Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 100

AS4PJHM3/87A

bahagian bahagian: 1562

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 2.4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 962mV @ 2A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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Vishay Semiconductor Diodes Division

AS4PGHM3/86A

bahagian bahagian: 1550

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 2.4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 962mV @ 2A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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Vishay Semiconductor Diodes Division

AS4PGHM3/87A

bahagian bahagian: 1549

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 2.4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 962mV @ 2A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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Vishay Semiconductor Diodes Division

AS4PDHM3/86A

bahagian bahagian: 5590

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2.4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 962mV @ 2A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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Vishay Semiconductor Diodes Division

AS4PDHM3/87A

bahagian bahagian: 1533

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2.4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 962mV @ 2A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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Vishay Semiconductor Diodes Division

AS3PMHM3/86A

bahagian bahagian: 1514

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 2.1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

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Vishay Semiconductor Diodes Division

AS3PMHM3/87A

bahagian bahagian: 1551

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 2.1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

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Vishay Semiconductor Diodes Division

AS3PKHM3/87A

bahagian bahagian: 1516

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 2.1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

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Vishay Semiconductor Diodes Division

AS3PKHM3/86A

bahagian bahagian: 1523

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 2.1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

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Vishay Semiconductor Diodes Division

AS3PJHM3/86A

bahagian bahagian: 1557

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 2.1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

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Vishay Semiconductor Diodes Division

AS3PGHM3/87A

bahagian bahagian: 1579

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 2.1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

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Vishay Semiconductor Diodes Division

AS3PDHM3/87A

bahagian bahagian: 1491

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2.1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

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Vishay Semiconductor Diodes Division

AS3PGHM3/86A

bahagian bahagian: 1574

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 2.1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

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Vishay Semiconductor Diodes Division

AR4PMHM3/86A

bahagian bahagian: 1534

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

AR4PKHM3/87A

bahagian bahagian: 1551

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

AR4PKHM3/86A

bahagian bahagian: 1589

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

AR4PJHM3/87A

bahagian bahagian: 1584

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AR4PJHM3/86A

bahagian bahagian: 1577

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AR4PGHM3/87A

bahagian bahagian: 1522

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AR4PGHM3/86A

bahagian bahagian: 1556

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AR4PDHM3/87A

bahagian bahagian: 1503

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AR4PDHM3/86A

bahagian bahagian: 1498

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AR3PMHM3/86A

bahagian bahagian: 1495

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

AR3PMHM3/87A

bahagian bahagian: 1521

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

AR3PKHM3/86A

bahagian bahagian: 1530

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

AR3PKHM3/87A

bahagian bahagian: 1564

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

AR3PJHM3/86A

bahagian bahagian: 1498

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AR3PJHM3/87A

bahagian bahagian: 1583

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AR3PGHM3/87A

bahagian bahagian: 1539

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AR3PGHM3/86A

bahagian bahagian: 1529

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AR3PDHM3/87A

bahagian bahagian: 1556

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AR3PDHM3/86A

bahagian bahagian: 1542

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

AU2PKHM3/87A

bahagian bahagian: 1229

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.5V @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

AS3PDHM3/86A

bahagian bahagian: 1215

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2.1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

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Vishay Semiconductor Diodes Division

AR4PMHM3/87A

bahagian bahagian: 1252

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.8A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

AS3PJHM3/87A

bahagian bahagian: 5198

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 2.1A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.2µs,

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