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Transistor - Bipolar (BJT) - Susunan

ZDT6718TC
Diodes Incorporated

ZDT6718TC

bahagian bahagian: 4485

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 2A, 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 50mA, 2.5A / 220mV @ 50mA, 1.5A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V / 300 @ 100mA, 2V,

Bersenang-senang
MMDT2227-7
Diodes Incorporated

MMDT2227-7

bahagian bahagian: 4423

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Bersenang-senang
ZDT6758TA
Diodes Incorporated

ZDT6758TA

bahagian bahagian: 4405

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 400V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 10V,

Bersenang-senang
ZDT6702TA
Diodes Incorporated

ZDT6702TA

bahagian bahagian: 4463

Jenis Transistor: NPN, PNP Darlington (Dual), Semasa - Pemungut (Ic) (Maks): 1.75A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.28V @ 2mA, 1.75A, Semasa - Potongan Pemungut (Maksimum): 500nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 5000 @ 500mA, 5V / 2000 @ 500mA, 5V,

Bersenang-senang
MMDT2222A-7-F
Diodes Incorporated

MMDT2222A-7-F

bahagian bahagian: 113190

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Bersenang-senang
ULN2001D1013TR
STMicroelectronics

ULN2001D1013TR

bahagian bahagian: 116684

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Bersenang-senang
L6221CD013TR
STMicroelectronics

L6221CD013TR

bahagian bahagian: 4447

Jenis Transistor: 4 NPN Darlington (Quad), Semasa - Pemungut (Ic) (Maks): 1.2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V,

Bersenang-senang
E-ULN2001A
STMicroelectronics

E-ULN2001A

bahagian bahagian: 4468

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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PMP4201G,135
Nexperia USA Inc.

PMP4201G,135

bahagian bahagian: 169899

Jenis Transistor: 2 NPN (Dual) Matched Pair, Common Emitter, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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PBSS4260PANSX
Nexperia USA Inc.

PBSS4260PANSX

bahagian bahagian: 103156

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V,

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PUMT1,115
Nexperia USA Inc.

PUMT1,115

bahagian bahagian: 186793

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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PBSS4041SPN,115
Nexperia USA Inc.

PBSS4041SPN,115

bahagian bahagian: 155017

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 6.7A, 5.9A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 350mV @ 350mA, 7A / 275mV @ 400mA, 4A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V / 150 @ 2A, 2V,

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XP0140100L
Panasonic Electronic Components

XP0140100L

bahagian bahagian: 4443

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V,

Bersenang-senang
XN0150900L
Panasonic Electronic Components

XN0150900L

bahagian bahagian: 151617

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 10V,

Bersenang-senang
DMA201010R
Panasonic Electronic Components

DMA201010R

bahagian bahagian: 187921

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V,

Bersenang-senang
XP0643500L
Panasonic Electronic Components

XP0643500L

bahagian bahagian: 4573

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 100mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 10V,

Bersenang-senang
XN0250100L
Panasonic Electronic Components

XN0250100L

bahagian bahagian: 4500

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V,

Bersenang-senang
XN0450200L
Panasonic Electronic Components

XN0450200L

bahagian bahagian: 4419

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 30mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V,

Bersenang-senang
ULN2004AINSE4
Texas Instruments

ULN2004AINSE4

bahagian bahagian: 4436

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

Bersenang-senang
ULN2004AINS
Texas Instruments

ULN2004AINS

bahagian bahagian: 4448

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

Bersenang-senang
ULN2003ANSRE4
Texas Instruments

ULN2003ANSRE4

bahagian bahagian: 161418

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

Bersenang-senang
NSVT3946DP6T5G
ON Semiconductor

NSVT3946DP6T5G

bahagian bahagian: 194061

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V / 100 @ 10mA, 1V,

Bersenang-senang
EMX2DXV6T5G
ON Semiconductor

EMX2DXV6T5G

bahagian bahagian: 131066

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

Bersenang-senang
NST65011MW6T1G
ON Semiconductor

NST65011MW6T1G

bahagian bahagian: 154437

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

Bersenang-senang
NSS40300DDR2G
ON Semiconductor

NSS40300DDR2G

bahagian bahagian: 115078

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 170mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V,

Bersenang-senang
HN1B01FDW1T1G
ON Semiconductor

HN1B01FDW1T1G

bahagian bahagian: 165648

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 2µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Bersenang-senang
MCH6536-TL-E
ON Semiconductor

MCH6536-TL-E

bahagian bahagian: 6450

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 700mA, 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 15V, 12V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 200mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V,

Bersenang-senang
FMBM5551
ON Semiconductor

FMBM5551

bahagian bahagian: 187576

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 160V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Bersenang-senang
JANTX2N3810U
Microsemi Corporation

JANTX2N3810U

bahagian bahagian: 1675

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

Bersenang-senang
JANTX2N6987
Microsemi Corporation

JANTX2N6987

bahagian bahagian: 1284

Jenis Transistor: 4 PNP (Quad), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Bersenang-senang
MD2369
Central Semiconductor Corp

MD2369

bahagian bahagian: 4474

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 15V, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V,

Bersenang-senang
MD2905
Central Semiconductor Corp

MD2905

bahagian bahagian: 4460

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Bersenang-senang
STA413A
Sanken

STA413A

bahagian bahagian: 19183

Jenis Transistor: 4 NPN (Quad), Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 35V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 500 @ 500mA, 4V,

Bersenang-senang
STA403A
Sanken

STA403A

bahagian bahagian: 23201

Jenis Transistor: 4 NPN Darlington (Quad), Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 100V @ 10mA, Semasa - Potongan Pemungut (Maksimum): 100µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 4V,

Bersenang-senang
SMBT3906SE6327HTSA1
Infineon Technologies

SMBT3906SE6327HTSA1

bahagian bahagian: 4488

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

Bersenang-senang
IMZ1AT108
Rohm Semiconductor

IMZ1AT108

bahagian bahagian: 154056

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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