Transistor - Bipolar (BJT) - Susunan

NSV40302PDR2G

bahagian bahagian: 172467

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 115mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V,

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NSVT3904DXV6T1G

bahagian bahagian: 128900

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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FMBA14

bahagian bahagian: 179794

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 1.2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 100µA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V,

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NSM4002MR6T1G

bahagian bahagian: 171582

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, 45V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA / 700mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V / 250 @ 100mA, 1V,

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NSVT45011MW6T3G

bahagian bahagian: 174696

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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NST30010MXV6T1G

bahagian bahagian: 190901

Jenis Transistor: 2 PNP (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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NST3904DXV6T1G

bahagian bahagian: 101109

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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SHN1B01FDW1T1G

bahagian bahagian: 160441

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 2µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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SBC847CDW1T1G

bahagian bahagian: 146654

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V,

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NSVEMT1DXV6T5G

bahagian bahagian: 197370

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 500pA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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SBC856BDW1T3G

bahagian bahagian: 108317

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V,

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NSVEMX1DXV6T1G

bahagian bahagian: 103172

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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NST45011MW6T1G

bahagian bahagian: 182701

Jenis Transistor: 2 NPN (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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CPH5506-TL-E

bahagian bahagian: 120064

Jenis Transistor: NPN, PNP (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 225mV @ 15mA, 750mA / 375mV @ 15mA, 750mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V,

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PBSS2515VS,115

bahagian bahagian: 103294

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 15V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V,

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PMP5501V,115

bahagian bahagian: 150519

Jenis Transistor: 2 PNP (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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PEMT1,315

bahagian bahagian: 104109

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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PMP4201V,115

bahagian bahagian: 187429

Jenis Transistor: 2 NPN (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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PBSS2515VS,315

bahagian bahagian: 169422

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 15V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V,

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IMX25T110

bahagian bahagian: 176308

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 300mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 100mV @ 3mA, 30mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 820 @ 4ma, 2V,

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UMH3NFHATN

bahagian bahagian: 54

Jenis Transistor: 2 NPN - Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 250µA, 5mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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EMX1FHAT2R

bahagian bahagian: 86

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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UMB4NFHATN

bahagian bahagian: 65

Jenis Transistor: 2 PNP Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V,

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UMB10NFHATN

bahagian bahagian: 86

Jenis Transistor: 2 PNP Pre-Biased (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 250µA, 5mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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