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Dioda - Penyearah - Susunan

NRVHP620MFDT1G
ON Semiconductor

NRVHP620MFDT1G

bahagian bahagian: 110114

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 3A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 3A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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NTSV20H120ECTG
ON Semiconductor

NTSV20H120ECTG

bahagian bahagian: 186022

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1V @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF2050CT C0G
Taiwan Semiconductor Corporation

MBRF2050CT C0G

bahagian bahagian: 153

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 950mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF20L120CTHC0G
Taiwan Semiconductor Corporation

MBRF20L120CTHC0G

bahagian bahagian: 95

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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UG1006GHC0G
Taiwan Semiconductor Corporation

UG1006GHC0G

bahagian bahagian: 130

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.25V @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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STPS1545CG-TR
STMicroelectronics

STPS1545CG-TR

bahagian bahagian: 105409

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 7.5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 570mV @ 7.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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RB706D-40T146
Rohm Semiconductor

RB706D-40T146

bahagian bahagian: 102011

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 40V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15mA, Voltan - Maju (Vf) (Maks) @ Sekiranya: 370mV @ 1mA, Kepantasan: Small Signal =< 200mA (Io), Any Speed,

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MBRT12020R
GeneSiC Semiconductor

MBRT12020R

bahagian bahagian: 1833

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2X160A100
GeneSiC Semiconductor

MBR2X160A100

bahagian bahagian: 2757

Konfigurasi Diod: 2 Independent, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 160A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 160A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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FST120200
GeneSiC Semiconductor

FST120200

bahagian bahagian: 1639

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 60A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 920mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MSRTA300120(A)D
GeneSiC Semiconductor

MSRTA300120(A)D

bahagian bahagian: 1322

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 300A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MUR10005CT
GeneSiC Semiconductor

MUR10005CT

bahagian bahagian: 1579

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 50V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 50A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR20020CT
GeneSiC Semiconductor

MUR20020CT

bahagian bahagian: 1243

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 200V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.3V @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MSRT200160(A)D
GeneSiC Semiconductor

MSRT200160(A)D

bahagian bahagian: 1391

Konfigurasi Diod: 1 Pair Series Connection, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.1V @ 200A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MUR2X100A06
GeneSiC Semiconductor

MUR2X100A06

bahagian bahagian: 3294

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 600V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.5V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MBR200100CT
GeneSiC Semiconductor

MBR200100CT

bahagian bahagian: 1490

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 200A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 840mV @ 100A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR12020CTR
GeneSiC Semiconductor

MBR12020CTR

bahagian bahagian: 1553

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 20V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 120A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR30030CT
GeneSiC Semiconductor

MBR30030CT

bahagian bahagian: 1489

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 30V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 300A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 150A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR2X100A10
GeneSiC Semiconductor

MUR2X100A10

bahagian bahagian: 3311

Konfigurasi Diod: 2 Independent, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 1000V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 100A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 2.35V @ 100A, Kepantasan: Standard Recovery >500ns, > 200mA (Io),

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MBRT12045
GeneSiC Semiconductor

MBRT12045

bahagian bahagian: 1864

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 120A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 60A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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FST16045
GeneSiC Semiconductor

FST16045

bahagian bahagian: 1496

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 160A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 750mV @ 160A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VFT1045CBP-M3/4W
Vishay Semiconductor Diodes Division

VFT1045CBP-M3/4W

bahagian bahagian: 147491

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 5A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 580mV @ 5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VFT2060G-E3/4W
Vishay Semiconductor Diodes Division

VFT2060G-E3/4W

bahagian bahagian: 156407

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A (DC), Voltan - Maju (Vf) (Maks) @ Sekiranya: 900mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V60D45C-M3/I
Vishay Semiconductor Diodes Division

V60D45C-M3/I

bahagian bahagian: 32760

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 640mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VIT2060C-E3/4W
Vishay Semiconductor Diodes Division

VIT2060C-E3/4W

bahagian bahagian: 141541

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 650mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VT4060C-E3/4W
Vishay Semiconductor Diodes Division

VT4060C-E3/4W

bahagian bahagian: 69524

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 620mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VIT2080C-M3/4W
Vishay Semiconductor Diodes Division

VIT2080C-M3/4W

bahagian bahagian: 118184

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 80V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 10A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 810mV @ 10A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VF40150C-M3/4W
Vishay Semiconductor Diodes Division

VF40150C-M3/4W

bahagian bahagian: 91361

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.43V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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VFT6045C-M3/4W
Vishay Semiconductor Diodes Division

VFT6045C-M3/4W

bahagian bahagian: 54606

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 30A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 640mV @ 30A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V30M120C-M3/4W
Vishay Semiconductor Diodes Division

V30M120C-M3/4W

bahagian bahagian: 99774

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 120V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 980mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V40PW60CHM3/I
Vishay Semiconductor Diodes Division

V40PW60CHM3/I

bahagian bahagian: 108899

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 60V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 680mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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V30D45C-M3/I
Vishay Semiconductor Diodes Division

V30D45C-M3/I

bahagian bahagian: 41859

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 570mV @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SBR1545CT
SMC Diode Solutions

SBR1545CT

bahagian bahagian: 121214

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Schottky, Voltan - Terbalik DC (Vr) (Maks): 45V, Voltan - Maju (Vf) (Maks) @ Sekiranya: 720mV @ 7.5A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SDURF3040CTR
SMC Diode Solutions

SDURF3040CTR

bahagian bahagian: 169247

Konfigurasi Diod: 1 Pair Common Anode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 400V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 15A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.45V @ 15A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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SBR40100CT
Diodes Incorporated

SBR40100CT

bahagian bahagian: 26567

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Super Barrier, Voltan - Terbalik DC (Vr) (Maks): 100V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 820mV @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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LQA40T150C
Power Integrations

LQA40T150C

bahagian bahagian: 36324

Konfigurasi Diod: 1 Pair Common Cathode, Jenis Diod: Standard, Voltan - Terbalik DC (Vr) (Maks): 150V, Semasa - Rata-rata Disahkan (Io) (setiap Diod): 20A, Voltan - Maju (Vf) (Maks) @ Sekiranya: 1.2V @ 20A, Kepantasan: Fast Recovery =< 500ns, > 200mA (Io),

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