Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 100

VSSAF3M6-M3/H

bahagian bahagian: 130

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 620mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

M2045S-E3/4W

bahagian bahagian: 153722

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

S1AFG-M3/6B

bahagian bahagian: 140857

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.47µs,

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Vishay Semiconductor Diodes Division

SS22-E3/5BT

bahagian bahagian: 171103

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VFT3080S-M3/4W

bahagian bahagian: 131164

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VSSAF5M15HM3/H

bahagian bahagian: 67

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

S3A-M3/9AT

bahagian bahagian: 163833

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 2.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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Vishay Semiconductor Diodes Division

UF4001-M3/73

bahagian bahagian: 185709

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

V3PAL45HM3_A/I

bahagian bahagian: 150166

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 540mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

S2M-M3/5BT

bahagian bahagian: 105744

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 1.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

S5M-E3/9AT

bahagian bahagian: 173617

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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Vishay Semiconductor Diodes Division

VI20120SG-M3/4W

bahagian bahagian: 136593

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.33V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SE30PAJHM3/I

bahagian bahagian: 118164

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.16V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.3µs,

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Vishay Semiconductor Diodes Division

S1PKHM3/85A

bahagian bahagian: 112215

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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Vishay Semiconductor Diodes Division

SB240S-E3/73

bahagian bahagian: 149554

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 500mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SE50PAJ-M3/I

bahagian bahagian: 108873

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1.6A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 940mV @ 2.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

S5A-M3/9AT

bahagian bahagian: 169146

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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Vishay Semiconductor Diodes Division

VSSAF56-M3/6B

bahagian bahagian: 125247

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 5A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 470mV @ 2.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

RS3AHE3_A/H

bahagian bahagian: 192553

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 2.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

SSB44HE3_A/H

bahagian bahagian: 151530

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 490mV @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V8PAM12HM3/I

bahagian bahagian: 81

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 8A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 8A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

UF4002-E3/53

bahagian bahagian: 143944

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

S1PK-M3/85A

bahagian bahagian: 159105

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 1.8µs,

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Vishay Semiconductor Diodes Division

SS3H9-E3/9AT

bahagian bahagian: 122819

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 90V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VF20120S-E3/4W

bahagian bahagian: 95199

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.12V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V3P6-M3/85A

bahagian bahagian: 174187

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 2.4A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 630mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

S5KHE3_A/H

bahagian bahagian: 178835

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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Vishay Semiconductor Diodes Division

UF4005-M3/73

bahagian bahagian: 160600

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

UF1005-E3/54

bahagian bahagian: 186726

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

M2035S-E3/4W

bahagian bahagian: 153662

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V35PW12HM3/I

bahagian bahagian: 122001

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 35A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.05V @ 35A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

CS3M-E3/H

bahagian bahagian: 58

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 3A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.8µs,

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Vishay Semiconductor Diodes Division

VSSAF3M6HM3/I

bahagian bahagian: 90

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 620mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VSSAF5M6HM3/I

bahagian bahagian: 145

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS1P6L-M3/85A

bahagian bahagian: 153285

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 590mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

RS3DHE3_A/I

bahagian bahagian: 146438

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 2.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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