Transistor - FET, MOSFET - Bujang

Rumah
Transistor - FET, MOSFET - Bujang

SIA436DJ-T1-GE3

Vishay Siliconix

SIA436DJ-T1-GE3

bahagian bahagian: 119071

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 9.4 mOhm @ 15.7A, 4.5V,

Senarai harapan

Vishay Siliconix

SI6415DQ-T1-E3

bahagian bahagian: 101835

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 6.5A, 10V,

Senarai harapan

SIRA01DP-T1-GE3

Vishay Siliconix

SIRA01DP-T1-GE3

bahagian bahagian: 9909

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 26A (Ta), 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.9 mOhm @ 15A, 10V,

Senarai harapan

SQJ407EP-T1_GE3

Vishay Siliconix

SQJ407EP-T1_GE3

bahagian bahagian: 134372

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 4.4 mOhm @ 10A, 10V,

Senarai harapan

SIB408DK-T1-GE3

Vishay Siliconix

SIB408DK-T1-GE3

bahagian bahagian: 127930

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 6A, 10V,

Senarai harapan

SI5468DC-T1-GE3

Vishay Siliconix

SI5468DC-T1-GE3

bahagian bahagian: 193145

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6.8A, 10V,

Senarai harapan

Vishay Siliconix

IRL530PBF

bahagian bahagian: 51245

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 15A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4V, 5V, Rds On (Maks) @ Id, Vgs: 160 mOhm @ 9A, 5V,

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Vishay Siliconix

IRFU9214PBF

bahagian bahagian: 98690

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 250V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 3 Ohm @ 1.7A, 10V,

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SISH106DN-T1-GE3

Vishay Siliconix

SISH106DN-T1-GE3

bahagian bahagian: 9993

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 6.2 mOhm @ 19.5A, 4.5V,

Senarai harapan

SIS439DNT-T1-GE3

Vishay Siliconix

SIS439DNT-T1-GE3

bahagian bahagian: 185636

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 14A, 10V,

Senarai harapan

SIR158DP-T1-RE3

Vishay Siliconix

SIR158DP-T1-RE3

bahagian bahagian: 9977

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.8 mOhm @ 20A, 10V,

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Vishay Siliconix

SI8457DB-T1-E1

bahagian bahagian: 116255

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 3A, 4.5V,

Senarai harapan

SQ3418EEV-T1-GE3

Vishay Siliconix

SQ3418EEV-T1-GE3

bahagian bahagian: 1167

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 32 mOhm @ 5A, 10V,

Senarai harapan

SI5429DU-T1-GE3

Vishay Siliconix

SI5429DU-T1-GE3

bahagian bahagian: 1399

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 15 mOhm @ 7A, 10V,

Senarai harapan

SI7430DP-T1-GE3

Vishay Siliconix

SI7430DP-T1-GE3

bahagian bahagian: 61511

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 26A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 8V, 10V, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5A, 10V,

Senarai harapan

SI5855CDC-T1-E3

Vishay Siliconix

SI5855CDC-T1-E3

bahagian bahagian: 130824

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V,

Senarai harapan

SI7868ADP-T1-E3

Vishay Siliconix

SI7868ADP-T1-E3

bahagian bahagian: 30942

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.25 mOhm @ 20A, 10V,

Senarai harapan

SIRA10DP-T1-GE3

Vishay Siliconix

SIRA10DP-T1-GE3

bahagian bahagian: 158534

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.7 mOhm @ 10A, 10V,

Senarai harapan

SQJA68EP-T1_GE3

Vishay Siliconix

SQJA68EP-T1_GE3

bahagian bahagian: 9941

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 92 mOhm @ 4A, 10V,

Senarai harapan

SQ2360EES-T1-GE3

Vishay Siliconix

SQ2360EES-T1-GE3

bahagian bahagian: 1242

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 6A, 10V,

Senarai harapan

SI1403BDL-T1-GE3

Vishay Siliconix

SI1403BDL-T1-GE3

bahagian bahagian: 9957

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V,

Senarai harapan

Vishay Siliconix

SI7309DN-T1-E3

bahagian bahagian: 158562

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 115 mOhm @ 3.9A, 10V,

Senarai harapan

IRFR1N60ATRLPBF

Vishay Siliconix

IRFR1N60ATRLPBF

bahagian bahagian: 98672

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 7 Ohm @ 840mA, 10V,

Senarai harapan

Vishay Siliconix

SIHD9N60E-GE3

bahagian bahagian: 78467

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 368 mOhm @ 4.5A, 10V,

Senarai harapan

SIS452DN-T1-GE3

Vishay Siliconix

SIS452DN-T1-GE3

bahagian bahagian: 125881

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 35A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.25 mOhm @ 20A, 10V,

Senarai harapan

SQ1420EEH-T1-GE3

Vishay Siliconix

SQ1420EEH-T1-GE3

bahagian bahagian: 1196

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 140 mOhm @ 1.2A, 10V,

Senarai harapan

SIRA26DP-T1-RE3

Vishay Siliconix

SIRA26DP-T1-RE3

bahagian bahagian: 9924

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 25V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.65 mOhm @ 15A, 10V,

Senarai harapan

SI2374DS-T1-GE3

Vishay Siliconix

SI2374DS-T1-GE3

bahagian bahagian: 137862

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), 5.9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 4A, 4.5V,

Senarai harapan

SIRC18DP-T1-GE3

Vishay Siliconix

SIRC18DP-T1-GE3

bahagian bahagian: 9922

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 1.1 mOhm @ 15A, 10V,

Senarai harapan

Vishay Siliconix

SI1499DH-T1-E3

bahagian bahagian: 153359

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.2V, 4.5V, Rds On (Maks) @ Id, Vgs: 78 mOhm @ 2A, 4.5V,

Senarai harapan

Vishay Siliconix

SI7113DN-T1-E3

bahagian bahagian: 52520

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13.2A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 134 mOhm @ 4A, 10V,

Senarai harapan

SIRC10DP-T1-GE3

Vishay Siliconix

SIRC10DP-T1-GE3

bahagian bahagian: 188404

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 mOhm @ 10A, 10V,

Senarai harapan

SIR616DP-T1-GE3

Vishay Siliconix

SIR616DP-T1-GE3

bahagian bahagian: 111187

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20.2A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 7.5V, 10V, Rds On (Maks) @ Id, Vgs: 50.5 mOhm @ 10A, 10V,

Senarai harapan

SI7106DN-T1-GE3

Vishay Siliconix

SI7106DN-T1-GE3

bahagian bahagian: 141992

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 6.2 mOhm @ 19.5A, 4.5V,

Senarai harapan

SISA04DN-T1-GE3

Vishay Siliconix

SISA04DN-T1-GE3

bahagian bahagian: 132149

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 40A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.15 mOhm @ 15A, 10V,

Senarai harapan

SQ3426EEV-T1-GE3

Vishay Siliconix

SQ3426EEV-T1-GE3

bahagian bahagian: 1231

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 42 mOhm @ 5A, 10V,

Senarai harapan

3600

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