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Dioda - Penyearah - Susunan

MBRT200150
GeneSiC Semiconductor

MBRT200150

bahagian bahagian: 1643

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR60035CTR
GeneSiC Semiconductor

MBR60035CTR

bahagian bahagian: 971

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT20060
GeneSiC Semiconductor

MBRT20060

bahagian bahagian: 1363

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR30020CT
GeneSiC Semiconductor

MUR30020CT

bahagian bahagian: 1118

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MURTA40020
GeneSiC Semiconductor

MURTA40020

bahagian bahagian: 990

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 200A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MUR40040CTR
GeneSiC Semiconductor

MUR40040CTR

bahagian bahagian: 1247

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 125A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR30060CTR
GeneSiC Semiconductor

MUR30060CTR

bahagian bahagian: 1311

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR400200CT
GeneSiC Semiconductor

MBR400200CT

bahagian bahagian: 1516

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2X050A080
GeneSiC Semiconductor

MBR2X050A080

bahagian bahagian: 3862

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MURTA20020R
GeneSiC Semiconductor

MURTA20020R

bahagian bahagian: 997

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MBRT200100R
GeneSiC Semiconductor

MBRT200100R

bahagian bahagian: 1601

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Reverse Polarity, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT40030R
GeneSiC Semiconductor

MBRT40030R

bahagian bahagian: 1342

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR12035CT
GeneSiC Semiconductor

MBR12035CT

bahagian bahagian: 1538

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 35V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR50060CT
GeneSiC Semiconductor

MBR50060CT

bahagian bahagian: 1162

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 500A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT50020R
GeneSiC Semiconductor

MBRT50020R

bahagian bahagian: 1081

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 500A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR40060CT
GeneSiC Semiconductor

MBR40060CT

bahagian bahagian: 1224

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT12080R
GeneSiC Semiconductor

MBRT12080R

bahagian bahagian: 1843

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR50030CTR
GeneSiC Semiconductor

MBR50030CTR

bahagian bahagian: 1126

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 500A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR2X120A12
GeneSiC Semiconductor

MUR2X120A12

bahagian bahagian: 2471

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.35V @ 120A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MBR20060CT
GeneSiC Semiconductor

MBR20060CT

bahagian bahagian: 1571

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT600100R
GeneSiC Semiconductor

MBRT600100R

bahagian bahagian: 949

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 600A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MURTA20020
GeneSiC Semiconductor

MURTA20020

bahagian bahagian: 1000

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MBRT600150R
GeneSiC Semiconductor

MBRT600150R

bahagian bahagian: 892

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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FST16030
GeneSiC Semiconductor

FST16030

bahagian bahagian: 1497

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 160A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 160A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MSRTA200120(A)D
GeneSiC Semiconductor

MSRTA200120(A)D

bahagian bahagian: 1326

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MBRT40080R
GeneSiC Semiconductor

MBRT40080R

bahagian bahagian: 1388

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 400A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 200A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MSRTA300140(A)D
GeneSiC Semiconductor

MSRTA300140(A)D

bahagian bahagian: 1362

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 300A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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LDR11666
Powerex Inc.

LDR11666

bahagian bahagian: 41

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 660A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 1978A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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UHB20FCT-E3/4W
Vishay Semiconductor Diodes Division

UHB20FCT-E3/4W

bahagian bahagian: 44467

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-60CPQ150PBF
Vishay Semiconductor Diodes Division

VS-60CPQ150PBF

bahagian bahagian: 13698

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 830mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V30200C-E3/4W
Vishay Semiconductor Diodes Division

V30200C-E3/4W

bahagian bahagian: 26870

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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NRVBD640CTG-VF01
ON Semiconductor

NRVBD640CTG-VF01

bahagian bahagian: 107735

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 700mV @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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F1892CCD400
Sensata-Crydom

F1892CCD400

bahagian bahagian: 927

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 90A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.4V @ 270A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MD240C16D2-BP
Micro Commercial Co

MD240C16D2-BP

bahagian bahagian: 1195

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 240A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 300A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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STPS10170CT
STMicroelectronics

STPS10170CT

bahagian bahagian: 67201

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 170V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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DSS2X101-02A
IXYS

DSS2X101-02A

bahagian bahagian: 2894

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 940mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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