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Diod - Pembetulan - Bujang

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S1PB-M3/85A
Vishay Semiconductor Diodes Division

S1PB-M3/85A

bahagian bahagian: 102892

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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VFT1080S-E3/4W
Vishay Semiconductor Diodes Division

VFT1080S-E3/4W

bahagian bahagian: 174822

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 810mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V4PAN50-M3/I
Vishay Semiconductor Diodes Division

V4PAN50-M3/I

bahagian bahagian: 104831

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 430mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-2EJH02HM3/6A
Vishay Semiconductor Diodes Division

VS-2EJH02HM3/6A

bahagian bahagian: 126318

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 930mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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SS3H10-M3/57T
Vishay Semiconductor Diodes Division

SS3H10-M3/57T

bahagian bahagian: 161702

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSB310-E3/52T
Vishay Semiconductor Diodes Division

VSSB310-E3/52T

bahagian bahagian: 155893

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1.9A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-3EJU06-M3/6B
Vishay Semiconductor Diodes Division

VS-3EJU06-M3/6B

bahagian bahagian: 68

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.35V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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SS1P4-M3/85A
Vishay Semiconductor Diodes Division

SS1P4-M3/85A

bahagian bahagian: 124587

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 530mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V20PW60HM3/I
Vishay Semiconductor Diodes Division

V20PW60HM3/I

bahagian bahagian: 186638

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF5M6-M3/I
Vishay Semiconductor Diodes Division

VSSAF5M6-M3/I

bahagian bahagian: 97

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS22HE3_A/I
Vishay Semiconductor Diodes Division

SS22HE3_A/I

bahagian bahagian: 108584

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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RS2DHE3_A/I
Vishay Semiconductor Diodes Division

RS2DHE3_A/I

bahagian bahagian: 136263

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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SS2H9-M3/52T
Vishay Semiconductor Diodes Division

SS2H9-M3/52T

bahagian bahagian: 142807

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 790mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-30BQ100HM3/9AT
Vishay Semiconductor Diodes Division

VS-30BQ100HM3/9AT

bahagian bahagian: 193076

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 790mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V8PA12HM3/I
Vishay Semiconductor Diodes Division

V8PA12HM3/I

bahagian bahagian: 71

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 870mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF5M10HM3/I
Vishay Semiconductor Diodes Division

VSSAF5M10HM3/I

bahagian bahagian: 75

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 790mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF5M10-M3/I
Vishay Semiconductor Diodes Division

VSSAF5M10-M3/I

bahagian bahagian: 113

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 790mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V8PA6HM3/I
Vishay Semiconductor Diodes Division

V8PA6HM3/I

bahagian bahagian: 95

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 630mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VFT3080S-E3/4W
Vishay Semiconductor Diodes Division

VFT3080S-E3/4W

bahagian bahagian: 132937

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR440-E3/54
Vishay Semiconductor Diodes Division

MUR440-E3/54

bahagian bahagian: 112080

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.28V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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VS-4ECH06-M3/9AT
Vishay Semiconductor Diodes Division

VS-4ECH06-M3/9AT

bahagian bahagian: 187019

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.85V @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 22ns,

Senarai harapan
S5G-E3/9AT
Vishay Semiconductor Diodes Division

S5G-E3/9AT

bahagian bahagian: 185690

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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VI20150S-M3/4W
Vishay Semiconductor Diodes Division

VI20150S-M3/4W

bahagian bahagian: 116120

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.43V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SS2PH5-M3/84A
Vishay Semiconductor Diodes Division

SS2PH5-M3/84A

bahagian bahagian: 113053

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-3EJH02-M3/6A
Vishay Semiconductor Diodes Division

VS-3EJH02-M3/6A

bahagian bahagian: 115089

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 930mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 18ns,

Senarai harapan
MSS2P2HM3_A/H
Vishay Semiconductor Diodes Division

MSS2P2HM3_A/H

bahagian bahagian: 125

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
S5A-E3/9AT
Vishay Semiconductor Diodes Division

S5A-E3/9AT

bahagian bahagian: 115288

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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VSSAF56HM3_A/H
Vishay Semiconductor Diodes Division

VSSAF56HM3_A/H

bahagian bahagian: 66

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 620mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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S1AFM-M3/6B
Vishay Semiconductor Diodes Division

S1AFM-M3/6B

bahagian bahagian: 128868

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.47µs,

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VS-MBRS130-M3/5BT
Vishay Semiconductor Diodes Division

VS-MBRS130-M3/5BT

bahagian bahagian: 170173

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 420mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF10100-E3/4W
Vishay Semiconductor Diodes Division

MBRF10100-E3/4W

bahagian bahagian: 52382

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
VS-3EJU06-M3/6A
Vishay Semiconductor Diodes Division

VS-3EJU06-M3/6A

bahagian bahagian: 105188

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.35V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

Senarai harapan
V20PW45-M3/I
Vishay Semiconductor Diodes Division

V20PW45-M3/I

bahagian bahagian: 192774

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 610mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

Senarai harapan
UF4006-M3/54
Vishay Semiconductor Diodes Division

UF4006-M3/54

bahagian bahagian: 181020

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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SE50PABHM3/I
Vishay Semiconductor Diodes Division

SE50PABHM3/I

bahagian bahagian: 135253

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.16V @ 5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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GPP20B-E3/54
Vishay Semiconductor Diodes Division

GPP20B-E3/54

bahagian bahagian: 102429

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 2A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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