Diod - Zener - Bujang | Produk Semikonduktor Diskrit | 100

BZT52C12-HE3-08

bahagian bahagian: 151158

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 7 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 9V,

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Vishay Semiconductor Diodes Division

BZX384C27-E3-08

bahagian bahagian: 131614

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 18.9V,

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Vishay Semiconductor Diodes Division

BZX384B3V9-E3-08

bahagian bahagian: 131158

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX84C4V7-HE3-08

bahagian bahagian: 149480

Voltan - Zener (Nom) (Vz): 4.7V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 80 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52C4V3-E3-08

bahagian bahagian: 109854

Voltan - Zener (Nom) (Vz): 4.3V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZX84C13-E3-08

bahagian bahagian: 152670

Voltan - Zener (Nom) (Vz): 13V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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Vishay Semiconductor Diodes Division

BZT52C47-E3-08

bahagian bahagian: 146968

Voltan - Zener (Nom) (Vz): 47V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 35V,

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Vishay Semiconductor Diodes Division

BZX384B10-G3-08

bahagian bahagian: 189675

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 20 Ohms, Semasa - Kebocoran Terbalik @ Vr: 200nA @ 7V,

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Vishay Semiconductor Diodes Division

BZX384B6V8-E3-08

bahagian bahagian: 161035

Voltan - Zener (Nom) (Vz): 6.8V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 4V,

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Vishay Semiconductor Diodes Division

BZT52B6V2-E3-08

bahagian bahagian: 134386

Voltan - Zener (Nom) (Vz): 6.2V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 4.8 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 2V,

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Vishay Semiconductor Diodes Division

BZX84C3V0-E3-08

bahagian bahagian: 151267

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX384B3V6-E3-08

bahagian bahagian: 156876

Voltan - Zener (Nom) (Vz): 3.6V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52C5V6-HE3-08

bahagian bahagian: 150962

Voltan - Zener (Nom) (Vz): 5.6V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 10 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52B20-G3-08

bahagian bahagian: 133502

Voltan - Zener (Nom) (Vz): 20V, Toleransi: ±5%, Kuasa - Maks: 500mW, Impedans (Maks) (Zzt): 50 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 15V,

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Vishay Semiconductor Diodes Division

BZX84B5V1-E3-08

bahagian bahagian: 151738

Voltan - Zener (Nom) (Vz): 5.1V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 60 Ohms, Semasa - Kebocoran Terbalik @ Vr: 2µA @ 2V,

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Vishay Semiconductor Diodes Division

BZT52C51-E3-08

bahagian bahagian: 189744

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 38V,

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Vishay Semiconductor Diodes Division

BZX84C3V9-HE3-08

bahagian bahagian: 131058

Voltan - Zener (Nom) (Vz): 3.9V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 90 Ohms, Semasa - Kebocoran Terbalik @ Vr: 3µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52B3V3-G3-08

bahagian bahagian: 136268

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B30-E3-08

bahagian bahagian: 148981

Voltan - Zener (Nom) (Vz): 30V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 35 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 22.5V,

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Vishay Semiconductor Diodes Division

BZX84C43-E3-08

bahagian bahagian: 143503

Voltan - Zener (Nom) (Vz): 43V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 150 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 30.1V,

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Vishay Semiconductor Diodes Division

BZT52B33-HE3-08

bahagian bahagian: 160257

Voltan - Zener (Nom) (Vz): 33V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 40 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 25V,

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Vishay Semiconductor Diodes Division

BZT52C24-E3-08

bahagian bahagian: 180171

Voltan - Zener (Nom) (Vz): 24V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 28 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 18V,

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Vishay Semiconductor Diodes Division

BZT52B2V7-E3-08

bahagian bahagian: 188834

Voltan - Zener (Nom) (Vz): 2.7V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 75 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B3V0-E3-08

bahagian bahagian: 112445

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 10µA @ 1V,

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Vishay Semiconductor Diodes Division

BZT52C27-E3-08

bahagian bahagian: 194143

Voltan - Zener (Nom) (Vz): 27V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 30 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 20V,

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Vishay Semiconductor Diodes Division

BZX384B9V1-E3-08

bahagian bahagian: 141247

Voltan - Zener (Nom) (Vz): 9.1V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 15 Ohms, Semasa - Kebocoran Terbalik @ Vr: 500nA @ 6V,

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Vishay Semiconductor Diodes Division

BZX84B24-E3-08

bahagian bahagian: 157097

Voltan - Zener (Nom) (Vz): 23.5V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 70 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 16.8V,

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Vishay Semiconductor Diodes Division

BZX84B75-E3-08

bahagian bahagian: 141915

Voltan - Zener (Nom) (Vz): 75V, Toleransi: ±2%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 255 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 52.5V,

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Vishay Semiconductor Diodes Division

BZX84C22-E3-08

bahagian bahagian: 123566

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 55 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 15.4V,

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Vishay Semiconductor Diodes Division

BZT52B22-E3-08

bahagian bahagian: 104278

Voltan - Zener (Nom) (Vz): 22V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 17V,

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Vishay Semiconductor Diodes Division

BZT52C3V3-G3-08

bahagian bahagian: 177705

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZT52B10-HE3-08

bahagian bahagian: 137151

Voltan - Zener (Nom) (Vz): 10V, Toleransi: ±2%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 5.2 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 7.5V,

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Vishay Semiconductor Diodes Division

BZX84C3V3-HE3-08

bahagian bahagian: 180926

Voltan - Zener (Nom) (Vz): 3.3V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 95 Ohms, Semasa - Kebocoran Terbalik @ Vr: 5µA @ 1V,

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Vishay Semiconductor Diodes Division

BZX84C51-E3-08

bahagian bahagian: 150669

Voltan - Zener (Nom) (Vz): 51V, Toleransi: ±5%, Kuasa - Maks: 300mW, Impedans (Maks) (Zzt): 180 Ohms, Semasa - Kebocoran Terbalik @ Vr: 50nA @ 35.7V,

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Vishay Semiconductor Diodes Division

BZT52C3V0-E3-08

bahagian bahagian: 145432

Voltan - Zener (Nom) (Vz): 3V, Toleransi: ±5%, Kuasa - Maks: 410mW, Impedans (Maks) (Zzt): 80 Ohms,

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Vishay Semiconductor Diodes Division

BZX384B12-E3-08

bahagian bahagian: 160452

Voltan - Zener (Nom) (Vz): 12V, Toleransi: ±2%, Kuasa - Maks: 200mW, Impedans (Maks) (Zzt): 25 Ohms, Semasa - Kebocoran Terbalik @ Vr: 100nA @ 8V,

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