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Diod - Zener - Bujang

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  • Diod - Zener - Bujang
UDZS6V2B RRG
Taiwan Semiconductor Corporation

UDZS6V2B RRG

bahagian bahagian: 196

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2.7µA @ 3V,

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MTZJ16SC R0G
Taiwan Semiconductor Corporation

MTZJ16SC R0G

bahagian bahagian: 169

Voltan - Zener (Nom) (Vz): 16.1V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 12V,

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ZM4740A L0G
Taiwan Semiconductor Corporation

ZM4740A L0G

bahagian bahagian: 241

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 7.6V,

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MMSZ5258B RHG
Taiwan Semiconductor Corporation

MMSZ5258B RHG

bahagian bahagian: 181

Voltan - Zener (Nom) (Vz): 36V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 27V,

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MTZJ10SB R0G
Taiwan Semiconductor Corporation

MTZJ10SB R0G

bahagian bahagian: 208

Voltan - Zener (Nom) (Vz): 9.66V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 7V,

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MTZJ9V1SA R0G
Taiwan Semiconductor Corporation

MTZJ9V1SA R0G

bahagian bahagian: 174

Voltan - Zener (Nom) (Vz): 8.51V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 6V,

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MTZJ24SB R0G
Taiwan Semiconductor Corporation

MTZJ24SB R0G

bahagian bahagian: 193

Voltan - Zener (Nom) (Vz): 23.19V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 19V,

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MTZJ7V5SA R0G
Taiwan Semiconductor Corporation

MTZJ7V5SA R0G

bahagian bahagian: 158

Voltan - Zener (Nom) (Vz): 7.04V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 4V,

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UDZS30B RRG
Taiwan Semiconductor Corporation

UDZS30B RRG

bahagian bahagian: 232

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 45nA @ 23V,

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UDZS4V7B RRG
Taiwan Semiconductor Corporation

UDZS4V7B RRG

bahagian bahagian: 258

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2.7µA @ 1V,

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ZM4744A L0G
Taiwan Semiconductor Corporation

ZM4744A L0G

bahagian bahagian: 183

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 14 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 11.4V,

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ZM4748A L0G
Taiwan Semiconductor Corporation

ZM4748A L0G

bahagian bahagian: 154

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 23 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 16.7V,

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MTZJ22SB R0G
Taiwan Semiconductor Corporation

MTZJ22SB R0G

bahagian bahagian: 216

Voltan - Zener (Nom) (Vz): 21.18V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 17V,

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MMSZ5235B RHG
Taiwan Semiconductor Corporation

MMSZ5235B RHG

bahagian bahagian: 236

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 5V,

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UDZS5V1B RRG
Taiwan Semiconductor Corporation

UDZS5V1B RRG

bahagian bahagian: 200

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1.8µA @ 2V,

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MMSZ5254B RHG
Taiwan Semiconductor Corporation

MMSZ5254B RHG

bahagian bahagian: 257

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 41 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 21V,

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MMSZ5261B RHG
Taiwan Semiconductor Corporation

MMSZ5261B RHG

bahagian bahagian: 187

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 105 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 36V,

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MTZJ12SA R0G
Taiwan Semiconductor Corporation

MTZJ12SA R0G

bahagian bahagian: 179

Voltan - Zener (Nom) (Vz): 11.42V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 9V,

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ZM4756A L0G
Taiwan Semiconductor Corporation

ZM4756A L0G

bahagian bahagian: 252

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 35.8V,

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UDZS12B RRG
Taiwan Semiconductor Corporation

UDZS12B RRG

bahagian bahagian: 251

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 90nA @ 9V,

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MTZJ3V0SB R0G
Taiwan Semiconductor Corporation

MTZJ3V0SB R0G

bahagian bahagian: 163

Voltan - Zener (Nom) (Vz): 3.12V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 120 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V,

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MTZJ5V6SC R0G
Taiwan Semiconductor Corporation

MTZJ5V6SC R0G

bahagian bahagian: 203

Voltan - Zener (Nom) (Vz): 5.76V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 2.5V,

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ZM4734A L0G
Taiwan Semiconductor Corporation

ZM4734A L0G

bahagian bahagian: 238

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 1W, Impedans (Maks) (Zzt): 5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 2V,

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MTZJ39SF R0G
Taiwan Semiconductor Corporation

MTZJ39SF R0G

bahagian bahagian: 216

Voltan - Zener (Nom) (Vz): 39.13V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 30V,

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MTZJ4V3SC R0G
Taiwan Semiconductor Corporation

MTZJ4V3SC R0G

bahagian bahagian: 248

Voltan - Zener (Nom) (Vz): 4.44V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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MTZJ27SB R0G
Taiwan Semiconductor Corporation

MTZJ27SB R0G

bahagian bahagian: 203

Voltan - Zener (Nom) (Vz): 25.62V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 21V,

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MTZJ39SA R0G
Taiwan Semiconductor Corporation

MTZJ39SA R0G

bahagian bahagian: 206

Voltan - Zener (Nom) (Vz): 35.58V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 30V,

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MTZJ16SA R0G
Taiwan Semiconductor Corporation

MTZJ16SA R0G

bahagian bahagian: 165

Voltan - Zener (Nom) (Vz): 15.19V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 12V,

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MTZJ8V2SB R0G
Taiwan Semiconductor Corporation

MTZJ8V2SB R0G

bahagian bahagian: 175

Voltan - Zener (Nom) (Vz): 7.99V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 5V,

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MTZJ33SC R0G
Taiwan Semiconductor Corporation

MTZJ33SC R0G

bahagian bahagian: 182

Voltan - Zener (Nom) (Vz): 31.7V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 65 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 25V,

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MTZJ3V6SB R0G
Taiwan Semiconductor Corporation

MTZJ3V6SB R0G

bahagian bahagian: 176

Voltan - Zener (Nom) (Vz): 3.72V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 100 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V,

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MTZJ4V7SA R0G
Taiwan Semiconductor Corporation

MTZJ4V7SA R0G

bahagian bahagian: 206

Voltan - Zener (Nom) (Vz): 4.56V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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MTZJ18SC R0G
Taiwan Semiconductor Corporation

MTZJ18SC R0G

bahagian bahagian: 183

Voltan - Zener (Nom) (Vz): 17.88V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 13V,

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MTZJ36SD R0G
Taiwan Semiconductor Corporation

MTZJ36SD R0G

bahagian bahagian: 246

Voltan - Zener (Nom) (Vz): 34.89V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 75 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 27V,

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MMSZ5250B RHG
Taiwan Semiconductor Corporation

MMSZ5250B RHG

bahagian bahagian: 181

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V,

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TSZL52C3V0 RWG
Taiwan Semiconductor Corporation

TSZL52C3V0 RWG

bahagian bahagian: 205

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10mA,

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