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Dioda - Penyearah - Susunan

STPS41H100CR
STMicroelectronics

STPS41H100CR

bahagian bahagian: 39612

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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DD285N04KHPSA1
Infineon Technologies

DD285N04KHPSA1

bahagian bahagian: 94

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 285A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 800A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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DD600N12KHPSA2
Infineon Technologies

DD600N12KHPSA2

bahagian bahagian: 79

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 600A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.32V @ 1800A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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DD350N14KHPSA1
Infineon Technologies

DD350N14KHPSA1

bahagian bahagian: 94

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 350A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.28V @ 1000A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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DD600N14KHPSA2
Infineon Technologies

DD600N14KHPSA2

bahagian bahagian: 134

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 600A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.32V @ 1800A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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SBR20U150CTFP
Diodes Incorporated

SBR20U150CTFP

bahagian bahagian: 43394

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Super Barrier, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 780mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT500150R
GeneSiC Semiconductor

MBRT500150R

bahagian bahagian: 1121

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 250A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 250A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR120200CTR
GeneSiC Semiconductor

MBR120200CTR

bahagian bahagian: 1494

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR12020CT
GeneSiC Semiconductor

MBR12020CT

bahagian bahagian: 1559

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MSRTA30080(A)D
GeneSiC Semiconductor

MSRTA30080(A)D

bahagian bahagian: 1203

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 300A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MBR20080CT
GeneSiC Semiconductor

MBR20080CT

bahagian bahagian: 1491

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR60080CTR
GeneSiC Semiconductor

MBR60080CTR

bahagian bahagian: 823

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 300A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2X100A150
GeneSiC Semiconductor

MBR2X100A150

bahagian bahagian: 3067

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MURT20060R
GeneSiC Semiconductor

MURT20060R

bahagian bahagian: 1259

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MSRT150140(A)D
GeneSiC Semiconductor

MSRT150140(A)D

bahagian bahagian: 1854

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MBR120100CTR
GeneSiC Semiconductor

MBR120100CTR

bahagian bahagian: 1583

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MSRT15080(A)D
GeneSiC Semiconductor

MSRT15080(A)D

bahagian bahagian: 1929

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 800V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MURTA30060
GeneSiC Semiconductor

MURTA30060

bahagian bahagian: 946

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.7V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MURTA20040
GeneSiC Semiconductor

MURTA20040

bahagian bahagian: 958

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MURTA30040
GeneSiC Semiconductor

MURTA30040

bahagian bahagian: 977

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 150A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 150A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MBR2X050A120
GeneSiC Semiconductor

MBR2X050A120

bahagian bahagian: 3912

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 880mV @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V60D45CHM3_A/I
Vishay Semiconductor Diodes Division

V60D45CHM3_A/I

bahagian bahagian: 128

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 640mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V20150C-M3/4W
Vishay Semiconductor Diodes Division

V20150C-M3/4W

bahagian bahagian: 95462

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V20DM60C-M3/I
Vishay Semiconductor Diodes Division

V20DM60C-M3/I

bahagian bahagian: 90

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 660mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VFT30L60C-E3/4W
Vishay Semiconductor Diodes Division

VFT30L60C-E3/4W

bahagian bahagian: 77276

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 600mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VT1080C-E3/4W
Vishay Semiconductor Diodes Division

VT1080C-E3/4W

bahagian bahagian: 152058

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V40PWM12CHM3/I
Vishay Semiconductor Diodes Division

V40PWM12CHM3/I

bahagian bahagian: 110551

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V20120C-M3/4W
Vishay Semiconductor Diodes Division

V20120C-M3/4W

bahagian bahagian: 96111

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MI2060C-E3/4W
Vishay Semiconductor Diodes Division

MI2060C-E3/4W

bahagian bahagian: 123308

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 740mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MF200K06F4-BP
Micro Commercial Co

MF200K06F4-BP

bahagian bahagian: 2396

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.15V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SBR3045CT
SMC Diode Solutions

SBR3045CT

bahagian bahagian: 159124

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 800mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GSXD030A006S1-D3
Global Power Technologies Group

GSXD030A006S1-D3

bahagian bahagian: 5311

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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GHXS050A060S-D4
Global Power Technologies Group

GHXS050A060S-D4

bahagian bahagian: 1422

Konfigurasi Diod: 2 Independent, Jenis Diod: Silicon Carbide Schottky, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 50A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.8V @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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LQA10T150C
Power Integrations

LQA10T150C

bahagian bahagian: 127319

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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LQA12T300C
Power Integrations

LQA12T300C

bahagian bahagian: 76650

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 300V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 6A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.9V @ 6A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF15150CTHC0G
Taiwan Semiconductor Corporation

MBRF15150CTHC0G

bahagian bahagian: 134

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 7.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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