Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 100

B150-M3/61T

bahagian bahagian: 146576

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B340A-E3/5AT

bahagian bahagian: 179738

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B160-M3/5AT

bahagian bahagian: 198807

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYD13MGPHE3/54

bahagian bahagian: 151865

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BYD33DGPHE3/54

bahagian bahagian: 111574

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

BYD33KGPHE3/73

bahagian bahagian: 100743

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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Vishay Semiconductor Diodes Division

BYD33MGPHE3/73

bahagian bahagian: 150825

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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Vishay Semiconductor Diodes Division

BYD33GGPHE3/54

bahagian bahagian: 150441

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

BY254P-E3/54

bahagian bahagian: 113295

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BA158-E3/53

bahagian bahagian: 131525

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

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Vishay Semiconductor Diodes Division

BY254P-E3/73

bahagian bahagian: 106897

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BY253P-E3/73

bahagian bahagian: 193532

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BY251P-E3/73

bahagian bahagian: 142725

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 3A, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BA157-E3/73

bahagian bahagian: 170661

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

BYM13-50HE3/96

bahagian bahagian: 128991

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM13-30HE3/97

bahagian bahagian: 146176

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM13-50HE3/97

bahagian bahagian: 168676

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM13-60-E3/97

bahagian bahagian: 136379

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM13-40HE3/96

bahagian bahagian: 170907

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM13-40HE3/97

bahagian bahagian: 140125

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM13-60HE3/97

bahagian bahagian: 125572

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM13-20HE3/97

bahagian bahagian: 141934

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM13-30-E3/97

bahagian bahagian: 100876

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM13-20-E3/97

bahagian bahagian: 154490

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM13-30HE3/96

bahagian bahagian: 166125

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM13-50-E3/97

bahagian bahagian: 156154

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM13-60HE3/96

bahagian bahagian: 127965

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM13-20HE3/96

bahagian bahagian: 155574

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYD33MGPHE3/54

bahagian bahagian: 197699

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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Vishay Semiconductor Diodes Division

BYD13DGPHE3/73

bahagian bahagian: 116969

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYD33KGPHE3/54

bahagian bahagian: 173482

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 300ns,

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Vishay Semiconductor Diodes Division

BYG21M/54

bahagian bahagian: 137388

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

BY133GPHE3/73

bahagian bahagian: 151609

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1300V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 2A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

BYD33JGPHE3/54

bahagian bahagian: 149538

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 250ns,

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Vishay Semiconductor Diodes Division

BY127MGPHE3/73

bahagian bahagian: 147814

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1250V, Semasa - Rata-rata Disahkan (Io): 1.75A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

BYT52B-TR

bahagian bahagian: 174165

Jenis Diod: Avalanche, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1.4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 200ns,

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