Transistor - FET, MOSFET - Susunan

FDMC9430L-F085

FDMC9430L-F085

bahagian bahagian: 211

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 12A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 12A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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NVMFD5C466NLT1G

NVMFD5C466NLT1G

bahagian bahagian: 9983

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 14A (Ta), 52A (Tc), Rds On (Maks) @ Id, Vgs: 7.4 mOhm @ 10A, 10V, Vgs (th) (Maks) @ Id: 2.2V @ 30µA,

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FDS8958A

FDS8958A

bahagian bahagian: 10836

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, 5A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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FDD8424H

FDD8424H

bahagian bahagian: 181368

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 9A, 6.5A, Rds On (Maks) @ Id, Vgs: 24 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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EFC4630R-TR

EFC4630R-TR

bahagian bahagian: 3001

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 24V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6A (Ta), Rds On (Maks) @ Id, Vgs: 45 mOhm @ 3A, 4.5V, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

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FDMS3606AS

FDMS3606AS

bahagian bahagian: 63299

Jenis FET: 2 N-Channel (Dual) Asymmetrical, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 13A, 27A, Rds On (Maks) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Maks) @ Id: 2.7V @ 250µA,

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FDS6982AS_G

FDS6982AS_G

bahagian bahagian: 2936

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.3A, 8.6A, Rds On (Maks) @ Id, Vgs: 28 mOhm @ 6.3A, 10V, 13.5 mOhm @ 8.6A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA, 3V @ 1mA,

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ECH8651R-R-TL-HX

ECH8651R-R-TL-HX

bahagian bahagian: 2970

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FDZ1416NZ

FDZ1416NZ

bahagian bahagian: 131465

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Vgs (th) (Maks) @ Id: 1.3V @ 250µA,

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NVMFD5875NLWFT1G

NVMFD5875NLWFT1G

bahagian bahagian: 147994

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7A, Rds On (Maks) @ Id, Vgs: 33 mOhm @ 7.5A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SSM6L13TU(T5L,F,T)

SSM6L13TU(T5L,F,T)

bahagian bahagian: 2912

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, 1.8V Drive, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 800mA (Ta), Rds On (Maks) @ Id, Vgs: 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V, Vgs (th) (Maks) @ Id: 1V @ 1mA,

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SSM6N48FU,RF(D

SSM6N48FU,RF(D

bahagian bahagian: 2967

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, 2.5V Drive, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 100mA (Ta), Rds On (Maks) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Maks) @ Id: 1.5V @ 100µA,

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IRF7380QTRPBF

IRF7380QTRPBF

bahagian bahagian: 2971

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 80V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, Rds On (Maks) @ Id, Vgs: 73 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 4V @ 250µA,

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IRF7341QTRPBF

IRF7341QTRPBF

bahagian bahagian: 2975

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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IRF5810TRPBF

IRF5810TRPBF

bahagian bahagian: 3074

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 2.9A, Rds On (Maks) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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IRF7904PBF

IRF7904PBF

bahagian bahagian: 75561

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.6A, 11A, Rds On (Maks) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V, Vgs (th) (Maks) @ Id: 2.25V @ 25µA,

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IRF7343TRPBF

IRF7343TRPBF

bahagian bahagian: 191306

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 55V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.7A, 3.4A, Rds On (Maks) @ Id, Vgs: 50 mOhm @ 4.7A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMN1003UCA6-7

DMN1003UCA6-7

bahagian bahagian: 9998

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Vgs (th) (Maks) @ Id: 1.3V @ 1mA,

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DMN63D1LDW-13

DMN63D1LDW-13

bahagian bahagian: 120600

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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DMT3020LFDB-7

DMT3020LFDB-7

bahagian bahagian: 173648

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 30V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.7A, Rds On (Maks) @ Id, Vgs: 20 mOhm @ 9A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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ZXMC4559DN8TC

