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Diod - Zener - Bujang

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BZT52B5V6-E3-08
Vishay Semiconductor Diodes Division

BZT52B5V6-E3-08

bahagian bahagian: 133335

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V,

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BZT52C43-E3-08
Vishay Semiconductor Diodes Division

BZT52C43-E3-08

bahagian bahagian: 141321

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 32V,

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BZX384B16-HE3-08
Vishay Semiconductor Diodes Division

BZX384B16-HE3-08

bahagian bahagian: 126613

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 11.2V,

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BZX85C11-TR
Vishay Semiconductor Diodes Division

BZX85C11-TR

bahagian bahagian: 183056

Voltan - Zener (Nom) (Vz): 11V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 7.5V,

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BZX85B15-TR
Vishay Semiconductor Diodes Division

BZX85B15-TR

bahagian bahagian: 32269

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±2%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 11V,

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BZX85C10-TAP
Vishay Semiconductor Diodes Division

BZX85C10-TAP

bahagian bahagian: 188019

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 7.5V,

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BZT52C16-E3-08
Vishay Semiconductor Diodes Division

BZT52C16-E3-08

bahagian bahagian: 103666

Voltan - Zener (Nom) (Vz): 16V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 13 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 12V,

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BZD27C24P-E3-08
Vishay Semiconductor Diodes Division

BZD27C24P-E3-08

bahagian bahagian: 141982

Voltan - Zener (Nom) (Vz): 24V, Kuasa - Maks: 800mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 18V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 200mA,

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BZX84C18-E3-08
Vishay Semiconductor Diodes Division

BZX84C18-E3-08

bahagian bahagian: 157259

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 45 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 12.6V,

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BZT52C18-E3-08
Vishay Semiconductor Diodes Division

BZT52C18-E3-08

bahagian bahagian: 166731

Voltan - Zener (Nom) (Vz): 18V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 18 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 14V,

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BZX55C9V1-TAP
Vishay Semiconductor Diodes Division

BZX55C9V1-TAP

bahagian bahagian: 101192

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 6.8V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZX85B5V1-TR
Vishay Semiconductor Diodes Division

BZX85B5V1-TR

bahagian bahagian: 134656

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 1.5V,

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BZX55B2V4-TAP
Vishay Semiconductor Diodes Division

BZX55B2V4-TAP

bahagian bahagian: 170438

Voltan - Zener (Nom) (Vz): 2.4V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 85 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50µA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZX85B100-TR
Vishay Semiconductor Diodes Division

BZX85B100-TR

bahagian bahagian: 144347

Voltan - Zener (Nom) (Vz): 100V, Toleransi: ±2%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 350 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 75V,

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BZX85C6V8-TR
Vishay Semiconductor Diodes Division

BZX85C6V8-TR

bahagian bahagian: 160500

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 3.5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 4V,

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BZX85C6V8-TAP
Vishay Semiconductor Diodes Division

BZX85C6V8-TAP

bahagian bahagian: 132147

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 3.5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 4V,

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BZX55B56-TAP
Vishay Semiconductor Diodes Division

BZX55B56-TAP

bahagian bahagian: 141285

Voltan - Zener (Nom) (Vz): 56V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 135 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 43V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZX55C15-TR
Vishay Semiconductor Diodes Division

BZX55C15-TR

bahagian bahagian: 154551

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 11V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZX55B6V2-TR
Vishay Semiconductor Diodes Division

BZX55B6V2-TR

bahagian bahagian: 132542

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZX55B7V5-TAP
Vishay Semiconductor Diodes Division

BZX55B7V5-TAP

bahagian bahagian: 169796

Voltan - Zener (Nom) (Vz): 7.5V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZX85C39-TAP
Vishay Semiconductor Diodes Division

BZX85C39-TAP

bahagian bahagian: 179578

Voltan - Zener (Nom) (Vz): 39V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 30V,

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BZX55B10-TR
Vishay Semiconductor Diodes Division

BZX55B10-TR

bahagian bahagian: 190860

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7.5V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZX55B75-TAP
Vishay Semiconductor Diodes Division

BZX55B75-TAP

bahagian bahagian: 176825

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 250 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 56V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZX85C15-TAP
Vishay Semiconductor Diodes Division

BZX85C15-TAP

bahagian bahagian: 115315

Voltan - Zener (Nom) (Vz): 15V, Toleransi: ±6%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 11V,

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BZX85C4V3-TAP
Vishay Semiconductor Diodes Division

BZX85C4V3-TAP

bahagian bahagian: 183392

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 13 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V,

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BZX85B10-TAP
Vishay Semiconductor Diodes Division

BZX85B10-TAP

bahagian bahagian: 183056

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 7.5V,

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BZX55C13-TR
Vishay Semiconductor Diodes Division

BZX55C13-TR

bahagian bahagian: 151316

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 26 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZX55B13-TAP
Vishay Semiconductor Diodes Division

BZX55B13-TAP

bahagian bahagian: 107674

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 26 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 10V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZX85C47-TAP
Vishay Semiconductor Diodes Division

BZX85C47-TAP

bahagian bahagian: 155187

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 36V,

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BZX55B5V6-TAP
Vishay Semiconductor Diodes Division

BZX55B5V6-TAP

bahagian bahagian: 143111

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZX55B5V6-TR
Vishay Semiconductor Diodes Division

BZX55B5V6-TR

bahagian bahagian: 187744

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±2%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZX85C3V6-TAP
Vishay Semiconductor Diodes Division

BZX85C3V6-TAP

bahagian bahagian: 181209

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 20µA @ 1V,

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BZX85C5V6-TAP
Vishay Semiconductor Diodes Division

BZX85C5V6-TAP

bahagian bahagian: 148005

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 2V,

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BZX55C75-TAP
Vishay Semiconductor Diodes Division

BZX55C75-TAP

bahagian bahagian: 160343

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 250 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 56V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 200mA,

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BZX85B6V8-TR
Vishay Semiconductor Diodes Division

BZX85B6V8-TR

bahagian bahagian: 165958

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 3.5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 4V,

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BZX85B9V1-TR
Vishay Semiconductor Diodes Division

BZX85B9V1-TR

bahagian bahagian: 143718

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±2%, Kuasa - Maks: 1.3W, Impedans (Maks) (Zzt): 5 Ohms, Semasa - Kebocoran Terbalik @ Vr: 1µA @ 6.8V,

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