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Transistor - Bipolar (BJT) - Susunan

DMMT5551-7
Diodes Incorporated

DMMT5551-7

bahagian bahagian: 6516

Jenis Transistor: 2 NPN (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 160V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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ZHB6718TC
Diodes Incorporated

ZHB6718TC

bahagian bahagian: 4430

Jenis Transistor: 2 NPN, 2 PNP (H-Bridge), Semasa - Pemungut (Ic) (Maks): 2.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 50mA, 2.5A, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V,

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MMDT2907A-7-F
Diodes Incorporated

MMDT2907A-7-F

bahagian bahagian: 123494

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Bersenang-senang
ZXTC2063E6TA
Diodes Incorporated

ZXTC2063E6TA

bahagian bahagian: 140502

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 3.5A, 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 195mV @ 350mA, 3.5A / 175mV @ 300mA, 3A, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V / 200 @ 1A, 2V,

Bersenang-senang
ULN2002AD16-U
Diodes Incorporated

ULN2002AD16-U

bahagian bahagian: 113611

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

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MMDT4401-7-F
Diodes Incorporated

MMDT4401-7-F

bahagian bahagian: 120895

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 750mV @ 50mA, 500mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V,

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MMDT3946FL3-7
Diodes Incorporated

MMDT3946FL3-7

bahagian bahagian: 184037

Jenis Transistor: NPN, PNP Complementary, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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ZXTC6717MCTA
Diodes Incorporated

ZXTC6717MCTA

bahagian bahagian: 9941

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 4.5A, 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 15V, 12V, Ketepuan Vce (Maks) @ Ib, Ic: 310mV @ 50mA, 4.5A / 310mV @ 150mA, 4A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V, 300 @ 100mA, 2V,

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DMA204010R
Panasonic Electronic Components

DMA204010R

bahagian bahagian: 180618

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V,

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XP0450100L
Panasonic Electronic Components

XP0450100L

bahagian bahagian: 4596

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V,

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DME20C010R
Panasonic Electronic Components

DME20C010R

bahagian bahagian: 132996

Jenis Transistor: NPN, PNP Complementary Darlington, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V,

Bersenang-senang
NSVT65011MW6T1G
ON Semiconductor

NSVT65011MW6T1G

bahagian bahagian: 147100

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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CPH6539-TL-H
ON Semiconductor

CPH6539-TL-H

bahagian bahagian: 157612

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 1.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 15mA, 750mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V,

Bersenang-senang
NSVT65010MW6T1G
ON Semiconductor

NSVT65010MW6T1G

bahagian bahagian: 171628

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 65V, Ketepuan Vce (Maks) @ Ib, Ic: 650mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V,

Bersenang-senang
EMT1DXV6T5
ON Semiconductor

EMT1DXV6T5

bahagian bahagian: 4423

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

Bersenang-senang
MBT3904DW1T3G
ON Semiconductor

MBT3904DW1T3G

bahagian bahagian: 132584

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

Bersenang-senang
NST3904DP6T5G
ON Semiconductor

NST3904DP6T5G

bahagian bahagian: 189012

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

Bersenang-senang
SBC847BDW1T3G
ON Semiconductor

SBC847BDW1T3G

bahagian bahagian: 124858

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

Bersenang-senang
MCH6545-TL-E
ON Semiconductor

MCH6545-TL-E

bahagian bahagian: 114896

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 100mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V,

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NST3946DXV6T1G
ON Semiconductor

NST3946DXV6T1G

bahagian bahagian: 193638

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

Bersenang-senang
NSVBC847BDW1T2G
ON Semiconductor

NSVBC847BDW1T2G

bahagian bahagian: 174951

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

Bersenang-senang
PMP5201V,115
Nexperia USA Inc.

PMP5201V,115

bahagian bahagian: 109977

Jenis Transistor: 2 PNP (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

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PMP4201Y,115
Nexperia USA Inc.

PMP4201Y,115

bahagian bahagian: 155239

Jenis Transistor: 2 NPN (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 15nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V,

Bersenang-senang
CMKT3906 TR
Central Semiconductor Corp

CMKT3906 TR

bahagian bahagian: 113735

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

Bersenang-senang
CMLT5088EM TR
Central Semiconductor Corp

CMLT5088EM TR

bahagian bahagian: 171363

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V,

Bersenang-senang
HN4C06J-BL(TE85L,F
Toshiba Semiconductor and Storage

HN4C06J-BL(TE85L,F

bahagian bahagian: 141983

Jenis Transistor: 2 NPN (Dual) Common Emitter, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Bersenang-senang
HN2C01FU-GR(T5L,F)
Toshiba Semiconductor and Storage

HN2C01FU-GR(T5L,F)

bahagian bahagian: 156520

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Bersenang-senang
ULN2002A
STMicroelectronics

ULN2002A

bahagian bahagian: 95190

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Bersenang-senang
ULN2075B
STMicroelectronics

ULN2075B

bahagian bahagian: 22319

Jenis Transistor: 4 NPN Darlington (Quad), Semasa - Pemungut (Ic) (Maks): 1.75A, Voltan - Pemecahan Pemancar Pemungut (Maks): 80V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 2.25mA, 1.5A,

Bersenang-senang
ULN2064B
STMicroelectronics

ULN2064B

bahagian bahagian: 26028

Jenis Transistor: 4 NPN Darlington (Quad), Semasa - Pemungut (Ic) (Maks): 1.75A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.4V @ 2mA, 1.25A,

Bersenang-senang
ULQ2003D1013TR
STMicroelectronics

ULQ2003D1013TR

bahagian bahagian: 117709

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Bersenang-senang
E-ULQ2003D1
STMicroelectronics

E-ULQ2003D1

bahagian bahagian: 4432

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

Bersenang-senang
ULN2003ADRE4
Texas Instruments

ULN2003ADRE4

bahagian bahagian: 156943

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

Bersenang-senang
JANTXV2N2919U
Microsemi Corporation

JANTXV2N2919U

bahagian bahagian: 1139

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

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JANTXV2N5794
Microsemi Corporation

JANTXV2N5794

bahagian bahagian: 231

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 900mV @ 30mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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UMX4NTR
Rohm Semiconductor

UMX4NTR

bahagian bahagian: 184327

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 4mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V,

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