Transistor - FET, MOSFET - Susunan

CWDM305ND TR13

bahagian bahagian: 155758

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.8A, Rds On (Maks) @ Id, Vgs: 30 mOhm @ 2.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

CMLDM7003G TR

bahagian bahagian: 145265

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

CMLDM7002AG TR

bahagian bahagian: 187169

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 280mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

NTMD6P02R2G

bahagian bahagian: 192373

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.8A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

FDMC8097AC

bahagian bahagian: 84069

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.4A (Ta), 900mA (Tc), Rds On (Maks) @ Id, Vgs: 155 mOhm @ 2.4A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

NTHD4508NT1G

bahagian bahagian: 175416

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

FDC6401N

bahagian bahagian: 146944

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

FW389-TL-2W

bahagian bahagian: 183608

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 4V Drive, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, Rds On (Maks) @ Id, Vgs: 225 mOhm @ 2A, 10V,

FDS6986AS_SN00192

bahagian bahagian: 3010

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.5A, 7.9A, Rds On (Maks) @ Id, Vgs: 29 mOhm @ 6.5A, 10V, 20 mOhm @ 7.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA, 3V @ 1mA,

FDC6420C

bahagian bahagian: 172122

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A, 2.2A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

DMN601VK-7

bahagian bahagian: 199583

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 305mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

DMC2041UFDB-13

bahagian bahagian: 176346

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, 3.2A, Rds On (Maks) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

DMN5L06DMKQ-7

bahagian bahagian: 127512

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 50V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 305mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

DMTH4007SPDQ-13

bahagian bahagian: 125165

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14.2A, Rds On (Maks) @ Id, Vgs: 8.6 mOhm @ 17A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

DMC25D0UVT-13

bahagian bahagian: 177257

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 25V, 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 400mA, 3.2A, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

TSM680P06DPQ56 RLG

bahagian bahagian: 16540

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A (Tc), Rds On (Maks) @ Id, Vgs: 68 mOhm @ 6A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

TSM4936DCS RLG

bahagian bahagian: 10837

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.9A (Ta), Rds On (Maks) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

FMM65-015P

bahagian bahagian: 2720

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 65A, Rds On (Maks) @ Id, Vgs: 22 mOhm @ 50A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

LKK47-06C5

bahagian bahagian: 2067

Jenis FET: 2 N-Channel (Dual), Ciri FET: Super Junction, Saliran ke Voltan Sumber (Vdss): 600V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 47A, Rds On (Maks) @ Id, Vgs: 45 mOhm @ 44A, 10V, Vgs (th) (Maks) @ Id: 3.9V @ 3mA,

GWM120-0075P3-SMD SAM

bahagian bahagian: 2286

Jenis FET: 6 N-Channel (3-Phase Bridge), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 75V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 118A, Rds On (Maks) @ Id, Vgs: 5.5 mOhm @ 60A, 10V, Vgs (th) (Maks) @ Id: 4V @ 1mA,

MCQ4559-TP

bahagian bahagian: 163911

Jenis FET: N and P-Channel, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A, 3.5A, Rds On (Maks) @ Id, Vgs: 80 mOhm @ 3.1A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

SM6K2T110

bahagian bahagian: 120997

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 200mA, Rds On (Maks) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

TPS1120D

bahagian bahagian: 27273

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 15V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 1.17A, Rds On (Maks) @ Id, Vgs: 180 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 1.5V @ 250µA,

CSD87384M

bahagian bahagian: 105031

Jenis FET: 2 N-Channel (Half Bridge), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 30A, Rds On (Maks) @ Id, Vgs: 7.7 mOhm @ 25A, 8V, Vgs (th) (Maks) @ Id: 1.9V @ 250µA,

CSD83325LT

bahagian bahagian: 151301

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Vgs (th) (Maks) @ Id: 1.25V @ 250µA,

CSD87355Q5D

bahagian bahagian: 70450

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Vgs (th) (Maks) @ Id: 1.9V @ 250µA,

SQ3987EV-T1_GE3

bahagian bahagian: 16233

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3A (Tc), Rds On (Maks) @ Id, Vgs: 133 mOhm @ 1.5A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

SI5915DC-T1-E3

bahagian bahagian: 2988

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.4A, Rds On (Maks) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V, Vgs (th) (Maks) @ Id: 450mV @ 250µA (Min),

SI3585DV-T1-GE3

bahagian bahagian: 3014

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2A, 1.5A, Rds On (Maks) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Maks) @ Id: 600mV @ 250µA (Min),

SI7956DP-T1-E3

bahagian bahagian: 43929

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 150V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.6A, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 4.1A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

SI3552DV-T1-GE3

bahagian bahagian: 189573

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

SQJ956EP-T1_GE3

bahagian bahagian: 9990

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 23A (Tc), Rds On (Maks) @ Id, Vgs: 26.7 mOhm @ 5.2A, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 250µA,

STL15DN4F5

bahagian bahagian: 56764

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 60A, Rds On (Maks) @ Id, Vgs: 9 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

SSM6N42FE(TE85L,F)

bahagian bahagian: 2976

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA, Rds On (Maks) @ Id, Vgs: 240 mOhm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

PMDXB950UPELZ

bahagian bahagian: 106171

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 500mA, Rds On (Maks) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V, Vgs (th) (Maks) @ Id: 950mV @ 250µA,

UPA1764G(0)-E1-AZ

bahagian bahagian: 3007