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Transistor - FET, MOSFET - Bujang

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  • Transistor - FET, MOSFET - Bujang
SI4486EY-T1-GE3
Vishay Siliconix

SI4486EY-T1-GE3

bahagian bahagian: 1024

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.4A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 25 mOhm @ 7.9A, 10V,

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SUP40N10-30-GE3
Vishay Siliconix

SUP40N10-30-GE3

bahagian bahagian: 1103

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 38.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 15A, 10V,

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SIE800DF-T1-GE3
Vishay Siliconix

SIE800DF-T1-GE3

bahagian bahagian: 1135

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 7.2 mOhm @ 11A, 10V,

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SI7186DP-T1-E3
Vishay Siliconix

SI7186DP-T1-E3

bahagian bahagian: 1034

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 32A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 12.5 mOhm @ 10A, 10V,

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SI3493DV-T1-GE3
Vishay Siliconix

SI3493DV-T1-GE3

bahagian bahagian: 1034

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 27 mOhm @ 7A, 4.5V,

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SI5461EDC-T1-GE3
Vishay Siliconix

SI5461EDC-T1-GE3

bahagian bahagian: 1072

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 5A, 4.5V,

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SI3483DV-T1-GE3
Vishay Siliconix

SI3483DV-T1-GE3

bahagian bahagian: 1052

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 6.2A, 10V,

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SI5449DC-T1-E3
Vishay Siliconix

SI5449DC-T1-E3

bahagian bahagian: 1089

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V,

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SI5449DC-T1-GE3
Vishay Siliconix

SI5449DC-T1-GE3

bahagian bahagian: 1085

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V,

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SIA406DJ-T1-GE3
Vishay Siliconix

SIA406DJ-T1-GE3

bahagian bahagian: 163663

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 19.8 mOhm @ 10.8A, 4.5V,

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SI3456CDV-T1-E3
Vishay Siliconix

SI3456CDV-T1-E3

bahagian bahagian: 1028

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.7A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 6.1A, 10V,

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SIS414DN-T1-GE3
Vishay Siliconix

SIS414DN-T1-GE3

bahagian bahagian: 128723

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 10A, 4.5V,

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SI5402BDC-T1-GE3
Vishay Siliconix

SI5402BDC-T1-GE3

bahagian bahagian: 1007

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.9A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 35 mOhm @ 4.9A, 10V,

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SIE836DF-T1-GE3
Vishay Siliconix

SIE836DF-T1-GE3

bahagian bahagian: 1015

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 130 mOhm @ 4.1A, 10V,

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SUP85N04-03-E3
Vishay Siliconix

SUP85N04-03-E3

bahagian bahagian: 1118

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 85A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 3.5 mOhm @ 30A, 10V,

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SI1405BDH-T1-GE3
Vishay Siliconix

SI1405BDH-T1-GE3

bahagian bahagian: 6167

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 112 mOhm @ 2.8A, 4.5V,

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SI1400DL-T1-GE3
Vishay Siliconix

SI1400DL-T1-GE3

bahagian bahagian: 171269

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.6A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V,

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SI4322DY-T1-GE3
Vishay Siliconix

SI4322DY-T1-GE3

bahagian bahagian: 1024

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 18A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.5 mOhm @ 15A, 10V,

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IRF730ASTRRPBF
Vishay Siliconix

IRF730ASTRRPBF

bahagian bahagian: 1048

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 400V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 1 Ohm @ 3.3A, 10V,

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IRFR9020PBF
Vishay Siliconix

IRFR9020PBF

bahagian bahagian: 42366

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9.9A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 280 mOhm @ 5.7A, 10V,

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SI4409DY-T1-GE3
Vishay Siliconix

SI4409DY-T1-GE3

bahagian bahagian: 6141

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.3A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 6V, 10V, Rds On (Maks) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V,

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SI2343DS-T1
Vishay Siliconix

SI2343DS-T1

bahagian bahagian: 930

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 53 mOhm @ 4A, 10V,

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SI1402DH-T1-GE3
Vishay Siliconix

SI1402DH-T1-GE3

bahagian bahagian: 999

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.7A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 77 mOhm @ 3A, 4.5V,

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IRF9630PBF
Vishay Siliconix

IRF9630PBF

bahagian bahagian: 56850

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 200V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 10V, Rds On (Maks) @ Id, Vgs: 800 mOhm @ 3.9A, 10V,

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SI1406DH-T1-GE3
Vishay Siliconix

SI1406DH-T1-GE3

bahagian bahagian: 941

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.1A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 65 mOhm @ 3.9A, 4.5V,

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SI4448DY-T1-GE3
Vishay Siliconix

SI4448DY-T1-GE3

bahagian bahagian: 1038

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 50A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 1.7 mOhm @ 20A, 4.5V,

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SI4438DY-T1-E3
Vishay Siliconix

SI4438DY-T1-E3

bahagian bahagian: 1088

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 36A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 2.7 mOhm @ 20A, 10V,

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SI7196DP-T1-E3
Vishay Siliconix

SI7196DP-T1-E3

bahagian bahagian: 1059

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 11 mOhm @ 12A, 10V,

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SI7404DN-T1-GE3
Vishay Siliconix

SI7404DN-T1-GE3

bahagian bahagian: 1114

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8.5A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 13 mOhm @ 13.3A, 10V,

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SI4190DY-T1-GE3
Vishay Siliconix

SI4190DY-T1-GE3

bahagian bahagian: 1020

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 20A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 8.8 mOhm @ 15A, 10V,

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SI4884BDY-T1-GE3
Vishay Siliconix

SI4884BDY-T1-GE3

bahagian bahagian: 83639

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 16.5A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 10A, 10V,

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SI6413DQ-T1-E3
Vishay Siliconix

SI6413DQ-T1-E3

bahagian bahagian: 1051

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 1.8V, 4.5V, Rds On (Maks) @ Id, Vgs: 10 mOhm @ 8.8A, 4.5V,

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SI5913DC-T1-E3
Vishay Siliconix

SI5913DC-T1-E3

bahagian bahagian: 184019

Jenis FET: P-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 10V, Rds On (Maks) @ Id, Vgs: 84 mOhm @ 3.7A, 10V,

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SI5440DC-T1-GE3
Vishay Siliconix

SI5440DC-T1-GE3

bahagian bahagian: 183838

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 19 mOhm @ 9.1A, 10V,

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SI3812DV-T1-GE3
Vishay Siliconix

SI3812DV-T1-GE3

bahagian bahagian: 1030

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A (Ta), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 2.5V, 4.5V, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V,

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SUD50N03-09P-GE3
Vishay Siliconix

SUD50N03-09P-GE3

bahagian bahagian: 98662

Jenis FET: N-Channel, Teknologi: MOSFET (Metal Oxide), Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 63A (Tc), Voltan Pandu (Maksimum Rds Hidup, Min Rds Hidup): 4.5V, 10V, Rds On (Maks) @ Id, Vgs: 9.5 mOhm @ 20A, 10V,

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