Diod - Pembetulan - Bujang

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Diod - Pembetulan - Bujang

Vishay Semiconductor Diodes Division

BYT51G-TR

bahagian bahagian: 108131

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BY203-16STAP

bahagian bahagian: 136970

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io): 250mA (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.4V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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Vishay Semiconductor Diodes Division

BY203-20STR

bahagian bahagian: 118044

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 2000V, Semasa - Rata-rata Disahkan (Io): 250mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.4V @ 200mA, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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Vishay Semiconductor Diodes Division

BYT54B-TR

bahagian bahagian: 167643

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1.25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

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Vishay Semiconductor Diodes Division

BYT54G-TAP

bahagian bahagian: 143810

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

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Vishay Semiconductor Diodes Division

BYT51K-TAP

bahagian bahagian: 146683

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYW33-TR

bahagian bahagian: 150277

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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Vishay Semiconductor Diodes Division

BYV16-TAP

bahagian bahagian: 117767

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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Vishay Semiconductor Diodes Division

BYV15-TAP

bahagian bahagian: 146909

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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Vishay Semiconductor Diodes Division

BYX85TR

bahagian bahagian: 166400

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYT54J-TAP

bahagian bahagian: 131415

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

Senarai harapan

Vishay Semiconductor Diodes Division

BYT54K-TAP

bahagian bahagian: 128469

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

Senarai harapan

Vishay Semiconductor Diodes Division

BYX86TR

bahagian bahagian: 169144

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

Senarai harapan

Vishay Semiconductor Diodes Division

BYW34-TAP

bahagian bahagian: 116076

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

Senarai harapan

Vishay Semiconductor Diodes Division

BYW33-TAP

bahagian bahagian: 105440

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

Senarai harapan

Vishay Semiconductor Diodes Division

BYT51K-TR

bahagian bahagian: 182442

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

Senarai harapan

Vishay Semiconductor Diodes Division

BYV16-TR

bahagian bahagian: 179220

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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Vishay Semiconductor Diodes Division

BYV37-TAP

bahagian bahagian: 150638

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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Vishay Semiconductor Diodes Division

BYT54B-TAP

bahagian bahagian: 199187

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1.25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

Senarai harapan

Vishay Semiconductor Diodes Division

BYT54G-TR

bahagian bahagian: 134763

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

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Vishay Semiconductor Diodes Division

BYV14-TR

bahagian bahagian: 153828

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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Vishay Semiconductor Diodes Division

BYT52D-TAP

bahagian bahagian: 150232

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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Vishay Semiconductor Diodes Division

BYT53G-TR

bahagian bahagian: 132124

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1.9A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BYX85TAP

bahagian bahagian: 142054

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

Senarai harapan

Vishay Semiconductor Diodes Division

BYT53D-TAP

bahagian bahagian: 196848

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.9A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BYW32-TAP

bahagian bahagian: 187387

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

Senarai harapan

Vishay Semiconductor Diodes Division

BYT52K-TAP

bahagian bahagian: 163520

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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Vishay Semiconductor Diodes Division

BYT54A-TAP

bahagian bahagian: 169667

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1.25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

Senarai harapan

Vishay Semiconductor Diodes Division

BYT53A-TR

bahagian bahagian: 125422

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1.9A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

Senarai harapan

Vishay Semiconductor Diodes Division

BYT54A-TR

bahagian bahagian: 135093

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1.25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

Senarai harapan

Vishay Semiconductor Diodes Division

BYW52-TAP

bahagian bahagian: 182850

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

Senarai harapan

Vishay Semiconductor Diodes Division

BYV27-050-TAP

bahagian bahagian: 172017

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 55V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.07V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

Senarai harapan

Vishay Semiconductor Diodes Division

BYT54D-TAP

bahagian bahagian: 111860

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.25A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 100ns,

Senarai harapan

Vishay Semiconductor Diodes Division

BYW55-TR

bahagian bahagian: 170956

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 4µs,

Senarai harapan

Vishay Semiconductor Diodes Division

BYW35-TAP

bahagian bahagian: 181459

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 500V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

Senarai harapan

Vishay Semiconductor Diodes Division

BYT52K-TR

bahagian bahagian: 162625

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1.4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

Senarai harapan

3600

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