Diod - Pembetulan - Bujang | Produk Semikonduktor Diskrit | 100

S3D-M3/57T

bahagian bahagian: 187041

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 2.5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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Vishay Semiconductor Diodes Division

VSSAF510HM3/I

bahagian bahagian: 70

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

UF4002-M3/73

bahagian bahagian: 189289

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

GPP20A-E3/54

bahagian bahagian: 133669

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 2A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

GPP10A-E3/73

bahagian bahagian: 118045

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS2PH6-M3/84A

bahagian bahagian: 125732

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

UF1005-M3/54

bahagian bahagian: 183697

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

V20DL45BP-M3/I

bahagian bahagian: 197575

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 20A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 640mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

UG4B-E3/73

bahagian bahagian: 172645

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

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Vishay Semiconductor Diodes Division

UF1006-M3/73

bahagian bahagian: 143940

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

VS-2EJH01HM3/6A

bahagian bahagian: 198713

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 930mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

S5D-M3/57T

bahagian bahagian: 125434

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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Vishay Semiconductor Diodes Division

RS3KHE3_A/H

bahagian bahagian: 155116

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 2.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 500ns,

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Vishay Semiconductor Diodes Division

UG1B-E3/54

bahagian bahagian: 132122

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

S5BHE3_A/I

bahagian bahagian: 178522

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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Vishay Semiconductor Diodes Division

V20PW45HM3/I

bahagian bahagian: 177916

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 610mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS2H10-M3/52T

bahagian bahagian: 143222

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 2A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 790mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

S5B-E3/9AT

bahagian bahagian: 148076

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 5A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2.5µs,

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Vishay Semiconductor Diodes Division

GPP10D-E3/54

bahagian bahagian: 175090

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

UF1006-M3/54

bahagian bahagian: 148870

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

VSSB3L6S-M3/5BT

bahagian bahagian: 198213

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io): 2.6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 590mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

RS2A-M3/5BT

bahagian bahagian: 182601

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 1.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 1.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

UG4C-M3/54

bahagian bahagian: 136319

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 1A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

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Vishay Semiconductor Diodes Division

GPP10B-E3/54

bahagian bahagian: 103495

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 1A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VSSAF5N50-M3/6B

bahagian bahagian: 187361

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 410mV @ 2.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VSSB410S-M3/5BT

bahagian bahagian: 150478

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 1.9A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 770mV @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V35PWM15HM3/I

bahagian bahagian: 123824

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 35A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 35A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VF20120S-M3/4W

bahagian bahagian: 133708

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.12V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V20PWM12HM3/I

bahagian bahagian: 170958

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.02V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VT1045BP-M3/4W

bahagian bahagian: 168874

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 680mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

VIT5200-E3/4W

bahagian bahagian: 195833

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.6V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

SS3P5HM3/84A

bahagian bahagian: 152623

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 780mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

V4PAL45HM3_A/I

bahagian bahagian: 192421

Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 430mV @ 2A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

UG4C-M3/73

bahagian bahagian: 155443

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io): 4A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 4A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

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Vishay Semiconductor Diodes Division

VS-3EJH01HM3/6B

bahagian bahagian: 121183

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 930mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 30ns,

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Vishay Semiconductor Diodes Division

SB2D-M3/52T

bahagian bahagian: 170713

Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io): 2A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 2A, Kepantasan: Standard Recovery >500ns, > 200mA (Io), Masa Pemulihan Berbalik (trr): 2µs,

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