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Diod - Zener - Bujang

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BZT52C2V4-E3-08
Vishay Semiconductor Diodes Division

BZT52C2V4-E3-08

bahagian bahagian: 162503

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 85 Ohms,

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BZX384B8V2-HE3-08
Vishay Semiconductor Diodes Division

BZX384B8V2-HE3-08

bahagian bahagian: 185381

Voltan - Zener (Nom) (Vz): 8.2V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 700nA @ 5V,

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BZT52B75-E3-08
Vishay Semiconductor Diodes Division

BZT52B75-E3-08

bahagian bahagian: 187842

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 250 Ohms,

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BZX384B7V5-E3-08
Vishay Semiconductor Diodes Division

BZX384B7V5-E3-08

bahagian bahagian: 180912

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 1V,

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BZX84C33-E3-08
Vishay Semiconductor Diodes Division

BZX84C33-E3-08

bahagian bahagian: 164519

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 23.1V,

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BZT52B20-E3-08
Vishay Semiconductor Diodes Division

BZT52B20-E3-08

bahagian bahagian: 101514

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V,

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BZT52C7V5-E3-08
Vishay Semiconductor Diodes Division

BZT52C7V5-E3-08

bahagian bahagian: 199660

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V,

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BZX84C39-E3-08
Vishay Semiconductor Diodes Division

BZX84C39-E3-08

bahagian bahagian: 191499

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 130 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 27.3V,

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BZX84B4V3-E3-08
Vishay Semiconductor Diodes Division

BZX84B4V3-E3-08

bahagian bahagian: 172873

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V,

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BZX384C9V1-HE3-08
Vishay Semiconductor Diodes Division

BZX384C9V1-HE3-08

bahagian bahagian: 176809

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 6V,

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BZT52C20-E3-08
Vishay Semiconductor Diodes Division

BZT52C20-E3-08

bahagian bahagian: 164394

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V,

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BZT52C6V8-HE3-08
Vishay Semiconductor Diodes Division

BZT52C6V8-HE3-08

bahagian bahagian: 159883

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V,

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BZX384C5V6-HE3-08
Vishay Semiconductor Diodes Division

BZX384C5V6-HE3-08

bahagian bahagian: 186811

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V,

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BZT52B18-HE3-08
Vishay Semiconductor Diodes Division

BZT52B18-HE3-08

bahagian bahagian: 151475

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 18 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 14V,

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BZX384B3V6-G3-08
Vishay Semiconductor Diodes Division

BZX384B3V6-G3-08

bahagian bahagian: 131014

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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BZT52B6V8-E3-08
Vishay Semiconductor Diodes Division

BZT52B6V8-E3-08

bahagian bahagian: 189756

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V,

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BZT52C4V7-HE3-08
Vishay Semiconductor Diodes Division

BZT52C4V7-HE3-08

bahagian bahagian: 142305

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms,

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BZT52C6V8-E3-08
Vishay Semiconductor Diodes Division

BZT52C6V8-E3-08

bahagian bahagian: 190911

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 3V,

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BZX384C30-E3-08
Vishay Semiconductor Diodes Division

BZX384C30-E3-08

bahagian bahagian: 144056

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 21V,

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BZT52B7V5-HE3-08
Vishay Semiconductor Diodes Division

BZT52B7V5-HE3-08

bahagian bahagian: 173876

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V,

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BZT52B11-E3-08
Vishay Semiconductor Diodes Division

BZT52B11-E3-08

bahagian bahagian: 144457

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 6 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8.5V,

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BZX84C18-G3-08
Vishay Semiconductor Diodes Division

BZX84C18-G3-08

bahagian bahagian: 154049

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 12.6V,

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BZX84B6V2-E3-08
Vishay Semiconductor Diodes Division

BZX84B6V2-E3-08

bahagian bahagian: 131210

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 4V,

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BZX84C3V6-HE3-08
Vishay Semiconductor Diodes Division

BZX84C3V6-HE3-08

bahagian bahagian: 144868

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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BZX384B6V2-HE3-08
Vishay Semiconductor Diodes Division

BZX384B6V2-HE3-08

bahagian bahagian: 185117

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 4V,

Senarai harapan
BZM55B16-TR
Vishay Semiconductor Diodes Division

BZM55B16-TR

bahagian bahagian: 138581

Voltan - Zener (Nom) (Vz): 16V, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 170 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZM55C30-TR
Vishay Semiconductor Diodes Division

BZM55C30-TR

bahagian bahagian: 112951

Voltan - Zener (Nom) (Vz): 30V, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 220 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZM55C33-TR
Vishay Semiconductor Diodes Division

BZM55C33-TR

bahagian bahagian: 189271

Voltan - Zener (Nom) (Vz): 33V, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 220 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 24V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZT55C4V7-GS08
Vishay Semiconductor Diodes Division

BZT55C4V7-GS08

bahagian bahagian: 157411

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZM55B39-TR
Vishay Semiconductor Diodes Division

BZM55B39-TR

bahagian bahagian: 165254

Voltan - Zener (Nom) (Vz): 39V, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 500 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 30V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZT55C18-GS08
Vishay Semiconductor Diodes Division

BZT55C18-GS08

bahagian bahagian: 170897

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 13V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

Senarai harapan
BZT55C7V5-GS08
Vishay Semiconductor Diodes Division

BZT55C7V5-GS08

bahagian bahagian: 154740

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZM55B7V5-TR
Vishay Semiconductor Diodes Division

BZM55B7V5-TR

bahagian bahagian: 190953

Voltan - Zener (Nom) (Vz): 7.5V, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZM55B33-TR
Vishay Semiconductor Diodes Division

BZM55B33-TR

bahagian bahagian: 118054

Voltan - Zener (Nom) (Vz): 33V, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 220 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 24V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

Senarai harapan
BZM55B56-TR
Vishay Semiconductor Diodes Division

BZM55B56-TR

bahagian bahagian: 124965

Voltan - Zener (Nom) (Vz): 56V, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 1000 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100µA @ 43V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZT55C15-GS08
Vishay Semiconductor Diodes Division

BZT55C15-GS08

bahagian bahagian: 150973

Voltan - Zener (Nom) (Vz): 15V, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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