Transistor - Bipolar (BJT) - Susunan

DMC206E20R

bahagian bahagian: 145856

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 15mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V,

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XN0450400L

bahagian bahagian: 4657

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 20V, Ketepuan Vce (Maks) @ Ib, Ic: 400mV @ 20mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V,

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XN0440200L

bahagian bahagian: 4456

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 600mV @ 30mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V,

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XP0553100L

bahagian bahagian: 4434

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 10V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 4mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 75 @ 5mA, 4V,

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DMC205C00R

bahagian bahagian: 149770

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 20mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 1µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 10V,

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DMA502010R

bahagian bahagian: 194193

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V,

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XN0440400L

bahagian bahagian: 4416

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 10V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 8mA, 400mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V,

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XN0553100L

bahagian bahagian: 4467

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 10V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 4mA, 20mA, Semasa - Potongan Pemungut (Maksimum): 10µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 75 @ 5mA, 4V,

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XP0C30100L

bahagian bahagian: 4375

Jenis Transistor: NPN, PNP Complementary Darlington, Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA, Semasa - Potongan Pemungut (Maksimum): 100µA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V,

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Sanken

STA472A

bahagian bahagian: 23793

Jenis Transistor: 4 PNP Darlington (Quad), Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1.5V @ 2mA, 1A, Semasa - Potongan Pemungut (Maksimum): 10µA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 4V,

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SN75469NG4

bahagian bahagian: 123639

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA,

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SN75469DE4

bahagian bahagian: 118043

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA,

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ULN2004ADRG4

bahagian bahagian: 153464

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

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ULN2002ANE4

bahagian bahagian: 62618

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Semasa - Potongan Pemungut (Maksimum): 50µA,

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TT Electronics/Optek Technology

SN75469DR

bahagian bahagian: 192408

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 100V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA,

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HCT700TX

bahagian bahagian: 2560

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 800mA, 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V,

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Nexperia USA Inc.

PEMX1,115

bahagian bahagian: 188298

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 100mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 200mV @ 5mA, 50mA, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V,

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Nexperia USA Inc.

PBSS4230PAN,115

bahagian bahagian: 193350

Semasa - Pemungut (Ic) (Maks): 2A, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 290mV @ 200mA, 2A, Semasa - Potongan Pemungut (Maksimum): 100nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V,

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Nexperia USA Inc.

PBSS5350SS,115

bahagian bahagian: 144519

Jenis Transistor: 2 PNP (Dual), Semasa - Pemungut (Ic) (Maks): 2.7A, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 370mV @ 270mA, 2.7A, Semasa - Potongan Pemungut (Maksimum): 100nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V,

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Central Semiconductor Corp

MPQ2222

bahagian bahagian: 15005

Jenis Transistor: 4 NPN (Quad), Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 30mA, 300mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Central Semiconductor Corp

CMKT5088 TR

bahagian bahagian: 161458

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 50mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 30V, Ketepuan Vce (Maks) @ Ib, Ic: 500mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V,

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Central Semiconductor Corp

MPQ3906

bahagian bahagian: 15049

Jenis Transistor: 4 PNP (Quad), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 1V,

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Diodes Incorporated

DMB2227A-7

bahagian bahagian: 199611

Jenis Transistor: NPN, PNP, Semasa - Pemungut (Ic) (Maks): 600mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, 60V, Ketepuan Vce (Maks) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA, Semasa - Potongan Pemungut (Maksimum): 10nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V,

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Diodes Incorporated

ZDT1048TC

bahagian bahagian: 4409

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 5A, Voltan - Pemecahan Pemancar Pemungut (Maks): 17.5V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 50mA, 5A, Semasa - Potongan Pemungut (Maksimum): 10nA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V,

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SNST3904DXV6T5G

bahagian bahagian: 106304

Jenis Transistor: 2 NPN (Dual), Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 300mV @ 5mA, 50mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V,

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MC1413BDR2G

bahagian bahagian: 196431

Jenis Transistor: 7 NPN Darlington, Semasa - Pemungut (Ic) (Maks): 500mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 50V, Ketepuan Vce (Maks) @ Ib, Ic: 1.6V @ 500µA, 350mA, Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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MMPQ6700

bahagian bahagian: 81112

Jenis Transistor: 2 NPN, 2 PNP, Semasa - Pemungut (Ic) (Maks): 200mA, Voltan - Pemecahan Pemancar Pemungut (Maks): 40V, Ketepuan Vce (Maks) @ Ib, Ic: 250mV @ 1mA, 10mA, Semasa - Potongan Pemungut (Maksimum): 50nA (ICBO), Keuntungan Semasa DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V,

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