Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 100

BYD13JGPHE3/54

bahagian bahagian: 137355

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYD33GGPHE3/73

bahagian bahagian: 151087

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

BYD33DGPHE3/73

bahagian bahagian: 184874

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1A, Kepantasan: Small Signal =< 200mA (Io), Any Speed, Masa Pemulihan Berbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

BYD13GGPHE3/54

bahagian bahagian: 190156

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B350B-M3/52T

bahagian bahagian: 139244

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B350B-M3/5BT

bahagian bahagian: 197970

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B360B-M3/5BT

bahagian bahagian: 136964

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B350B-E3/5BT

bahagian bahagian: 155454

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B340LB-M3/5BT

bahagian bahagian: 117139

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B340LB-M3/52T

bahagian bahagian: 100390

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B340LB-E3/5BT

bahagian bahagian: 166310

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 450mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B360B-M3/52T

bahagian bahagian: 112521

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B350B-E3/52T

bahagian bahagian: 138727

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BY133GPHE3/54

bahagian bahagian: 172848

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1300V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 2A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

BY227MGPHE3/54

bahagian bahagian: 106867

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1250V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

BYD13JGPHE3/73

bahagian bahagian: 171332

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BYD13DGPHE3/54

bahagian bahagian: 182970

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYD13MGPHE3/73

bahagian bahagian: 173344

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BYD13KGPHE3/73

bahagian bahagian: 133090

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BYM10-400/1

bahagian bahagian: 169666

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM10-1000/1

bahagian bahagian: 121583

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYS12-90-E3/TR3

bahagian bahagian: 114313

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B330LA-M3/5AT

bahagian bahagian: 157528

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYS12-90HE3_A/H

bahagian bahagian: 116

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B360A-E3/5AT

bahagian bahagian: 170108

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B120-E3/5AT

bahagian bahagian: 168339

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 520mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYS11-90-E3/TR

bahagian bahagian: 105664

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B150-E3/5AT

bahagian bahagian: 183918

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B330LA-E3/5AT

bahagian bahagian: 125346

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B330LA-M3/61T

bahagian bahagian: 123661

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B230LA-M3/5AT

bahagian bahagian: 181769

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B340A-M3/5AT

bahagian bahagian: 149757

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 550mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYS10-45-M3/TR3

bahagian bahagian: 100846

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYS10-35-M3/TR

bahagian bahagian: 138959

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYS12-90-E3/TR

bahagian bahagian: 199414

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B360A-M3/5AT

bahagian bahagian: 186299

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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