ZXMC4559DN8TC

bahagian bahagian: 98680

Jenis FET: N and P-Channel, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 3.6A, 2.6A, Rds On (Maks) @ Id, Vgs: 55 mOhm @ 4.5A, 10V, Vgs (th) (Maks) @ Id: 1V @ 250µA (Min),

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DMN2028UFU-13

DMN2028UFU-13

bahagian bahagian: 184757

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 7.5A, Rds On (Maks) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMG8601UFG-7

DMG8601UFG-7

bahagian bahagian: 139933

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 6.1A, Rds On (Maks) @ Id, Vgs: 23 mOhm @ 6.5A, 4.5V, Vgs (th) (Maks) @ Id: 1.05V @ 250µA,

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DMC1030UFDBQ-7

DMC1030UFDBQ-7

bahagian bahagian: 120462

Jenis FET: N and P-Channel Complementary, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.1A, Rds On (Maks) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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DMP2200UDW-13

DMP2200UDW-13

bahagian bahagian: 108457

Jenis FET: 2 P-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 900mA, Rds On (Maks) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V, Vgs (th) (Maks) @ Id: 1.2V @ 250µA,

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DMN63D1LDW-7

DMN63D1LDW-7

bahagian bahagian: 176531

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 250mA, Rds On (Maks) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Maks) @ Id: 2.5V @ 1mA,

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CSD83325L

CSD83325L

bahagian bahagian: 156131

Jenis FET: 2 N-Channel (Dual) Common Drain, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 12V, Vgs (th) (Maks) @ Id: 1.25V @ 250µA,

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VMM300-03F

VMM300-03F

bahagian bahagian: 404

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 300V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 290A, Rds On (Maks) @ Id, Vgs: 8.6 mOhm @ 145A, 10V, Vgs (th) (Maks) @ Id: 4V @ 30mA,

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VMM650-01F

VMM650-01F

bahagian bahagian: 405

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 100V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 680A, Rds On (Maks) @ Id, Vgs: 2.2 mOhm @ 500A, 10V, Vgs (th) (Maks) @ Id: 4V @ 30mA,

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UPA1764G-E1-A

UPA1764G-E1-A

bahagian bahagian: 2982

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SI1905BDH-T1-E3

SI1905BDH-T1-E3

bahagian bahagian: 3022

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 8V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 630mA, Rds On (Maks) @ Id, Vgs: 542 mOhm @ 580mA, 4.5V, Vgs (th) (Maks) @ Id: 1V @ 250µA,

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SI4904DY-T1-GE3

SI4904DY-T1-GE3

bahagian bahagian: 68499

Jenis FET: 2 N-Channel (Dual), Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 40V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 8A, Rds On (Maks) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Maks) @ Id: 2V @ 250µA,

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SI4900DY-T1-GE3

SI4900DY-T1-GE3

bahagian bahagian: 132105

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 60V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 5.3A, Rds On (Maks) @ Id, Vgs: 58 mOhm @ 4.3A, 10V, Vgs (th) (Maks) @ Id: 3V @ 250µA,

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SIA907EDJT-T1-GE3

SIA907EDJT-T1-GE3

bahagian bahagian: 150001

Jenis FET: 2 P-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 20V, Semasa - Saliran Berterusan (Id) @ 25 ° C: 4.5A (Tc), Rds On (Maks) @ Id, Vgs: 57 mOhm @ 3.6A, 4.5V, Vgs (th) (Maks) @ Id: 1.4V @ 250µA,

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TC6215TG-G

TC6215TG-G

bahagian bahagian: 66450

Jenis FET: N and P-Channel, Ciri FET: Standard, Saliran ke Voltan Sumber (Vdss): 150V, Rds On (Maks) @ Id, Vgs: 4 Ohm @ 2A, 10V, Vgs (th) (Maks) @ Id: 2V @ 1mA,

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PHN210,118

PHN210,118

bahagian bahagian: 3099

Jenis FET: 2 N-Channel (Dual), Ciri FET: Logic Level Gate, Saliran ke Voltan Sumber (Vdss): 30V, Rds On (Maks) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Maks) @ Id: 2.8V @ 1mA,

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