Corporation

BZD27C9V1PHR3G

bahagian bahagian: 4135

Voltan - Zener (Nom) (Vz): 9.05V, Toleransi: ±6.07%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 4 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C8V2PHR3G
Taiwan Semiconductor Corporation

BZD27C8V2PHR3G

bahagian bahagian: 4107

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±6.09%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 2 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C10PHR3G
Taiwan Semiconductor Corporation

BZD27C10PHR3G

bahagian bahagian: 4095

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±6%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 4 Ohms, Semasa - Kebocoran Terbalik @ Vr: 7µA @ 7.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C6V8PHR3G
Taiwan Semiconductor Corporation

BZD27C6V8PHR3G

bahagian bahagian: 4070

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5.88%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 3 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C7V5PHR3G
Taiwan Semiconductor Corporation

BZD27C7V5PHR3G

bahagian bahagian: 4099

Voltan - Zener (Nom) (Vz): 7.45V, Toleransi: ±6.04%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 2 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C9V1PHRQG
Taiwan Semiconductor Corporation

BZD27C9V1PHRQG

bahagian bahagian: 4123

Voltan - Zener (Nom) (Vz): 9.05V, Toleransi: ±6.07%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 4 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C6V8PHRQG
Taiwan Semiconductor Corporation

BZD27C6V8PHRQG

bahagian bahagian: 4098

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5.88%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 3 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C8V2PHRQG
Taiwan Semiconductor Corporation

BZD27C8V2PHRQG

bahagian bahagian: 4094

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±6.09%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 2 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C7V5PHRQG
Taiwan Semiconductor Corporation

BZD27C7V5PHRQG

bahagian bahagian: 4113

Voltan - Zener (Nom) (Vz): 7.45V, Toleransi: ±6.04%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 2 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C10PHRQG
Taiwan Semiconductor Corporation

BZD27C10PHRQG

bahagian bahagian: 4070

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±6%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 4 Ohms, Semasa - Kebocoran Terbalik @ Vr: 7µA @ 7.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZD27C6V8PHRUG
Taiwan Semiconductor Corporation

BZD27C6V8PHRUG

bahagian bahagian: 4052

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5.88%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 3 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 3V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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UDZS8V2B RRG
Taiwan Semiconductor Corporation

UDZS8V2B RRG

bahagian bahagian: 111

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 630nA @ 5V,

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TSZU52C13 RGG
Taiwan Semiconductor Corporation

TSZU52C13 RGG

bahagian bahagian: 155

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C5V1 RGG
Taiwan Semiconductor Corporation

TSZU52C5V1 RGG

bahagian bahagian: 181

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 800mV, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C2V7 RGG
Taiwan Semiconductor Corporation

TSZU52C2V7 RGG

bahagian bahagian: 167

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 83 Ohms, Semasa - Kebocoran Terbalik @ Vr: 75µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C4V7 RGG
Taiwan Semiconductor Corporation

TSZU52C4V7 RGG

bahagian bahagian: 185

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 78 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C16 RGG
Taiwan Semiconductor Corporation

TSZU52C16 RGG

bahagian bahagian: 222

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C3V9 RGG
Taiwan Semiconductor Corporation

TSZU52C3V9 RGG

bahagian bahagian: 190

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C12 RGG
Taiwan Semiconductor Corporation

TSZU52C12 RGG

bahagian bahagian: 182

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 9V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C15 RGG
Taiwan Semiconductor Corporation

TSZU52C15 RGG

bahagian bahagian: 191

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C3V3 RGG
Taiwan Semiconductor Corporation

TSZU52C3V3 RGG

bahagian bahagian: 228

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 25µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C9V1 RGG
Taiwan Semiconductor Corporation

TSZU52C9V1 RGG

bahagian bahagian: 150

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C18 RGG
Taiwan Semiconductor Corporation

TSZU52C18 RGG

bahagian bahagian: 160

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 14V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C22 RGG
Taiwan Semiconductor Corporation

TSZU52C22 RGG

bahagian bahagian: 213

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 17V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C27 RGG
Taiwan Semiconductor Corporation

TSZU52C27 RGG

bahagian bahagian: 179

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 20V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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TSZU52C3V0 RGG
Taiwan Semiconductor Corporation

TSZU52C3V0 RGG

bahagian bahagian: 206

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 150mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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