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Transistor - Bipolar (BJT) - Susunan

ULN2004AIDR
Texas Instruments

ULN2004AIDR

bahagian bahagian: 179925

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

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ULN2003ANE4
Texas Instruments

ULN2003ANE4

bahagian bahagian: 108492

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

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ULN2003BDR
Texas Instruments

ULN2003BDR

bahagian bahagian: 160363

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

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PBSS5230PAP,115
Nexperia USA Inc.

PBSS5230PAP,115

bahagian bahagian: 148433

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 420mv @ 100mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V,

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PUMX1,115
Nexperia USA Inc.

PUMX1,115

bahagian bahagian: 106417

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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PHPT610030NPKX
Nexperia USA Inc.

PHPT610030NPKX

bahagian bahagian: 121393

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 3A, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 330mV @ 300mA, 3A / 110mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 80 @ 1A, 10V,

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PBSS4112PANP,115
Nexperia USA Inc.

PBSS4112PANP,115

bahagian bahagian: 194119

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 120mV @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 2V,

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PBSS4032SPN,115
Nexperia USA Inc.

PBSS4032SPN,115

bahagian bahagian: 155040

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 5.7A, 4.8A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 450mV @ 300mA, 6A / 510mV @ 250mA, 5A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V / 150 @ 2A, 2V,

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PMBT3946YPN,125
Nexperia USA Inc.

PMBT3946YPN,125

bahagian bahagian: 181115

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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UP0453400L
Panasonic Electronic Components

UP0453400L

bahagian bahagian: 4538

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 15mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V,

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XN0B30100L
Panasonic Electronic Components

XN0B30100L

bahagian bahagian: 6508

Jenis Transistor: NPN, PNP Complementary Darlington, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V,

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DMA506010R
Panasonic Electronic Components

DMA506010R

bahagian bahagian: 147841

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V,

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UP0460100L
Panasonic Electronic Components

UP0460100L

bahagian bahagian: 4382

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 10V / 180 @ 5mA, 10V,

Bersenang-senang
UP04501G0L
Panasonic Electronic Components

UP04501G0L

bahagian bahagian: 4634

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 10V,

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ULN2003D1
STMicroelectronics

ULN2003D1

bahagian bahagian: 4541

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

Bersenang-senang
JANTXV2N2919L
Microsemi Corporation

JANTXV2N2919L

bahagian bahagian: 1586

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V,

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JANSR2N2920U
Microsemi Corporation

JANSR2N2920U

bahagian bahagian: 4563

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Bersenang-senang
JANTXV2N6987
Microsemi Corporation

JANTXV2N6987

bahagian bahagian: 1339

Jenis Transistor: 4 PNP (Quad), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

Bersenang-senang
JANTX2N2920
Microsemi Corporation

JANTX2N2920

bahagian bahagian: 204

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 30mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Bersenang-senang
JAN2N3811U
Microsemi Corporation

JAN2N3811U

bahagian bahagian: 4458

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 100µA, 1mA, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

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FMY5T148
Rohm Semiconductor

FMY5T148

bahagian bahagian: 168226

Jenis Transistor: NPN, PNP (Emitter Coupled), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 120V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 500nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V,

Bersenang-senang
MC1413PG
ON Semiconductor

MC1413PG

bahagian bahagian: 128529

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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MMPQ2907A
ON Semiconductor

MMPQ2907A

bahagian bahagian: 96889

Jenis Transistor: 4 PNP (Quad), Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 20nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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ZXTD717MCTA
Diodes Incorporated

ZXTD717MCTA

bahagian bahagian: 126820

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 4A, Voltan - Pemecahan Pemancar Pemungut (Maks): 12V, Ketepuan Vce (Maks) @ Ib, Ic: 310mV @ 150mA, 4A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 2.5A, 2V,

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ULN2003V12S16-13
Diodes Incorporated

ULN2003V12S16-13

bahagian bahagian: 132682

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

Bersenang-senang
ZXTD718MCTA
Diodes Incorporated

ZXTD718MCTA

bahagian bahagian: 103485

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 3.5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 350mA, 3.5A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V,

Bersenang-senang
ZXTD6717E6TC
Diodes Incorporated

ZXTD6717E6TC

bahagian bahagian: 4441

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 1.5A, 1.25A, Voltan - Pemecahan Pemancar Pemungut (Maks): 15V, 12V, Ketepuan Vce (Maks) @ Ib, Ic: 245mV @ 20mA, 1.5A / 240mV @ 100mA, 1.25A, Semasa - Potongan Pemungut (Maksimum): 10nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V / 200 @ 500mA, 2V,

Bersenang-senang
MMDT4126-7-F
Diodes Incorporated

MMDT4126-7-F

bahagian bahagian: 124439

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V,

Bersenang-senang
MMDT4124-7-F
Diodes Incorporated

MMDT4124-7-F

bahagian bahagian: 119491

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 25V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V,

Bersenang-senang
DSS45160FDB-7
Diodes Incorporated

DSS45160FDB-7

bahagian bahagian: 130170

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 1A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V,

Bersenang-senang
ZDT6757TA
Diodes Incorporated

ZDT6757TA

bahagian bahagian: 4442

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 300V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V,

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CMKT5078 TR
Central Semiconductor Corp

CMKT5078 TR

bahagian bahagian: 162501

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA / 300mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V / 250 @ 100µA, 5V,

Bersenang-senang
CMKT3920 TR
Central Semiconductor Corp

CMKT3920 TR

bahagian bahagian: 186053

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

Bersenang-senang
HN2A01FU-GR(TE85LF
Toshiba Semiconductor and Storage

HN2A01FU-GR(TE85LF

bahagian bahagian: 4497

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Bersenang-senang
HN2C01FEYTE85LF
Toshiba Semiconductor and Storage

HN2C01FEYTE85LF

bahagian bahagian: 4567

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 150mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

Bersenang-senang
MAT01GHZ
Analog Devices Inc.

MAT01GHZ

bahagian bahagian: 3902

Jenis Transistor: 2 NPN (Dual) Matched Pair, Semasa - Pemungut (Ic) (Maks): 25mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 45V, Ketepuan Vce (Maks) @ Ib, Ic: 800mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 400nA,

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