Menu
MelayuMelayu
Rfqs / order.
0Rfqs / order.

Transistor - Bipolar (BJT) - Susunan

MAT01GH
Analog Devices Inc.

MAT01GH

bahagian bahagian: 3534

Jenis Transistor: 2 NPN (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 25mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 400nA,

Bersenang-senang
SSM2212CPZ-RL
Analog Devices Inc.

SSM2212CPZ-RL

bahagian bahagian: 17521

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 20mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 15V,

Bersenang-senang
MAT14ARZ-RL
Analog Devices Inc.

MAT14ARZ-RL

bahagian bahagian: 11095

Jenis Transistor: 4 NPN (Quad) Matched Pairs, Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 60mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 3nA,

Bersenang-senang
MAT03EHZ
Analog Devices Inc.

MAT03EHZ

bahagian bahagian: 4479

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 20mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 36V, Ketepuan Vce (Maks) @ Ib, Ic: 100mV @ 100µA, 1mA,

Bersenang-senang
UMY1NTR
Rohm Semiconductor

UMY1NTR

bahagian bahagian: 105089

Jenis Transistor: NPN, PNP (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

Bersenang-senang
UMB2NFHATN
Rohm Semiconductor

UMB2NFHATN

bahagian bahagian: 120

Jenis Transistor: 2 PNP Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 500µA, 10mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V,

Bersenang-senang
UMB3NFHATN
Rohm Semiconductor

UMB3NFHATN

bahagian bahagian: 123

Jenis Transistor: 2 PNP Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 250µA, 5mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

Bersenang-senang
PMBT3946VPN,115
Nexperia USA Inc.

PMBT3946VPN,115

bahagian bahagian: 148127

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

Bersenang-senang
PMP4501V,115
Nexperia USA Inc.

PMP4501V,115

bahagian bahagian: 117231

Jenis Transistor: 2 NPN (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

Bersenang-senang
PEMZ1,115
Nexperia USA Inc.

PEMZ1,115

bahagian bahagian: 155883

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

Bersenang-senang
PMBT3904VS,115
Nexperia USA Inc.

PMBT3904VS,115

bahagian bahagian: 198170

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

Bersenang-senang
PEMX1,315
Nexperia USA Inc.

PEMX1,315

bahagian bahagian: 141674

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

Bersenang-senang
PMP4501QASZ
Nexperia USA Inc.

PMP4501QASZ

bahagian bahagian: 97

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V,

Bersenang-senang
PBSS5130PAP,115
Nexperia USA Inc.

PBSS5130PAP,115

bahagian bahagian: 169332

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 280mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 2V,

Bersenang-senang
SBC846BPDW1T2G
ON Semiconductor

SBC846BPDW1T2G

bahagian bahagian: 175944

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

Bersenang-senang
NST3946DP6T5G
ON Semiconductor

NST3946DP6T5G

bahagian bahagian: 152851

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

Bersenang-senang
CPH5505-TL-E
ON Semiconductor

CPH5505-TL-E

bahagian bahagian: 166597

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 230mV @ 30mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V,

Bersenang-senang
NSVBC848CDW1T1G
ON Semiconductor

NSVBC848CDW1T1G

bahagian bahagian: 125941

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

Bersenang-senang
NSV40300MDR2G
ON Semiconductor

NSV40300MDR2G

bahagian bahagian: 148007

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 170mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V,

Bersenang-senang
EMT1DXV6T1
ON Semiconductor

EMT1DXV6T1

bahagian bahagian: 4480

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

Bersenang-senang
NST847BDP6T5G
ON Semiconductor

NST847BDP6T5G

bahagian bahagian: 165488

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

Bersenang-senang
NST65010MW6T1G
ON Semiconductor

NST65010MW6T1G

bahagian bahagian: 196459

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V,

Bersenang-senang
NST847BPDP6T5G
ON Semiconductor

NST847BPDP6T5G

bahagian bahagian: 170917

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA / 700mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V / 220 @ 2mA, 5V,

Bersenang-senang
SBC847BPDW1T1G
ON Semiconductor

SBC847BPDW1T1G

bahagian bahagian: 147868

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

Bersenang-senang
FMB5551
ON Semiconductor

FMB5551

bahagian bahagian: 161037

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 160V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Bersenang-senang
ZXTDAM832TA
Diodes Incorporated

ZXTDAM832TA

bahagian bahagian: 4629

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 4.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 15V, Ketepuan Vce (Maks) @ Ib, Ic: 280mV @ 50mA, 4.5A, Semasa - Potongan Pemungut (Maksimum): 25nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V,

Bersenang-senang
ZDT705TC
Diodes Incorporated

ZDT705TC

bahagian bahagian: 4410

Jenis Transistor: 2 PNP Darlington (Dual), Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 2.5V @ 2mA, 2A, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 3000 @ 1A, 5V,

Bersenang-senang
ZXTP56020FDBQ-7
Diodes Incorporated

ZXTP56020FDBQ-7

bahagian bahagian: 9974

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 390mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V,

Bersenang-senang
SG2003J-JAN
Microsemi Corporation

SG2003J-JAN

bahagian bahagian: 4491

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Bersenang-senang
SG2803J-883B
Microsemi Corporation

SG2803J-883B

bahagian bahagian: 4488

Jenis Transistor: 8 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Bersenang-senang
SMA6010
Sanken

SMA6010

bahagian bahagian: 14708

Jenis Transistor: 3 NPN, 3 PNP Darlington (3-Phase Bridge), Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 6mA, 3A, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 4V,

Bersenang-senang
HN1B01FU-Y(L,F,T)
Toshiba Semiconductor and Storage

HN1B01FU-Y(L,F,T)

bahagian bahagian: 4365

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

Bersenang-senang
HN1A01FE-GR,LF
Toshiba Semiconductor and Storage

HN1A01FE-GR,LF

bahagian bahagian: 167758

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Bersenang-senang
MPQ6700
Central Semiconductor Corp

MPQ6700

bahagian bahagian: 15034

Jenis Transistor: 2 NPN, 2 PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V,

Bersenang-senang
CA3083
Renesas Electronics America Inc.

CA3083

bahagian bahagian: 4402

Jenis Transistor: 5 NPN, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 15V, Ketepuan Vce (Maks) @ Ib, Ic: 700mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 3V,

Bersenang-senang
ULN2804A
STMicroelectronics

ULN2804A

bahagian bahagian: 67807

Jenis Transistor: 8 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Bersenang-senang